34.4: High electrical stability nanocrystalline silicon BCE TFTs for outdoor display application on large glass substrates

2021 ◽  
Vol 52 (S2) ◽  
pp. 458-461
Author(s):  
Jiaying Mai ◽  
Zhixiong Jiang ◽  
Hongyuan Xu ◽  
Maoxia Zhu ◽  
Cong Hu ◽  
...  
Keyword(s):  
Nanocrystalline Silicon ◽  
Electrical Stability ◽  
Glass Substrates ◽  
Large Glass

DEVELOPMENT OF A POROUS CERAMIC-BASED AIR FLOAT PLATFORM FOR LARGE GLASS SUBSTRATES

2011 ◽  
Vol 2 (4) ◽  
pp. 313-321 ◽  
Author(s):  
Yeeu-Chang Lee ◽  
Chin-Chang Yu ◽  
Ruey-Yih Tsai ◽  
Jen-Chung Hsiao ◽  
Ching-Hao Chen ◽  
...  
Keyword(s):  
Porous Ceramic ◽  
Glass Substrates ◽  
Large Glass

MEMS Microresonators Based on Nanocrystalline Silicon

2004 ◽  
Vol 808 ◽  
Author(s):  
J. Gaspar ◽  
T. Adrega ◽  
V. Chu ◽  
J. P. Conde
Keyword(s):  
Energy Dissipation ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Quality Factors ◽  
Electrostatically Actuated ◽  
Glass Substrates ◽  
Boron Doped ◽  
Resonance Frequencies ◽  
Geometrical Dimensions

ABSTRACTThis paper describes the fabrication and characterization of thin-film nanocrystalline silicon microresonators processed at temperatures below 110°C on glass substrates. The microelectromechanical structures consist of surface micromachined bridges of boron-doped hydrogenated nanocrystalline silicon (p+-nc-Si:H) deposited at 100°C by hot-wire chemical vapor deposition (HWCVD). The microbridges, which are suspended over an Al gate electrode, are electrostatically actuated and the mechanical resonance is detected in vacuum using an optical setup. The resonance frequency and energy dissipation in p+-nc-Si:H based resonators are studied as a function of the geometrical dimensions of the microstructures. Resonance frequencies between 700 kHz and 36 MHz and quality factors as high as 2000 are observed. A Young's modulus of 160 GPa for the structural bridge film is extracted from the experimental data using an electromechanical model and the main intrinsic energy dissipation mechanisms in nc-Si:H microresonators are discussed.

Monolithically Integrated p- & n- Channel Thin Film Transistors of Nanocrystalline Silicon on Plastic Substrates

2004 ◽  
Vol 808 ◽  
Author(s):  
I-Chun Cheng ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Structural Evolution ◽  
Nanocrystalline Silicon ◽  
Leakage Currents ◽  
Plastic Substrates ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Electron Field

ABSTRACTInverters made of monolithically integrated p- and n-channel thin film transistors of nanocrystalline silicon were demonstrated on both Corning 1737 glass and Kapton E polyimide substrates. The TFT's geometry is staggered top-gate, bottom-source/rain. A nc-Si:H seed layer promotes the structural evolution of the nc-Si:H channel. Electron field-effect mobilities of 15 - 30 cm2V−1s-1 and hole mobilities of 0.15 - 0.35 cm2V−1s−1 were obtained. Slightly lower carrier mobilities were observed in the TFTs made on polyimide than on glass substrates. High gate leakage currents and offsets between the supply HIGH voltages and the output voltages in the inverters indicate that the low-temperature gate dielectric needs improvement.

scholarly journals Direct growth of 2D and 3D graphene nano-structures over large glass substrates by tuning a sacrificial Cu-template layer

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025088 ◽  
Author(s):  
Miriam Marchena ◽  
Zhen Song ◽  
Wageesha Senaratne ◽  
Connie Li ◽  
Xinyuan Liu ◽  
...  
Keyword(s):  
3D Graphene ◽  
Glass Substrates ◽  
Large Glass ◽  
Nano Structures ◽  
Direct Growth ◽  
2D And 3D

Crystallized silicon nanostructures — experimental characterization and atomistic simulations

2014 ◽  
Vol 92 (7/8) ◽  
pp. 783-788 ◽  
Author(s):  
Solomon Agbo ◽  
Pavol Sutta ◽  
Pavel Calta ◽  
Rana Biswas ◽  
Bicai Pan
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Atomistic Simulations ◽  
Glass Substrates ◽  
Infrared Measurements ◽  
Nanocrystalline Structures ◽  
Silicon Structures

We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100 °C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon (nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated amorphous silicon and silicon oxide (SiO2) were deposited by plasma enhanced chemical vapor deposition on crystalline silicon and Corning glass substrates. The crystallized structure consisting of nc-Si structures embedded in an amorphous matrix were further characterized through XRD, Raman spectroscopy, and Fourier transform infrared measurements. We are able to show the different stages of nanostructure formation and how the sizes and the crystallized mass fraction can be controlled in our experimental synthesis. The crystallized silicon structures with large crystalline filling fractions exceeding 50% have been simulated with a robust classical molecular dynamics technique. The crystalline filling fractions and structural order of nc-Si obtained from this simulation are compared with our Raman and XRD measurements.

