7‐5: Invited Paper: Bilayer Tunneling Field Effect Transistors using Oxide Semiconductor/Group‐IV Semiconductor Hetero‐structures

2021 ◽  
Vol 52 (1) ◽  
pp. 73-76
Author(s):  
Shinichi Takagi ◽  
Kimihiko Kato ◽  
Mitsuru Takenaka
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Group Iv ◽  
Oxide Semiconductor ◽  
Tunneling Field Effect Transistors ◽  
Group Iv Semiconductor

Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides

Nanoscale ◽  
2019 ◽  
Vol 11 (48) ◽  
pp. 23392-23401 ◽  
Author(s):  
Hong Li ◽  
Peipei Xu ◽  
Jing Lu
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Group Iv ◽  
Two Dimensional ◽  
Tunneling Field Effect Transistors

Optimal band gap and average effective mass of two-dimensional channels for high-performance tunneling transistors.

Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

2013 ◽  
Vol 102 (11) ◽  
pp. 113106 ◽  
Author(s):  
R. Kotlyar ◽  
U. E. Avci ◽  
S. Cea ◽  
R. Rios ◽  
T. D. Linton ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Group Iv ◽  
Bandgap Engineering ◽  
Tunneling Field Effect Transistors
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