Anelasticity in Al-Alloy Thin Films: A Micro-mechanical Analysis

2014 ◽  
pp. 107-112
Author(s):  
J. P. M. Hoefnagels ◽  
L. I. J. C. Bergers ◽  
M. G. D. Geers
Keyword(s):  
Thin Films ◽  
Mechanical Analysis ◽  
Al Alloy

Creep characterization of Al alloy thin films for use in MEMS applications

2004 ◽  
Vol 76 (1-4) ◽  
pp. 272-278 ◽  
Author(s):  
R. Modlinski ◽  
A. Witvrouw ◽  
P. Ratchev ◽  
R. Puers ◽  
J.M.J. den Toonder ◽  
...  
Keyword(s):  
Thin Films ◽  
Al Alloy

Corrosion and Tribological Behaviour of BN Thin Films Deposited Using Magnetron Sputtering

2021 ◽  
Vol 9 (2) ◽  
pp. 24-39
Author(s):  
Mukhtiar Singh ◽  
Hitesh Vasudev ◽  
Ravinder Kumar
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Magnetron Sputtering ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Base Material ◽  
Electrochemical Corrosion ◽  
Mechanical Analysis ◽  
Tribological Behaviour ◽  
Structural Morphology

Boron nitride coatings were synthesised on 316L stainless steel substrates through the radio frequency magnetron sputtering from a target made of hexagonal boron nitride. The process of deposition was conducted in three separate N2 and Ar system mixing regimes. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) techniques investigated the microstructure morphology and composition of the BN films at varying ratio of N2 and Ar plasma. This research aimed to examine the effects of changing the N2 gas ratio on the structure and structural morphology of c-BN coatings. Using QAr / QN2-5/1 ratios, an increased consistency of the microstructure and further c-BN step formation suggest a fundamental technique for producing superior quality cubic boron nitride films. The electrochemical corrosion test and mechanical analysis was performed to study corrosion and tribological behaviour of the BN coating, and the results showed more improvement in corrosion and tribilogical behaviour in case of BN2 regime. The BN2 regime showed a maximum corrosion resistance of around 1.114 mpy (miles per year). The young's modulus of 346Gpa in magnitude in case of BN2 thin film was found to be higher as compared to base material and other two thin films.

Femtosecond Laser-Induced Breakdown Spectral Analysis of Cu-Al Alloy Sputtered Thin Films

2015 ◽  
Vol 42 (6) ◽  
pp. 0615001
Author(s):  
蔡志龙 Cai Zhilong ◽  
杨秋松 Yang Qiusong ◽  
王阳 Wang Yang
Keyword(s):  
Thin Films ◽  
Spectral Analysis ◽  
Femtosecond Laser ◽  
Al Alloy ◽  
Laser Induced Breakdown

Homogeneous Al-Ti and Al-Ti-Si Thin Alloy Films

1985 ◽  
Vol 54 ◽  
Author(s):  
Albertus G. Dirks ◽  
Tien Tien ◽  
Janet M. Towner
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Phase Formation ◽  
Alloy Composition ◽  
Al Alloy ◽  
Second Phase ◽  
Alloy Films ◽  
Microstructure And Properties

ABSTRACTThe microstructure and properties of thin films depends strongly upon the alloy composition. A study was made of the metallurgical aspects of homogeneous Al alloy films, particularly the binary Al-Ti and the ternary Al-Ti-Si systems. Electrical resistivity, grain size morphology, second phase formation and electromigration have been studied as a function of the alloy composition and its heat treatment.

