Jitter of 3-cycle Laser Pulses from a gas-filled capillary — Single Shot SPIDER Pulse Characterization at 1 kHz

Author(s):  
J. Biegert ◽  
W. Kornelis ◽  
G. Steinmeyer ◽  
J. W. Tisch ◽  
U. Keller ◽  
...  
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Maria Ruchkina ◽  
Dina Hot ◽  
Pengji Ding ◽  
Ali Hosseinnia ◽  
Per-Erik Bengtsson ◽  
...  

AbstractLaser-induced grating spectroscopy (LIGS) is for the first time explored in a configuration based on the crossing of two focused femtosecond (fs) laser pulses (800-nm wavelength) and a focused continuous-wave (cw) laser beam (532-nm wavelength). A thermal grating was formed by multi-photon absorption of the fs-laser pulses by $$\hbox {N}_{{2}}$$ N 2 with a pulse energy around 700 $$\upmu $$ μ J ($$\sim $$ ∼ 45 TW/$$\hbox {cm}^{2}$$ cm 2 ). The feasibility of this LIGS configuration was investigated for thermometry in heated nitrogen gas flows. The temperature was varied from room temperature up to 750 K, producing strong single-shot LIGS signals. A model based on the solution of the linearized hydrodynamic equations was used to extract temperature information from single-shot experimental data, and the results show excellent agreement with the thermocouple measurements. Furthermore, the fluorescence produced by the fs-laser pulses was investigated. This study indicates an 8-photon absorption pathway for $$\hbox {N}_{{2}}$$ N 2 in order to reach the $$\hbox {B}^{3}\Pi _{g}$$ B 3 Π g state from the ground state, and 8 + 5 photon excitation to reach the $$\hbox {B}^{2}\Sigma _{u}^{+}$$ B 2 Σ u + state of the $$\hbox {N}_{2}^{+}$$ N 2 + ion. At pulse energies higher than 1 mJ, the LIGS signal was disturbed due to the generation of plasma. Additionally, measurements in argon gas and air were performed, where the LIGS signal for argon shows lower intensity compared to air and $$\hbox {N}_{{2}}$$ N 2 .


2020 ◽  
Vol 8 ◽  
Author(s):  
Dahui Wang ◽  
Yinren Shou ◽  
Pengjie Wang ◽  
Jianbo Liu ◽  
Zhusong Mei ◽  
...  

Abstract Single-shot laser-induced damage threshold (LIDT) measurements of multi-type free-standing ultrathin foils were performed in a vacuum environment for 800 nm laser pulses with durations τ ranging from 50 fs to 200 ps. The results show that the laser damage threshold fluences (DTFs) of the ultrathin foils are significantly lower than those of corresponding bulk materials. Wide band gap dielectric targets such as SiN and formvar have larger DTFs than semiconductive and conductive targets by 1–3 orders of magnitude depending on the pulse duration. The damage mechanisms for different types of targets are studied. Based on the measurement, the constrain of the LIDTs on the laser contrast is discussed.


2014 ◽  
Vol 117 (3) ◽  
pp. 1473-1478 ◽  
Author(s):  
S. P. Banerjee ◽  
R. Fedosejevs

2019 ◽  
Vol 65 (11-12) ◽  
pp. 680-689
Author(s):  
Rok Petkovšek ◽  
Vid Agrež ◽  
Jaka Petelin ◽  
Luka Černe ◽  
Udo Bünting ◽  
...  

This paper presents an investigation of pulse-on-demand operation in fibre and hybrid lasers. Two methods for efficient gain control that enable the generation of laser pulses at arbitrary times with controlled pulse parameters are presented. The method of direct modulation of the pump power in the high-power laser oscillator is shown to generate pulses with a duration in the nanosecond range, with repetition rates varying during operation from a single shot to over 1 MHz. An advanced method using a combination of marker and idler seeding a fibre amplifier chain is investigated. Such a system can easily achieve repetition rates of several tens of MHz. The lasers’ performances were successfully tested in a real environment on an industrial platform for laser transfer printing. Similar concepts were used for a laser source with ultrashort laser pulses (femtosecond range) on demand by using a mode-locked seed as a source and a solid-state amplifier to achieve high pulse energy and peak power.


Optica ◽  
2021 ◽  
Author(s):  
William Peters ◽  
Travis Jones ◽  
Anatoly Efimov ◽  
Emanuele Pedersoli ◽  
Laura Foglia ◽  
...  

2018 ◽  
Vol 32 (28) ◽  
pp. 1830003 ◽  
Author(s):  
G. P. Zhang ◽  
M. Murakami ◽  
M. S. Si ◽  
Y. H. Bai ◽  
Thomas F. George

Information technology depends on how one can control and manipulate signals accurately and quickly. Transistors are at the core of modern technology and are based on electron charges. But as the device dimension shrinks, heating becomes a major problem. The spintronics explores the spin degree of electrons and thus bypasses the heat, at least in principle. For this reason, spin-based technology offers a possible solution. In this review, we survey some of the latest developments in all-optical switching (AOS), where ultrafast laser pulses are able to reverse spins from one direction to the other deterministically. But AOS only occurs in a special group of magnetic samples and within a narrow window of laser parameters. Some samples need multiple pulses to switch spins, while others need a single-shot pulse. To this end, there are several models available, but the underlying mechanism is still under debate. This review is different from other prior reviews in two aspects. First, we sacrifice the completeness of reviewing existing studies, while focusing on a limited set of experimental results that are highly reproducible in different labs and provide actual switched magnetic domain images. Second, we extract the common features from existing experiments that are critical to AOS, without favoring a particular switching mechanism. We emphasize that given the limited experimental data, it is really premature to identify a unified mechanism. We compare these features with our own model prediction, without resorting to a phenomenological scheme. We hope that this review serves the broad readership well.


2019 ◽  
Vol 116 ◽  
pp. 89-93 ◽  
Author(s):  
Fengyan Cao ◽  
Chengshuai Yang ◽  
Dalong Qi ◽  
Jiali Yao ◽  
Yilin He ◽  
...  

Author(s):  
K. Y. Kim ◽  
B. Yellampalle ◽  
A. J. Taylor ◽  
G. Rodriguez ◽  
J. H. Glownia

2013 ◽  
Vol 205-206 ◽  
pp. 358-363 ◽  
Author(s):  
Philipp Saring ◽  
Anna Lena Baumann ◽  
Stefan Kontermann ◽  
Wolfgang Schade ◽  
Michael Seibt

This paper investigates the influence of different number of laser pulses on contact behavior and conductivity of the surface layer of femtosecond laser microstructured, sulfur-doped silicon. Single shot laser processed silicon (Pink Silicon) is characterized by low surface roughness, whereas five shot laser processed silicon (Grey Silicon) has an elevated sulfur content with a surface roughness low enough to maintain good contacting. To laterally confine the laser induced pn-junction part of the Grey Silicon sample surface is etched off. The etching depth is confirmed to be sufficient to completely remove the active n-type sulfur layer. While Pink Silicon shows little or no lateral conductivity within the laser processed layer, Grey Silicon offers acceptable conductivity, just as expected by the fact of having incorporated a higher sulfur dopant content. Recombination dominates the irradiated regions of Pink Silicon and suppresses excess charge carrier collection. Grey Silicon, while showing sufficient lateral conductivity, still shows regions of lower conductivity, most likely dominated by the laser irradiation-induced formation of dislocations. According to our results, the optimum laser pulse number for electrical and structural properties is expected to be in the range between one and five laser pulses.


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