Thin Film Epitaxial Growth by Laser Ablation

1996 ◽  
pp. 67-83 ◽  
Author(s):  
A. Mele ◽  
A. Giardini ◽  
R. Teghil
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Epitaxial Growth

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Characterization of SrRuO3 thin film grown by laser ablation at temperatures above 400 °C

2001 ◽  
Vol 90 (1) ◽  
pp. 162-166 ◽  
Author(s):  
Xiaodong Fang ◽  
Takeshi Kobayashi
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Srruo3 Thin Film

Epitaxial Growth of (001)Rh Thin Film on (001)MgO Single-Crystal Substrate by Sputtering

2005 ◽  
Vol 44 (10) ◽  
pp. 7605-7607 ◽  
Author(s):  
Kiyohiko Kato ◽  
Yoshio Abe ◽  
Katsutaka Sasaki
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Crystalline SiC thin film deposition by laser ablation: influence of laser surface activation

1998 ◽  
Vol 66 (2) ◽  
pp. 183-187 ◽  
Author(s):  
M. Diegel ◽  
F. Falk ◽  
R. Hergt ◽  
H. Hobert ◽  
H. Stafast
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Surface ◽  
Surface Activation

scholarly journals Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

2012 ◽  
Vol 14 (8) ◽  
Author(s):  
Sabri Alkis ◽  
Mustafa Alevli ◽  
Salamat Burzhuev ◽  
Hüseyin Avni Vural ◽  
Ali Kemal Okyay ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Laser Ablation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Solution ◽  
Pressure Chemical

EPITAXIAL GROWTH OF SrF2 ON Ge(111)-c(2×8) AS STUDIED BY PHOTOELECTRON DIFFRACTION AND HOLOGRAPHY

1999 ◽  
Vol 06 (06) ◽  
pp. 1085-1089 ◽  
Author(s):  
S. OMORI ◽  
T. KOZAKAI ◽  
Y. NIHEI
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Atomic Structure ◽  
Forward Scattering ◽  
Epitaxial Thin Film ◽  
Photoelectron Diffraction ◽  
Interference Fringes

We have investigated the photoelectron diffraction (PED) from a SrF 2 epitaxial thin film on Ge(111) from the viewpoint of holographic inversion for imaging the atomic structure. The holographic interference fringes were retrieved from the PED pattern including a wide variety of diffraction features via averaging the pattern around each forward-scattering peak. Furthermore, another method for enhancing holographic fringes by subtracting one photoelectron hologram from another at slightly different kinetic energies was theoretically investigated.

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

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