P‐16.5: Investigation on metal corrosion characterise and resistance of touch panel

2021 ◽  
Vol 52 (S2) ◽  
pp. 1074-1077
Author(s):  
Li Baoran ◽  
Fan wenjin ◽  
Li Le ◽  
Xu Jiawei ◽  
Li Bisheng ◽  
...  
Keyword(s):  
Author(s):  
DongKwon Jeong ◽  
JuHyeon Ahn ◽  
SangIn Lee ◽  
JooHyuk Chung ◽  
ByungLyul Park ◽  
...  

Abstract This paper presents the problems, the solutions, and the development state of the novel 0.18 μm Cu Metal Process through failure analysis of the Alpha CPU under development at Samsung Electronics. The presented problems include : “Via Bottom Lifting” induced by the Cu Via void, “Via Bottom dissociation” due to the IMD stress, “Via side dissociation” due to the poor formation of the Barrier Metal, “Via short/not-open failure” due to the IMD lifting, and Cu metal Corrosion/Loss. The analysis was carried out on the Via Contact Test Chain Patterns, using the “Electron (ION) Charge Up” method. After carefully analyzing each of the failure types, process improvement efforts followed. As a result, the pass rate of the via contact Rc was brought up from a mere 20% to 95%, and the device speed higher than 1.1 GHz was achieved, which surpasses the target speed of 1 GHz.


Author(s):  
John Butchko ◽  
Bruce T. Gillette

Abstract Autoclave Stress failures were encountered at the 96 hour read during transistor reliability testing. A unique metal corrosion mechanism was found during the failure analysis, which was creating a contamination path to the drain source junction, resulting in high Idss and Igss leakage. The Al(Si) top metal was oxidizing along the grain boundaries at a faster rate than at the surface. There was subsurface blistering of the Al(Si), along with the grain boundary corrosion. This blistering was creating a contamination path from the package to the Si surface. Several variations in the metal stack were evaluated to better understand the cause of the failures and to provide a process solution. The prevention of intergranular metal corrosion and subsurface blistering during autoclave testing required a materials change from Al(Si) to Al(Si)(Cu). This change resulted in a reduced corrosion rate and consequently prevented Si contamination due to blistering. The process change resulted in a successful pass through the autoclave testing.


Author(s):  
Daniel Cavasin ◽  
Abdullah Yassine

Abstract Bond pad metal corrosion was observed during assembly process characterization of a 0.13um Cu microprocessor device. The bond pad consisted of 12kÅ of Al-0.5%Cu atop 9kÅ of Cu, separated by a thin Ta diffusion barrier. The corrosion was first noted after the wafer dicing process. Analysis of the pad surface revealed pitting-type corrosion, consistent with published reports of classic galvanic cell reactions between Al2Cu (theta phase) particles and the surrounding Al pad metal. Analysis of the bond pads on samelot wafers which had not been diced showed higher-thanexpected incidence of hillock and pit hole defects on the Al surface. Statistically designed experiments were formulated to investigate the possibility that the observed pre-saw pad metal defects act as nucleation sites for galvanic corrosion during the sawing process. Analyses of the experimental samples were conducted using optical and scanning electron microscopy, along with focused ion beam deprocessing and energy dispersive X-ray. This paper explores the relationship between the presence of these pre-existing defects and the propensity for the bond pads to corrode during the dicing process, and reviews the conditions under which pit hole defects are formed during the final stages of the Cu-metallized wafer fabrication process. Indications are that strict control of wafer fab backend processes can reduce or eliminate the incidence of such defects, resulting in elimination of bond pad corrosion in the wafer dicing process.


2018 ◽  
Vol 47 (5) ◽  
pp. 22-29
Author(s):  
T. Terent’ev ◽  
◽  
V. Shakhnov ◽  
A. Vlasov ◽  
A. Krivoshein ◽  
...  
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2021 ◽  
Vol 11 (13) ◽  
pp. 6234
Author(s):  
Ciprian Neagoe ◽  
Ioan Albert Tudor ◽  
Cristina Florentina Ciobota ◽  
Cristian Bogdanescu ◽  
Paul Stanciu ◽  
...  

Microencapsulation of sodium nitrate (NaNO3) as phase change material for high temperature thermal energy storage aims to reduce costs related to metal corrosion in storage tanks. The goal of this work was to test in a prototype thermal energy storage tank (16.7 L internal volume) the thermal properties of NaNO3 microencapsulated in zinc oxide shells, and estimate the potential of NaNO3–ZnO microcapsules for thermal storage applications. A fast and scalable microencapsulation procedure was developed, a flow calorimetry method was adapted, and a template document created to perform tank thermal transfer simulation by the finite element method (FEM) was set in Microsoft Excel. Differential scanning calorimetry (DSC) and transient plane source (TPS) methods were used to measure, in small samples, the temperature dependency of melting/solidification heat, specific heat, and thermal conductivity of the NaNO3–ZnO microcapsules. Scanning electron microscopy (SEM) and chemical analysis demonstrated the stability of microcapsules over multiple tank charge–discharge cycles. The energy stored as latent heat is available for a temperature interval from 303 to 285 °C, corresponding to onset–offset for NaNO3 solidification. Charge–self-discharge experiments on the pilot tank showed that the amount of thermal energy stored in this interval largely corresponds to the NaNO3 content of the microcapsules; the high temperature energy density of microcapsules is estimated in the range from 145 to 179 MJ/m3. Comparison between real tank experiments and FEM simulations demonstrated that DSC and TPS laboratory measurements on microcapsule thermal properties may reliably be used to design applications for thermal energy storage.


Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1475
Author(s):  
Masahiro Okamoto ◽  
Kazuya Murao

With the spread of devices equipped with touch panels, such as smartphones, tablets, and laptops, the opportunity for users to perform touch interaction has increased. In this paper, we constructed a device that generates multi-touch interactions to realize high-speed, continuous, or hands-free touch input on a touch panel. The proposed device consists of an electrode sheet printed with multiple electrodes using conductive ink and a voltage control board, and generates eight multi-touch interactions: tap, double-tap, long-press, press-and-tap, swipe, pinch-in, pinch-out, and rotation, by changing the capacitance of the touch panel in time and space. In preliminary experiments, we investigated the appropriate electrode size and spacing for generating multi-touch interactions, and then implemented the device. From the evaluation experiments, it was confirmed that the proposed device can generate multi-touch interactions with high accuracy. As a result, tap, press-and-tap, swipe, pinch-in, pinch-out, and rotation can be generated with a success rate of 100%. It was confirmed that all the multi-touch interactions evaluated by the proposed device could be generated with high accuracy and acceptable speed.


2020 ◽  
Vol 38 (5) ◽  
pp. 423-432
Author(s):  
Kebede W. Shinato ◽  
Feifei Huang ◽  
Ying Jin

AbstractIn this paper, the principle and application of atomic force microscopy (AFM) are reviewed and discussed in detail. Several scientific papers are used to find out data about AFM. The obtained scientific results are summarized to get a better understanding of the method and its application. The application of AFM for corrosion study is discussed in detail, and the possible conclusion is made based on the results of several articles. It is summarized that AFM is an important method to determine the surface phenomena of metal corrosion.


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