Possibilities of Integrating Surface Treatment of Bonding Parts in the Adhesive Bonding Process

1984 ◽  
pp. 257-266 ◽  
Author(s):  
Klaus Ruhsland
Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1018
Author(s):  
Giuseppe Fiorentino ◽  
Ben Jones ◽  
Sophie Roth ◽  
Edith Grac ◽  
Murali Jayapala ◽  
...  

A composite, capillary-driven microfluidic system suitable for transmitted light microscopy of cells (e.g., red and white human blood cells) is fabricated and demonstrated. The microfluidic system consists of a microchannels network fabricated in a photo-patternable adhesive polymer on a quartz substrate, which, by means of adhesive bonding, is then connected to a silicon microfluidic die (for processing of the biological sample) and quartz die (to form the imaging chamber). The entire bonding process makes use of a very low temperature budget (200 °C). In this demonstrator, the silicon die consists of microfluidic channels with transition structures to allow conveyance of fluid utilizing capillary forces from the polymer channels to the silicon channels and back to the polymer channels. Compared to existing devices, this fully integrated platform combines on the same substrate silicon microfluidic capabilities with optical system analysis, representing a portable and versatile lab-on-chip device.


1991 ◽  
Vol 10 (6) ◽  
pp. 335-338 ◽  
Author(s):  
P. Davies ◽  
C. Courty ◽  
N. Xanthopoulos ◽  
H. -J. Mathieu

2011 ◽  
Vol 694 ◽  
pp. 896-900 ◽  
Author(s):  
Yu Xin Li ◽  
De Yong Chen ◽  
Jun Bo Wang

This paper presents a method of low temperature adhesive bonding and stress isolation for MEMS resonant pressure sensor hermetic packaging using non-photosensitive benzo-cyclo-butene (BCB) from Dow Co. According to the bonding process, pre-bake time, pumping time, pressure placed on the sensor and the thickness of crosslink layer are the most important factors. Stress isolation is designed to minimize thermal stresses to the resonant pressure sensor package. Experimental results show that this bonding process is a viable for MEMS resonant pressure sensor with the bonding temperature below 250°C, measured bonding strength more than 30MPa, the temperature drift less than 0.05%/°C in the range of -40°C to 70°C(10% of that without stress isolation), and the bonding strength maintains well after thermal treatments, handling, bench testing and implantations.


Author(s):  
Gergely Juhász ◽  
Miklós Berczeli ◽  
Zoltán Weltsch

Over the last decade, the number of researches has increased in the field of bonding technologies. Researchers attempt to improve surface adhesion properties by surface treatments. Adhesive bonding is one of these bonding techniques, where it is important to see what surfaces will be bonded. One such surface property is wetting, which can be improved by several types of surface treatment. In recent years, atmospheric pressure plasmas have appeared, with which research is ongoing on surface treatments. In our research, we will deal with the effects of plasma surface treatment at atmospheric pressure and its measurement. In addition, we summarize the theoretical background of adhesion, surface tension and surface treatment with atmospheric pressure plasma. Our goal is to improve adhesion properties and thus the adhesion quality.


2010 ◽  
Vol 2010 (DPC) ◽  
pp. 002326-002360
Author(s):  
Erkan Cakmak ◽  
Bioh Kim ◽  
Viorel Dragoi

The process of wafer-level bonding is being successfully used to form MEMS devices. Wafer level bonding may be realized by different methods such as thermo compression, transient liquid phase, anodic, glass frit, or polymer bonding. These methods have different requirements and the choice of wafer level bonding method is defined by the application type. Metal TCB has a wide variety of applications with materials of choice including Au, Cu and Al. 3D electrical connections are created by the use of Cu-Cu TCB; while CMOS MEMS devices may be realized by Al-Al TCB. In this study the wafer level bonding process of Cu-Cu and Al-Al TCB are characterized. The effects and significance of various bonding process parameters and surface treatment methods are reported on the final bond interfaces integrity and strength. Analysis methods include SAM, SEM, AFM, and four point bending test. Al-Al TCB samples were investigated on the interfacial adhesion energy and bond quality. IAE and bond quality were found to be positively correlated with bonding temperature. A bonding temperature of 500 °C or greater is necessary to obtain bond strengths of 8–10 J/m2. A positive relation between IAE and bonding temperature was observed for Cu-Cu TCB. IAE's of greater then 10 J/m2 were obtained on bonded samples that do not show a post bond residual seam on the bonding interface. An acid based pre treatment was shown to impact the surface properties of the initial metal surface hence affecting the IAE. Post bond annealing processes showed the most significant impact on the IAE of the Cu-Cu TCB system. To obtain comparable IAE values the Al-Al TCB method requires a higher bonding temperature. However the Cu-Cu TCB is sensitive to the initial metal surface condition and requires surface treatment processes prior to bonding to obtain high quality bonding results.


1970 ◽  
Vol 2 (2) ◽  
pp. 93-99 ◽  
Author(s):  
Harold Schonhorn ◽  
F. W. Ryan ◽  
R. H. Hansen

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