Application of In-situ IR-Ellipsometry in Electrochemistry to Study Ultra-Thin Films

2014 ◽  
pp. 287-302
Author(s):  
Jörg Rappich ◽  
Karsten Hinrichs ◽  
Guoguang Sun ◽  
Xin Zhang
Keyword(s):  
Thin Films ◽  
In Situ Ir

In situ IR observation of photo-chemically deposited silicon nitride thin films

1991 ◽  
Vol 48-49 ◽  
pp. 409-413 ◽  
Author(s):  
T. Wadayama ◽  
T. Hihara ◽  
A. Hatta ◽  
W. Suëtaka
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
In Situ Ir

A chamber for the in‐situ IR measurement of C60 thin films while doping with alkali metals

1994 ◽  
Vol 65 (3) ◽  
pp. 760-761 ◽  
Author(s):  
Daniel Koller ◽  
Michael C. Martin ◽  
P. W. Stephens ◽  
L. Mihaly
Keyword(s):  
Thin Films ◽  
Alkali Metals ◽  
In Situ Ir

In situ IR ellipsometry study of the adhesion and growth of plasma deposited silica thin films on stainless steel substrates

1996 ◽  
Vol 290-291 ◽  
pp. 264-270 ◽  
Author(s):  
N. Bertrand ◽  
B. Drévillon ◽  
J.E. Klemberg-Sapieha ◽  
L. Martinu
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Silica Thin Films ◽  
In Situ Ir ◽  
Steel Substrates

In Situ IR Absorption Study of H Bonding in a-Si:H Thin Films

1991 ◽  
Vol 219 ◽  
Author(s):  
M. Katiyar ◽  
G. F. Feng ◽  
J. R. Abelson ◽  
N. Maley
Keyword(s):  
Thin Films ◽  
Hydrogenated Amorphous Silicon ◽  
Reflectance Spectroscopy ◽  
Ir Absorption ◽  
Infrared Reflectance ◽  
Absorption Study ◽  
In Situ Ir ◽  
Dc Magnetron Reactive Sputtering ◽  
Hydrogenated Amorphous

ABSTRACTWe have used real time, in situ infrared reflectance spectroscopy to study the evolution of Si-H bonding during the growth of hydrogenated amorphous silicon (a-Si:H) by dc magnetron reactive sputtering. The surface Si-H stretching mode (2100 cm-l) is observed in films 5 Å thick and the 2000 cm-l mode, which has been attributed to isolated monohydrides in the bulk, appears for thickness (d) < 10–15 Å For larger thicknesses the intensity of both modes increases approximately linearly. These trends are interpreted in terms of the nucleation and coalescence of islands for d> 15 Å followed by bulk-like growth.

In situ IR Spectroscopy as a Tool to Better Understand the Growth Mechanisms of Plasma Polymers Thin Films

2015 ◽  
Vol 12 (11) ◽  
pp. 1200-1207 ◽  
Author(s):  
Sylvie Ligot ◽  
Damien Thiry ◽  
Pierre-Antoine Cormier ◽  
Patrice Raynaud ◽  
Philippe Dubois ◽  
...  
Keyword(s):  
Thin Films ◽  
Ir Spectroscopy ◽  
Growth Mechanisms ◽  
Plasma Polymers ◽  
In Situ Ir ◽  
In Situ Ir Spectroscopy

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

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