Optimization of low-temperature poly-Si TFT-LCDs and a large-scale production line for large glass substrates

2001 ◽  
Vol 9 (3) ◽  
pp. 173-180 ◽  
Author(s):  
Kiyoshi Yoneda ◽  
Hidenori Ogata ◽  
Shinji Yuda ◽  
Kohji Suzuki ◽  
Toshifumi Yamaji ◽  
...  
Keyword(s):  
Low Temperature ◽  
Production Line ◽  
Large Scale ◽  
Scale Production ◽  
Glass Substrates ◽  
Large Glass ◽  
Large Scale Production

Influence of Argon Flow on Deposition of Hydrogenated Nanocrystalline Silicon (nc-Si:H) Films by Plasma Chemical Vapor Deposition

2009 ◽  
Vol 5 ◽  
pp. 185-191 ◽  
Author(s):  
A.M. Funde ◽  
N.A. Bakr ◽  
T.S. Salve ◽  
K.D. Diwate ◽  
D.K. Kamble ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Dark Conductivity ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Glass Substrates

In this work we report synthesis and characterization of hydrogenated nanocrystalline silicon (nc-Si:H) thin films by plasma chemical vapor deposition (P-CVD) method at 200 0C on glass substrates. Film properties are carefully and systematically investigated as a function of argon (Ar) flow rate. Characterization of these films with Raman spectroscopy revealed that the addition of Ar into SiH4-H2 plasma endorses the growth of crystallinity in the films. The Fourier transform infrared (FTIR) spectroscopic analysis showed that with increasing Ar flow rate the hydrogen bonding in the films shifts from mono-hydride (Si-H) to di-hydride (Si-H2) and (Si-H2)n complexes. The hydrogen content in the films was found < 7 at. % over the entire range of studied Ar flow rate. The band gap of nc-Si:H films was found to be higher than hydrogenated amorphous silicon (a-Si:H) films (> 2 eV). The nc-Si:H films with dark conductivity 1.3x10-7 S/cm having deposition rate as high as 2.5 Å/s and of crystalline fraction 98 % have been obtained.

Crystalline and Structural Properties Dependence on RF Power and Deposition Temperature of Sputtered Nanocrystalline Silicon Thin Films on Teflon and Glass Substrates

2012 ◽  
Vol 576 ◽  
pp. 475-479
Author(s):  
Norhidayatul Hikmee Mahzan ◽  
Shaiful Bakhtiar Hashim ◽  
Sukreen Hana Herman ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Structural Properties ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Silicon ◽  
Rf Power ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Scanning Electron

Nanocrystalline silicon (nc-Si) thin films were deposited on glass and polytetrafluoroethylene (PTFE, teflon) substrates using Radio frequency (RF) magnetron sputtering. The effect of RF power and deposition temperature on the physical and structural properties of nc-Si on the glass and Teflon substrate was studied. The thin films properties were examined by Raman spectroscopy and field emission scanning electron microscopy (FESEM). We found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results it showed that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and Teflon substrate.

MICROSTRUCTURAL PROPERTIES OF NC-Si/SiO2 FILMS IN SITU GROWN BY REACTIVE MAGNETRON CO-SPUTTERING

2012 ◽  
Vol 11 (06) ◽  
pp. 1240035
Author(s):  
WANBING LU ◽  
SHAOGANG GUO ◽  
JIANTAO WANG ◽  
YUN LI ◽  
XINZHAN WANG ◽  
...  
Keyword(s):  
Deposition Rate ◽  
Silicon Oxide ◽  
Low Cost ◽  
Nanocrystalline Silicon ◽  
Reactive Magnetron ◽  
Microstructural Properties ◽  
Hydrogen Atoms ◽  
Glass Substrates ◽  
Average Size

Nanocrystalline silicon embedded in silicon oxide (nc- Si/SiO2 ) films have been in situ grown at a low substrate temperature of 300°C by reactive magnetron co-sputtering of Si and SiO2 targets in a mixed Ar/H2 discharge. The influences of H2 flow rate (F H ) on the microstructural properties of the deposited nc- Si/SiO2 films were investigated. The results of XRD and the deposition rate of nc- Si/SiO2 films show that the introduction of H2 contributes to the growth of nc- Si grains in silicon oxide matrix. With further increasing F H , the average size of nc- Si grains increases and the deposition rate of nc- Si/SiO2 films decreases gradually. Fourier transform infrared spectra analyses reveal that introduction of hydrogen contributes to the phase separation of nc- Si and SiO x in the deposited films. Moreover, the Si–O 4-n Si n(n = 0, 1) concentration of the deposited nc- Si/SiO2 films reduces with the increase of F H , while that of Si – O 4-n Si n(n = 2, 3) concentration increases. These results can be explained by that active hydrogen atoms increase the probability of reducing oxygen from precursor in the plasma and prompting oxygen desorption from the growing surface. This low-temperature procedure for preparing nc- Si/SiO2 films opens up the possibility of fabricating the silicon-based thin-film solar cells onto low-cost glass substrates using nc- Si/SiO2 films.

scholarly journals Low temperature pulsed etching of large glass substrates

2003 ◽  
Vol 21 (4) ◽  
pp. 892-894
Author(s):  
L. Dubost ◽  
A. Belinger ◽  
J. Perrin ◽  
R. W. Boswell
Keyword(s):  
Low Temperature ◽  
Glass Substrates ◽  
Large Glass
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