Graphein: A Novel Optical High-Radix Switch Architecture for 3D Integration

Author(s):  
Jie Jian ◽  
Mingche Lai ◽  
Liquan Xiao ◽  
Weixia Xu
Author(s):  
Supreet Jeloka ◽  
Reetuparna Das ◽  
Ronald G. Dreslinski ◽  
Trevor Mudge ◽  
David Blaauw

2018 ◽  
Vol 2018 ◽  
pp. 1-8
Author(s):  
Jie Jian ◽  
Mingche Lai ◽  
Liquan Xiao

The demand from exascale computing has made the design of high-radix switch chips an attractive and challenging research field in EHPC (exascale high-performance computing). The static power, due to the thermal sensitivity and process variation of the microresonator rings, and the cross talk noise of the optical network become the main bottlenecks of the network’s scalability. This paper proposes the analyze model of the trimming power, process variation power, and signal-to-noise ratio (SNR) for the Graphein-based high-radix optical switch networks and uses the extra channels and the redundant rings to decrease the trimming power and the process variation power. The paper also explores the SNR under different configurations. The simulation result shows that when using 8 extra channels in the 64×64 crossbar optical network, the trimming power reduces almost 80% and the process variation power decreases 65% by adding 16 redundant rings in the 64×64 crossbar optical network. All of these schemes have little influence on the SNR. Meanwhile, the greater channel spacing has great advantages to decrease the static power and increase the SNR of the optical network.


Author(s):  
Tania Braun ◽  
Karl-Friedrich Becker ◽  
Michael Topper ◽  
Rolf Aschenbrenner ◽  
Martin Schneider-Ramelow
Keyword(s):  

2021 ◽  
Vol 37 (01) ◽  
pp. 045-052
Author(s):  
Mario Bazanelli Junqueira Ferraz ◽  
Guilherme Constante Preis Sella

AbstractNasal dorsal preservation surgery was described more than 100 years ago, but recently has gained prominence. Our objective is to show the surgical technique, the main indications and counterindications, and the complications. It is a technique that does not cause the detachment of the upper lateral cartilage (ULC) from the nasal septum, and has the main following sequence: preparation of the septum and its resection can be at different levels (high or low, i.e., SPAR [septum pyramidal adjustment and repositioning] A or B); preparation of the pyramid; transversal osteotomy; lateral osteotomy(s); and septopyramidal adjustment. The result is a nose with a lower radix than the original, a deprojection of the nasal dorsum tending to maintain its original shape; an increase in the interalar distance (IAD) and enlargement of the nasal middle ⅓; and loss of projection of the nasal tip and roundness of the nostrils. Thus, the ideal candidate is the one who benefits from such side effects, that is: tension nose, that is, high radix with projected dorsum, projected anterior nasal septal angle (ANSA), narrow middle ⅓, narrow IAD, thin nostrils and straight perpendicular plate of the ethmoid (PPE), and, depending on the characteristics, the deviated nose. The counterindications are low radix, irregularities in the nasal dorsum, ANSA lower than rhinion, and a wide middle ⅓. And the main stigmas are: a nose with a very low radix, middle ⅓ enlarged, residual hump, and saddling of the supratip area. Other issues of this technique are: the shape of the radix; the need or not to remove PPE; wide dorsum; irregular dorsum; ANSA lower than rhinion; weak cartilages; long nasal bone; deviated PPE; and obsessive patient. We conclude that this is a great technique for noses with characteristics suitable to it; care must be taken with the stigmas it can cause.


Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 89
Author(s):  
Jongwon Lee ◽  
Kilsun Roh ◽  
Sung-Kyu Lim ◽  
Youngsu Kim

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.


Author(s):  
Dan Alistarh ◽  
Hitesh Ballani ◽  
Paolo Costa ◽  
Adam Funnell ◽  
Joshua Benjamin ◽  
...  

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