scholarly journals Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices

Micro ◽  
2022 ◽  
Vol 2 (1) ◽  
pp. 23-53
Author(s):  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Giuseppe Greco

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are excellent materials for the next generation of high-power and high-frequency electronic devices. In fact, their wide band gap (>3 eV) and high critical electric field (>2 MV/cm) enable superior performances to be obtained with respect to the traditional silicon devices. Hence, today, a variety of diodes and transistors based on SiC and GaN are already available in the market. For the fabrication of these electronic devices, selective doping is required to create either n-type or p-type regions with different functionalities and at different doping levels (typically in the range 1016–1020 cm−3). In this context, due to the low diffusion coefficient of the typical dopant species in SiC, and to the relatively low decomposition temperature of GaN (about 900 °C), ion implantation is the only practical way to achieve selective doping in these materials. In this paper, the main issues related to ion implantation doping technology for SiC and GaN electronic devices are briefly reviewed. In particular, some specific literature case studies are illustrated to describe the impact of the ion implantation doping conditions (annealing temperature, electrical activation and doping profiles, surface morphology, creation of interface states, etc.) on the electrical parameters of power devices. Similarities and differences in the application of ion implantation doping technology in the two materials are highlighted in this paper.

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3923
Author(s):  
Fabrizio Roccaforte ◽  
Patrick Fiorenza ◽  
Marilena Vivona ◽  
Giuseppe Greco ◽  
Filippo Giannazzo

Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. This paper concisely reviews the main selective doping techniques for SiC power devices technology. In particular, due to the low diffusivity of the main impurities in SiC, ion implantation is the method of choice to achieve selective doping of the material. Hence, most of this work is dedicated to illustrating the main features of n-type and p-type ion-implantation doping of SiC and discussing the related issues. As an example, one of the main features of implantation doping is the need for post-implantation annealing processes at high temperatures (above 1500 °C) for electrical activation, thus having a notable morphological and structural impact on the material and, hence, on some device parameters. In this respect, some specific examples elucidating the relevant implications on devices’ performances are reported in the paper. Finally, a short overview of recently developed non-conventional doping and annealing techniques is also provided, although these techniques are still far from being applied in large-scale devices’ manufacturing.


2010 ◽  
Vol 645-648 ◽  
pp. 1101-1106 ◽  
Author(s):  
Jürgen Biela ◽  
Mario Schweizer ◽  
Stefan Waffler ◽  
Benjamin Wrzecionko ◽  
Johann Walter Kolar

Switching devices based on wide band gap materials as SiC oer a signicant perfor- mance improvement on the switch level compared to Si devices. A well known example are SiC diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor- mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.


2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.


Author(s):  
Zhongxin Wang ◽  
Guodong Wang ◽  
Xintong Liu ◽  
Shouzhi Wang ◽  
Tailin Wang ◽  
...  

Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new generation of wide band gap semiconductor materials, have become a hot spot in the semiconductor field due to...


Author(s):  
Marco Buzzo ◽  
Mauro Ciappa ◽  
Wolfgang Fichtner

Abstract Secondary electrons potential contrast (SEPC) by scanning electron microscopy has emerged as a powerful tool for two-dimensional quantitative dopant imaging. The main component of the SEPC signal arises from the difference in the built-in potential between differently doped regions; which is very high in wide-band-gap semiconductors and particularly intense in SiC. This paper, after discussing the physical principles leading to the dopant contrast and the proper experimental setup, investigates the impact of relevant factors such as experimental conditions, surface effects, and sample preparation on image quality. The quantitative capabilities of this technique are demonstrated by the analysis of different test structures and prototypes of power devices such as MOSFET and JFET. The application to completely process devices demonstrates that SEPC represents an unequalled characterization technique, which provides accurate imaging and dopant profiling capabilities for silicon carbide devices.


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