Influence of heavy-hole scattering on the magnetotransport behaviour of p-type zero-gap Hg1-xMnxTe

1993 ◽  
Vol 8 (1S) ◽  
pp. S165-S167 ◽  
Author(s):  
Guozhen Zheng ◽  
Jinxi Shen ◽  
Shaoling Guo ◽  
Dingyuan Tang
Keyword(s):  
Heavy Hole ◽  
P Type

High thermoelectric efficiency in co-doped degenerate p-type PbTe

2010 ◽  
Vol 1267 ◽  
Author(s):  
Ioannis Androulakis ◽  
Ilyia Todorov ◽  
Duck Young Chung ◽  
Sedat Ballikaya ◽  
Guoyu Wang ◽  
...  
Keyword(s):  
Heavy Hole ◽  
Elevated Temperatures ◽  
Resonant State ◽  
Band Model ◽  
Hole Density ◽  
Thermoelectric Efficiency ◽  
Na Substitution ◽  
Valence Bands ◽  
P Type ◽  
Two Band Model

AbstractWe explored the effect of K and K-Na substitution for Pb atoms in the lattice of PbTe, in an effort to test a hypothesis for the development of a resonant state that may enhance the thermoelectric power. At 300K the data can adequately be explained by a combination of a single and two-band model for the valence band of PbTe depending on hole density that varies in the range 1-15 × 1019 cm-3. A change in scattering mechanism was observed in the temperature dependence of the electrical conductivity, σ, for samples concurrently doped with K and Na which results in significantly enhanced σ at elevated temperatures and hence power factors. Thermal conductivity data provide evidence of a strong interaction between the light- and the heavy-hole valence bands at least up to 500K. Figure of merits as high as 1.3 at 700K were measured as a result of the enhanced power factors.

Probe of the Band Structure of MBE Grown p-Type InMnAs at Ultrahigh Magnetic Fields

SPIN ◽  
2015 ◽  
Vol 05 (01) ◽  
pp. 1550002 ◽  
Author(s):  
Y. Sun ◽  
F. V. Kyrychenko ◽  
G. D. Sanders ◽  
C. J. Stanton ◽  
G. A. Khodaparast ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetic Fields ◽  
Band Structure ◽  
Heavy Hole ◽  
Theoretical Calculations ◽  
Interaction Strength ◽  
Golden Rule ◽  
Exchange Interactions ◽  
Landau Levels ◽  
P Type

We present a theoretical and experimental study on electronic and magneto-optical properties of p-type paramagnetic InMnAs dilute magnetic semiconductor (DMS) alloys in ultrahigh (> 100 T) external magnetic fields (B). Theoretical calculations are based on an 8-band Pidgeon–Brown model which is generalized to include the wavevector dependence of the electronic states along B as well as s–d and p–d exchange interactions with localized Mn d-electrons. The spin-dependent electronic structure as a function of Mn doping is computed and the dependence of the valence band structure on parameters such as the sp–d exchange interaction strength and effective masses in paramagnetic p- InMnAs alloys are examined. The cyclotron resonance (CR) and magneto-optical properties of InMnAs are calculated using Fermi's golden rule. Two strong CR peaks are observed in p-type InMnAs alloys which correspond to the transitions within either heavy-hole (HH) or light-hole (LH) Landau levels. Furthermore, we also observed strong resonance absorption for electron-active polarization which can occur in p-type semiconductors originating from transitions between the light and heavy hole Landau levels.

An enhanced Seebeck coefficient and high thermoelectric performance in p-type In and Mg co-doped Sn1−xPbxTe via the co-adjuvant effect of the resonance level and heavy hole valence band

2017 ◽  
Vol 5 (23) ◽  
pp. 5737-5748 ◽  
Author(s):  
Subhajit Roychowdhury ◽  
U. Sandhya Shenoy ◽  
Umesh V. Waghmare ◽  
Kanishka Biswas
Keyword(s):  
Synergistic Effect ◽  
Seebeck Coefficient ◽  
Valence Band ◽  
Heavy Hole ◽  
Resonance Level ◽  
Thermoelectric Performance ◽  
Adjuvant Effect ◽  
P Type ◽  
Co Doped

Remarkable enhancement of the Seebeck coefficient of an Sn rich Sn1−xPbxTe system due to the synergistic effect of resonance level formation and valence band convergence.

Inter-Sub-Level Spectroscopy of P-Type Modulation-Doped Ge Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
J. L. Liu ◽  
W. G. Wu ◽  
G. Jin ◽  
Y. H. Luo ◽  
S. G. Thomas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Molecular Beam ◽  
Heavy Hole ◽  
Infrared Detector ◽  
Infrared Range ◽  
Mid Infrared ◽  
Boron Doped ◽  
Ge Quantum Dots ◽  
P Type

ABSTRACTInter-sub-level transitions in p-type modulation-doped Ge quantum dots are observed. The structure is grown by molecular beam epitaxy and consists of 30 periods of Ge quantum dots separated by 6 nm boron-doped Si layers. An absorption peak in the mid-infrared range is observed at room temperature by Fourier transform infrared spectroscopy, and is attributed to the transition between the first two heavy hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector application.

Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass

2007 ◽  
Vol 91 (1) ◽  
pp. 012104 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Maiko Kikuchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Effective Mass ◽  
Heavy Hole ◽  
Hole Doping ◽  
Epitaxial Thin Films ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type

Valence band engineering and thermoelectric performance optimization in SnTe by Mn-alloying via a zone-melting method

2015 ◽  
Vol 3 (39) ◽  
pp. 19974-19979 ◽  
Author(s):  
Jun He ◽  
Xiaojian Tan ◽  
Jingtao Xu ◽  
Guo-Qiang Liu ◽  
Hezhu Shao ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Band Gap ◽  
Performance Optimization ◽  
Heavy Hole ◽  
Zone Melting ◽  
Energy Separation ◽  
Melting Method ◽  
Band Engineering ◽  
Valence Bands ◽  
P Type

Mn alloying in SnTe increases the band gap and decreases the energy separation between the light and heavy hole valence bands, leading to a significant enhancement in the Seebeck coefficient. The maximum ZT of ~1.25 is found at 920 K for p-type SnMn0.07Te.

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