Membrane Fabrication with Galvanic Etch-Stop

1998 ◽  
pp. 139-142
Author(s):  
C. M. A. Ashruf ◽  
E. L. Oemar ◽  
P. J. French ◽  
P. M. Sarro ◽  
P. M. M. C. Bressers ◽  
...  
Keyword(s):  
Membrane Fabrication ◽  
Etch Stop

Optimization of PES Nanocomposite Membrane Preparation Using Statistical Analysis and Experimental Design

2019 ◽  
Author(s):  
Yasin Orooji ◽  
Fatemeh Noorisafa ◽  
Nahid Imami ◽  
Amir R. Chaharmahali
Keyword(s):  
Statistical Analysis ◽  
Experimental Design ◽  
Factorial Design ◽  
Fractional Factorial Design ◽  
Fractional Factorial ◽  
Nanocomposite Membrane ◽  
Membrane Preparation ◽  
Membrane Fabrication

<p>Using experimental design and statistical analysis (½ Fractional Factorial Design), this study investigates the effect of different parameters in the membrane fabrication on the performance of nanocomposite PES/TiO<sub>2</sub> membrane. </p>

MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications

2003 ◽  
Vol 799 ◽  
Author(s):  
Haruki Yokoyama ◽  
Hiroki Sugiyama ◽  
Yasuhiro Oda ◽  
Michio Sato ◽  
Noriyuki Watanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Group V ◽  
Group Iii ◽  
Mocvd Growth ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Inp Substrates

ABSTRACTThis paper studies the decomposition characteristic of group-III sources during InAlAsSb growth on InP substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylindium (TMI), trimethylaluminum (TMA), trimethylantimony (TMSb) and arsine (AsH3). A composition analysis of InAlAsSb layers shows that the group-III compositions in the InAlAsSb layer change remarkably when the flow rate of the group-V source is varied. To clarify the reason for this phenomenon, the growth rates of InAsSb and AlAsSb component are examined. Their changes indicate that TMSb suppresses the decomposition of TMA while AsH3 enhances it. Moreover, the HEMT structure with InP/InAlAsSb Schottky barrier layer, whose InP layer acts as a recess-etch-stop layer, is fabricated for the first time. The I-V characteristics of a fabricated Schottky barrier diode indicate that the reverse leakage current of InP/InAlAsSb is about one order of magnitude smaller than that of commonly used InP/InAlAs.

scholarly journals Maskless lithography using silicon oxide etch-stop layer induced by megahertz repetition femtosecond laser pulses

2011 ◽  
Vol 19 (11) ◽  
pp. 10834 ◽  
Author(s):  
Amirkianoosh Kiani ◽  
Krishnan Venkatakrishnan ◽  
Bo Tan ◽  
Venkat Venkataramanan
Keyword(s):  
Femtosecond Laser ◽  
Silicon Oxide ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Maskless Lithography ◽  
Etch Stop ◽  
Etch Stop Layer

Optimisation of a Pre-Metal-Dielectric with a contact etch stop layer for 0.18um and 0.13um technologies

2000 ◽  
Author(s):  
B. De Jaeger ◽  
G. Van den bosch ◽  
M. Van Hove ◽  
I. Debusschere ◽  
M. Schaekers ◽  
...  
Keyword(s):  
Etch Stop ◽  
Etch Stop Layer
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