Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiN x intermediate layer

Abstract Thermal silver plating method by means of nanosilver-based paint could be an alternative to electrochemical processes. Electrochemical silver layering on aluminium is typically achieved with an intermediate layer, which provides very good adhesion of the layer to the aluminium surface but increases the resistance of the whole junction system. In the method of silver plating promoted by the authors, the intermediate layer is eliminated. The layer of silver paint was applied directly on the aluminium surface by spraying using aerograph. Procured silver layers, according to ISO 2409, prove proper adhesion to aluminium. The value of contact resistance with a pressure of 300 N cm−2 and current load of 200 A is 0.03 μΩ mm−2, which is comparable to the contact resistance of layers generated by electrochemical means. This new method decreases the level of toxic waste emission and therefore is less harmful for the natural environment. It is also cheaper and simpler than the electrochemical process. An additional advantage is the possibility of silver plating of the chosen surfaces with various shapes.

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Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.05fl03 ◽

2016 ◽

Vol 55 (5S) ◽

pp. 05FL03 ◽

Cited By ~ 12

Author(s):

Kazuki Mori ◽

Kunihiro Takeda ◽

Toshiki Kusafuka ◽

Motoaki Iwaya ◽

Tetsuya Takeuchi ◽

...

Keyword(s):

Contact Resistance ◽

Ohmic Contact ◽

Molar Fraction

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Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126433 ◽

1987 ◽

Vol 45 ◽

pp. 326-327

Author(s):

A.K. Rai ◽

A.K. Petford-Long ◽

A. Ezis ◽

D.W. Langer

Keyword(s):

Contact Resistance ◽

Ohmic Contact ◽

Ohmic Contacts ◽

Microstructural Characterization ◽

Almost Everywhere ◽

Spacer Layer ◽

Good Contact ◽

The Relationship ◽

Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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Microstructure of YBa2Cu3O7-x thin films deposited by dc sputtering

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100152835 ◽

1989 ◽

Vol 47 ◽

pp. 172-173

Author(s):

O. Eibl ◽

G. Gieres ◽

H. Behner

Keyword(s):

Thin Films ◽

Cross Sections ◽

Intermediate Layer ◽

Amorphous State ◽

Critical Currents ◽

Dc Sputtering ◽

State Process ◽

Diffraction Patterns ◽

Film Substrate ◽

Substrate Temperatures

The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voids was approximately 100 nm. Between the SrTiO3 substrate and the YBa2Cu3Ox film a densly grown crystalline intermediate layer approximately 150 nm thick covered the SrTiO3 substrate. EDX microanalyses showed that the layer consisted of Sr, Ba and Ti, however, did not contain Y and Cu. Crystallites of the layer were carefully tilted in the microscope and diffraction patterns were obtained in five different poles for every crystallite. These patterns were consistent with the phase (Ba1-XSrx)2TiO4. The intermediate layer was most likely formed during the annealing at 900°C. Its formation can be understood as a diffusion of Ba from the amorphously deposited film into the substrate and diffusion of Sr from the substrate into the film. Between the intermediate layer and the surface of the film the film consisted of YBa2Cu3O7-x grains. Films prepared in process 1 had Tc(R=0) close to 90 K, however, critical currents were as low as jc = 104A/cm2 at 77 K.

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Tunnel Magnetoresistance Effect for Double Tunnel Junctions with Al Intermediate Layer.

Journal of the Magnetics Society of Japan ◽

10.3379/jmsjmag.25.767 ◽

2001 ◽

Vol 25 (4−2) ◽

pp. 767-770 ◽

Cited By ~ 1

Author(s):

T. Daibou ◽

M. Oogane ◽

Y. Ando ◽

C. Kim ◽

O. Song ◽

...

Keyword(s):

Intermediate Layer ◽

Tunnel Junctions ◽

Magnetoresistance Effect ◽

Tunnel Magnetoresistance

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Degradation Phenomenon of Electrical Contacts by using a Micro-Sliding Mechanism -Modeling about Fluctuation of Contact Resistance-

IEICE Proceeding Series ◽

10.15248/proc.2.6 ◽

2014 ◽

Vol 2 ◽

pp. 6-9

Author(s):

Shin-ichi Wada ◽

Koichiro Sawa

Keyword(s):

Contact Resistance ◽

Electrical Contacts ◽

Sliding Mechanism ◽

Mechanism Modeling

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TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts

MRS Proceedings ◽

10.1557/proc-764-c3.17 ◽

2003 ◽

Vol 764 ◽

Cited By ~ 3

Author(s):

D.N. Zakharov ◽

Z. Liliental-Weber ◽

A. Motayed ◽

S.N. Mohammad

Keyword(s):

Contact Resistance ◽

Ohmic Contacts ◽

High Resolution Electron Microscopy ◽

X Ray ◽

Electron Energy Loss Spectrometry ◽

Resolution Electron ◽

Order Of Magnitude ◽

Contact Surfaces ◽

Electron Energy Loss ◽

Magnitude Difference

AbstractOhmic Ta/Ti/Ni/Au contacts to n-GaN have been studied using high resolution electron microscopy (HREM), energy dispersive X-ray spectrometry (EDX) and electron energy loss spectrometry (EELS). Two different samples were used: A - annealed at 7500C withcontact resistance 5×10-6 Ω cm2 and B-annealed at 7750C with contact resistance 6×10-5 Ω cm2. Both samples revealed extensive in- and out-diffusion between deposited layers with some consumption ofGaNlayerand formation of TixTa1-xN50 (0<x<25) at the GaN interface. Almost an order of magnitude difference in contact resistances can be attributed to structure and chemical bonding of Ti-O layers formed on the contact surfaces.

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