scholarly journals Influence of a Thermal Pad on Selected Parameters of Power LEDs

Energies ◽  
2020 ◽  
Vol 13 (14) ◽  
pp. 3732
Author(s):  
Krzysztof Górecki ◽  
Przemysław Ptak ◽  
Tomasz Torzewicz ◽  
Marcin Janicki
Keyword(s):  
Optical Properties ◽  
Thermal Resistance ◽  
Optical Power ◽  
Junction Temperature ◽  
Operating Parameters ◽  
Cold Plate ◽  
Optical Efficiency ◽  
Forward Current ◽  
Measurement Results ◽  
Set Up

This paper is devoted to the analysis of the influence of thermal pads on electric, optical, and thermal parameters of power LEDs. Measurements of parameters, such as thermal resistance, optical efficiency, and optical power, were performed for selected types of power LEDs operating with a thermal pad and without it at different values of the diode forward current and temperature of the cold plate. First, the measurement set-up used in the paper is described in detail. Then, the measurement results obtained for both considered manners of power LED assembly are compared. Some characteristics that illustrate the influence of forward current and temperature of the cold plate on electric, thermal, and optical properties of the tested devices are presented and discussed. It is shown that the use of the thermal pad makes it possible to achieve more advantageous values of operating parameters of the considered semiconductor devices at lower values of their junction temperature, which guarantees an increase in their lifetime.

Design of a Cold Plate Tester for Accurate Measurement of Thermal Performance

2005 ◽  
Author(s):  
Nikhil Lakhkar ◽  
Madhusudan Iyengar ◽  
Michael Ellsworth ◽  
Dereje Agonafer
Keyword(s):  
Thermal Resistance ◽  
Thermal Performance ◽  
High Performance ◽  
Heat Dissipation ◽  
Thermal Design ◽  
Junction Temperature ◽  
Cold Plate ◽  
Expected Performance ◽  
Cold Plates ◽  
Effective Heat Transfer Coefficient

With the continuing industry trends towards smaller, faster and higher power devices, thermal management has become an extremely important element in the development of computer products. The primary goal of a good thermal design is to ensure that the chip can function at its rated frequency, while maintaining its junction temperature below the specified limit, to ensure reliable operation. The use of a heat sink or cold plate to manage the external thermal resistance has been well documented in the literature. However, the measurement of thermal performance of today state-of-the-art cold plates is challenging because of the low value of thermal resistance that they offer to heat dissipation. In this paper, the design of a tester apparatus for such high performance cold plates is presented. The expected performance of the tester is modeled numerically for a heat flux of 250 W/cm2, and for a range of footprint areas of 100-400 mm2. The analysis study is supported by a detailed uncertainty analysis that utilizes a Monte Carlo simulation approach. It was observed that the sum of random and repeatable errors could be controlled to within ±7.5% even for a very high performance cold plate with an effective heat transfer coefficient of 200,000 W/m2-K dissipating 250 W/cm2, with assumed errors in other relevant parameters.

scholarly journals Comparison of Properties for Selected Experimental Set-Ups Dedicated to Measuring Thermal Parameters of Power LEDs

Energies ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3240
Author(s):  
Krzysztof Górecki ◽  
Przemysław Ptak ◽  
Marcin Janicki ◽  
Małgorzata Napieralska
Keyword(s):  
Optical Power ◽  
Measurement Procedure ◽  
Thermal Parameters ◽  
Measurement Results ◽  
Set Up ◽  
Transient Thermal

This article compares properties of two measurement set-ups dedicated to determining thermal parameters of power LEDs. The standard T3Ster set-up and the custom set-up developed in Gdynia Maritime University are considered. Both set-ups are described and the used measurement procedure is presented. The manner of measurement of optical power of the tested LEDs is also described. The method of measuring transfer transient thermal impedances between thermally coupled power LEDs using both set-ups is proposed. The measurement results of the mentioned parameters obtained with these set-ups for selected power LEDs are compared and discussed. Certain properties of software operating with both the considered measuring set-ups are also analyzed.

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

scholarly journals LED Rail Signals: Full Hardware Realization of Apparatus with Independent Intensity by Temperature Changes

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1291
Author(s):  
Giuseppe Schirripa Schirripa Spagnolo ◽  
Fabio Leccese
Keyword(s):  
Temperature Sensor ◽  
Energy Efficient ◽  
Light Emitting Diode ◽  
Junction Temperature ◽  
Light Emitting ◽  
Temperature Changes ◽  
Wide Range ◽  
International Regulations ◽  
Long Lifetime ◽  
Set Up

Nowadays, signal lights are made using light-emitting diode arrays (LEDs). These devices are extremely energy efficient and have a very long lifetime. Unfortunately, especially for yellow/amber LEDs, the intensity of the light is closely related to the junction temperature. This makes it difficult to design signal lights to be used in naval, road, railway, and aeronautical sectors, capable of fully respecting national and international regulations. Furthermore, the limitations prescribed by the standards must be respected in a wide range of temperature variations. In other words, in the signaling apparatuses, a system that varies the light intensity emitted according to the operating temperature is useful/necessary. In this paper, we propose a simple and effective solution. In order to adjust the intensity of the light emitted by the LEDs, we use an LED identical to those used to emit light as a temperature sensor. The proposed system was created and tested in the laboratory. As the same device as the ones to be controlled is used as the temperature sensor, the system is very stable and easy to set up.

Reduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure

2015 ◽  
Vol 62 (11) ◽  
pp. 6925-6933 ◽  
Author(s):  
Huan Ting Chen ◽  
Yuk Fai Cheung ◽  
Hoi Wai Choi ◽  
Siew Chong Tan ◽  
S. Y. Hui
Keyword(s):  
Thin Film ◽  
Thermal Resistance ◽  
Power Loss ◽  
Light Emitting Diode ◽  
Optical Power ◽  
Light Emitting

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

Heat Transfer and Flow Friction Characteristics for Compact Cold Plates

2003 ◽  
Vol 125 (1) ◽  
pp. 104-113 ◽  
Author(s):  
Chang-Yuan Liu ◽  
Ying-Huei Hung
Keyword(s):  
Heat Transfer ◽  
Heat Flux ◽  
Nusselt Number ◽  
Thermal Resistance ◽  
Mass Flow Rate ◽  
Mass Flow ◽  
Flow Rate ◽  
Average Nusselt Number ◽  
Cold Plate ◽  
Air Mass

Both experimental and theoretical investigations on the heat transfer and flow friction characteristics of compact cold plates have been performed. From the results, the local and average temperature rises on the cold plate surface increase with increasing chip heat flux or decreasing air mass flow rate. Besides, the effect of chip heat flux on the thermal resistance of cold plate is insignificant; while the thermal resistance of cold plate decreases with increasing air mass flow rate. Three empirical correlations of thermal resistance in terms of air mass flow rate with a power of −0.228 are presented. As for average Nusselt number, the effect of chip heat flux on the average Nusselt number is insignificant; while the average Nusselt number of the cold plate increases with increasing Reynolds number. An empirical relationship between Nu¯cp and Re can be correlated. In the flow frictional aspect, the overall pressure drop of the cold plate increases with increasing air mass flow rate; while it is insignificantly affected by chip heat flux. An empirical correlation of the overall pressure drop in terms of air mass flow rate with a power of 1.265 is presented. Finally, both heat transfer performance factor “j” and pumping power factor “f” decrease with increasing Reynolds number in a power of 0.805; while they are independent of chip heat flux. The Colburn analogy can be adequately employed in the study.

Approximate Analytical Model for a First Level Package With Non-Uniformly Powered Die

2006 ◽  
Author(s):  
Abhijit Kaisare ◽  
Dereje Agonafer ◽  
A. Haji-Sheikh ◽  
Greg Chrysler ◽  
Ravi Mahajan
Keyword(s):  
Thermal Resistance ◽  
Analytical Model ◽  
Functional Integration ◽  
Thermal Design ◽  
Junction Temperature ◽  
Direct Result ◽  
Design Guideline ◽  
Functional Blocks ◽  
Distribution Of Power ◽  
Functional Components

Microprocessors continue to grow in capabilities, complexity and performance. Microprocessors typically integrate functional components such as logic and level two (L2) cache memory in their architecture. This functional integration of logic and memory results in improved performance of the microprocessor as the clock speed increases and the instruction execution time has decreased. However, the integration also introduces a layer of complexity to the thermal design and management of microprocessors. As a direct result of function integration, the power map on a microprocessor is typically highly non-uniform and the assumption of a uniform heat flux across the chip surface is not valid. The active side of the die is divided into several functional blocks with distinct power assigned to each functional block. Previous work [1,2] has been done to minimize the thermal resistance of the package by optimizing the distribution of the non-uniform powered functional blocks with different power matrices. This study further gives design guideline and key pointers to minimized thermal resistance for any number of functional blocks for a given non-uniformly powered microprocessor. In this paper, initially (Part I) temperature distribution of a typical package consisting of a uniformly powered die, heat spreader, TIM 1 & 2 and the base of the heat sink is calculated using an approximate analytical model. The results are then compared with a detailed numerical model and the agreement is within 5%. This study follows (Part II) with a thermal investigation of non-uniform powered functional blocks with a different power matrices with focus on distribution of power over die surface with an application of maximum, minimum and average uniform junction temperature over a given die area. This will help to predict the trend of the calculated distribution of power that will lead to the least thermal gradient over a given die area. This trend will further help to come up with design correlations for minimizing thermal resistance for any number of functional blocks for a given non-uniformly powered microprocessor numerically as well as analytically. The commercial finite element code ANSYS® is used for this analysis as a numerical tool.

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