Surface Characteristics, Etching Behaviors and Chemicalmechanical Polishing of Aluminum Alloy thin Films

1997 ◽  
Vol 477 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Jun Wu ◽  
Yee-Shyi Chang
Keyword(s):  
Thin Films ◽  
Alloy Composition ◽  
Surface Characteristics ◽  
Corrosion Current ◽  
Native Oxide ◽  
Al Alloy ◽  
Abrasive Particles ◽  
Mechanical Abrasion ◽  
Underlying Mechanisms ◽  
Auxiliary Role

ABSTRACTEtching behaviors of various Al alloy thin films in H2O2-based acidic etchants are investigated in this study. The pH and H2O2 content in the etchant are varied in order to simulate the case where Al thin films are subject to chemical-mechanical polishing (CMP) using slurries of different compositions. Corrosion current and thickness of the native oxide on pure-Al, AI-1%Si, Al-0.5%Cu, AI-1%Si-0.5%Cu, and AI-1%Cu thin films are determined from Tafel and ESCA analyses respectively. Comparisons between etch rate and CMP polish rate data suggest that Al-CMP removal process depends strongly on the chemical reactions by the oxidizer (slurry). Mechanical abrasion by the abrasive particles plays only an auxiliary role during Al CMP. In addition, alloy composition (% Si and % Cu) influence both etching and polishing behaviors to a great extent. The underlying mechanisms for etching and polishing are discussed.

Cu and Dilute Binary Cu(Ti), Cu(Sn) and Cu(Al) Thin Films: Texture, Grain Growth and Resistivity

2002 ◽  
Vol 721 ◽  
Author(s):  
A. Gungor ◽  
K. Barmak ◽  
A. D. Rollett ◽  
C. Cabral ◽  
J. M. E. Harper
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Fiber Texture ◽  
Al Alloy ◽  
Alloy Films ◽  
Transmission Electron ◽  
Pure Cu

AbstractAnnealing Cu and dilute Cu(Ti), Cu(Sn) and Cu(Al) alloy films resulted in the strengthening of film texture, with the strongest <111> fiber texture being found for Cu(Ti). Annealing also resulted in a decrease of electrical resistivity and the growth of grains, with the largest grain size and lowest resistivity being seen for pure Cu itself. Among the alloy films, the lowest resistivity was found for Cu(Ti) and the largest grain size for Cu(Al). Electron beam evaporated films with compositions in the range of 2.0-3.0 at% and thicknesses in the range of 420-540 nm were annealed at 400°C for 5 hours. Four point probe resistance measurement, xray diffraction and transmission electron microscopy were used to follow the changes in film resistivity, texture and grain size.

Evaluation of Mo-based Amorphous Alloy Thin Films Exhibiting High Crystallization Temperature

2005 ◽  
Vol 894 ◽  
Author(s):  
Junpei Sakurai ◽  
Seiichi Hata ◽  
Ryusuke Yamauchi ◽  
Akira Shimokohbe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Alloy ◽  
Crystallization Temperature ◽  
Alloy Composition ◽  
Phase Distribution ◽  
Amorphous State ◽  
Al Alloy ◽  
High Crystallization ◽  
High Crystallization Temperature

AbstractThis paper presents the characteristics of Mo-based (Mo-Zr based) amorphous alloys exhibiting a high crystallization temperature. In order to investigate the alloy composition showing an amorphous state in the Mo-Zr-X (X=Si and Al) alloy system, thin film libraries were prepared at first by combinatorial arc plasma deposition (CAPD). The composition region corresponding to the amorphous state was identified in the libraries with X-ray diffraction. On the basis of the alloy composition and phase distribution of the thin film libraries, additional amorphous Mo-Zr-Si and Mo-Zr-Al thin films were prepared by a carousel sputtering system. The crystallization temperature Tc of the amorphous Mo50Zr(50-x)Six thin films exceeded 1073 K. However, the Mo-Zr-Si thin films were so brittle that they could not be subjected to tensile testing. In the Mo-Zr-Al thin films, Tc of the Mo-rich MoxZr(90-x)Al10 and MoxZr(76-x)Al24 thin films exceeded 973 K. Although the toughness of Mo-based amorphous alloy thin films could be improved slightly by adding Al, the amorphous Mo-Zr-Al thin films were also brittle.

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