P‐6.6: Effects of lightly Doped Drain Structure in n‐channel ELA Bridged‐Grain Poly‐Si TFTs

2019 ◽  
Vol 50 (S1) ◽  
pp. 766-770
Author(s):  
Jian Guo ◽  
Zhinong Yu ◽  
Wei Yan ◽  
Dawei Shi ◽  
Jianshe Xue ◽  
...  
Keyword(s):  
Lightly Doped Drain

Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies

2019 ◽  
Author(s):  
Satish Kodali ◽  
Chen Zhe ◽  
Chong Khiam Oh
Keyword(s):  
Yield Loss ◽  
Performance Metrics ◽  
Root Cause ◽  
Advanced Technologies ◽  
Capacitance Voltage ◽  
Defect Localization ◽  
Cv Measurements ◽  
Lightly Doped Drain ◽  
Dc Characterization

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

A double lightly doped drain (D-LDD) structure H-MESFET for MMIC applications

1997 ◽  
Vol 45 (12) ◽  
pp. 2229-2233 ◽  
Author(s):  
T. Yamane ◽  
K. Onodera ◽  
T. Nittono ◽  
K. Nishimura ◽  
K. Yamasaki ◽  
...  
Keyword(s):  
Lightly Doped Drain
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