TEGAL announces oxide sidewall spacer process for salicides and lightly doped drain FETs
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1989 ◽
Vol 20
(4)
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pp. 19-24
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Keyword(s):
1997 ◽
Vol 45
(12)
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pp. 2229-2233
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2010 ◽
Vol 57
(4)
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pp. 765-771
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1991 ◽
Vol 30
(Part 2, No. 4A)
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pp. L535-L537
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2004 ◽
Vol 43
(3)
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pp. 918-924
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