Normal Waveguide Approach of Light Propagation Through Porous Semiconductors

2009 ◽  
pp. 101-116
Keyword(s):  
Light Propagation ◽  
Porous Semiconductors

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

Holographic moving picture recording and observation of ultrashort pulsed laser light propagation

2008 ◽  
Vol 36 (Supplement) ◽  
pp. 201-202
Author(s):  
Yasuhiro Awatsuji ◽  
Kenzo Nishio ◽  
Shogo Ura ◽  
Toshihiro Kubota
Keyword(s):  
Light Propagation ◽  
Laser Light ◽  
Pulsed Laser ◽  
Ultrashort Pulsed Laser

scholarly journals OAM light propagation through tissue

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Netanel Biton ◽  
Judy Kupferman ◽  
Shlomi Arnon
Keyword(s):  
Light Propagation ◽  
Biological Imaging ◽  
Gaussian Beams ◽  
Medical Implants ◽  
Optical Wireless ◽  
Scattering Media ◽  
Valuable Contribution ◽  
Light Beams ◽  
First Time ◽  
Diffuse Media

AbstractA major challenge in use of the optical spectrum for communication and imaging applications is the scattering of light as it passes through diffuse media. Recent studies indicate that light beams with orbital angular momentum (OAM) can penetrate deeper through diffuse media than simple Gaussian beams. To the best knowledge of the authors, in this paper we describe for the first time an experiment examining transmission of OAM beams through biological tissue with thickness of up to a few centimeters, and for OAM modes reaching up to 20. Our results indicate that OAM beams do indeed show a higher transmittance relative to Gaussian beams, and that the greater the OAM, the higher the transmittance also up to 20, Our results extend measured results to highly multi scattering media and indicate that at 2.6 cm tissue thickness for OAM of order 20, we measure nearly 30% more power in comparison to a Gaussian beam. In addition, we develop a mathematical model describing the improved permeability. This work shows that OAM beams can be a valuable contribution to optical wireless communication (OWC) for medical implants, optical biological imaging, as well as recent innovative applications of medical diagnosis.

scholarly journals Recent advancements and perspectives on light management and high performance in perovskite light-emitting diodes

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Shaoni Kar ◽  
Nur Fadilah Jamaludin ◽  
Natalia Yantara ◽  
Subodh G. Mhaisalkar ◽  
Wei Lin Leong
Keyword(s):  
High Performance ◽  
Light Propagation ◽  
Light Emission ◽  
Review Article ◽  
Rapid Progress ◽  
Light Emitting ◽  
Materials Engineering ◽  
Perovskite Materials ◽  
Light Management ◽  
Photon Recycling

Abstract Perovskite semiconductors have experienced meteoric rise in a variety of optoelectronic applications. With a strong foothold on photovoltaics, much focus now lies on their light emission applications. Rapid progress in materials engineering have led to the demonstration of external quantum efficiencies that surpass the previously established theoretical limits. However, there remains much scope to further optimize the light propagation inside the device stack through careful tailoring of the optical processes that take place at the bulk and interface levels. Photon recycling in the emitter material followed by efficient outcoupling can result in boosting external efficiencies up to 100%. In addition, the poor ambient and operational stability of these materials and devices restrict further commercialization efforts. With best operational lifetimes of only a few hours reported, there is a long way to go before perovskite LEDs can be perceived as reliable alternatives to more established technologies like organic or quantum dot-based LED devices. This review article starts with the discussions of the mechanism of luminescence in these perovskite materials and factors impacting it. It then looks at the possible routes to achieve efficient outcoupling through nanostructuring of the emitter and the substrate. Next, we analyse the instability issues of perovskite-based LEDs from a photophysical standpoint, taking into consideration the underlying phenomena pertaining to defects, and summarize recent advances in mitigating the same. Finally, we provide an outlook on the possible routes forward for the field and propose new avenues to maximally exploit the excellent light-emitting capabilities of this family of semiconductors.

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