MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications

2003 ◽  
Vol 799 ◽  
Author(s):  
Haruki Yokoyama ◽  
Hiroki Sugiyama ◽  
Yasuhiro Oda ◽  
Michio Sato ◽  
Noriyuki Watanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Group V ◽  
Group Iii ◽  
Mocvd Growth ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Inp Substrates

ABSTRACTThis paper studies the decomposition characteristic of group-III sources during InAlAsSb growth on InP substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylindium (TMI), trimethylaluminum (TMA), trimethylantimony (TMSb) and arsine (AsH3). A composition analysis of InAlAsSb layers shows that the group-III compositions in the InAlAsSb layer change remarkably when the flow rate of the group-V source is varied. To clarify the reason for this phenomenon, the growth rates of InAsSb and AlAsSb component are examined. Their changes indicate that TMSb suppresses the decomposition of TMA while AsH3 enhances it. Moreover, the HEMT structure with InP/InAlAsSb Schottky barrier layer, whose InP layer acts as a recess-etch-stop layer, is fabricated for the first time. The I-V characteristics of a fabricated Schottky barrier diode indicate that the reverse leakage current of InP/InAlAsSb is about one order of magnitude smaller than that of commonly used InP/InAlAs.

InAs Quantum Dots for Optoelectronic Device Applications

2004 ◽  
Vol 829 ◽  
Author(s):  
K. Stewart ◽  
S. Barik ◽  
M. Buda ◽  
H. H. Tan ◽  
C. Jagadish
Keyword(s):  
Quantum Dots ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Organic Chemical ◽  
Group V ◽  
Inas Quantum Dots ◽  
Group Iii ◽  
Device Applications ◽  
Metal Organic

ABSTRACTIn this paper we discuss the growth of self-assembled InAs quantum dots (QDs) on both GaAs and InP substrates by low pressure Metal Organic Chemical Vapor Deposition. The influence of various growth parameters, such as the deposition time, the QD overlayer growth temperature, the V/III ratio and the group III and/or group V interdiffusion on QD formation are discussed and compared for the two systems. Stacking issues and preliminary results for an InAs/GaAs QD laser are also presented.

Numerical Investigation of Pulsed Chemical Vapor Deposition of Aluminum Nitride to Reduce Particle Formation

2011 ◽  
Author(s):  
Derek Endres ◽  
Sandip Mazumder
Keyword(s):  
Gas Phase ◽  
Direct Contact ◽  
Gas Flow ◽  
Film Growth ◽  
Chemical Vapor ◽  
Particle Formation ◽  
Group V ◽  
Flow Rates ◽  
Group Iii ◽  
Reactor Pressure

Particles of aluminum nitride (AlN) have been observed to form during epitaxial growth of AlN films by metal organic chemical vapor deposition (MOCVD). Particle formation is undesirable because particles do not contribute to the film growth, and are detrimental to the hydraulic system of the reactor. It is believed that particle formation is triggered by adducts that are formed when the group-III precursor, namely tri-methyl-aluminum (TMAl), and the group-V precursor, namely ammonia (NH3), come in direct contact in the gas-phase. Thus, one way to eliminate particle formation is to prevent the group-III and the group-V precursors from coming in direct contact at all in the gas-phase. In this article, pulsing of TMAl and NH3 is numerically investigated as a means to reduce AlN particle formation. The investigations are conducted using computational fluid dynamics (CFD) analysis with the inclusion of detailed chemical reaction mechanisms both in the gas-phase and at the surface. The CFD code is first validated for steady-state (non-pulsed) MOCVD of AlN against published data. Subsequently, it is exercised for pulsed MOCVD with various pulse widths, precursor gas flow rates, wafer temperature, and reactor pressure. It is found that in order to significantly reduce particle formation, the group-III and group-V precursors need to be separated by a carrier gas pulse, and the carrier gas pulse should be at least 5–6 times as long as the precursor gas pulses. The studies also reveal that with the same time-averaged precursor gas flow rates as steady injection (non-pulsed) conditions, pulsed MOCVD can result in higher film growth rates because the precursors are incorporated into the film, rather than being wasted as particles. The improvement in growth rate was noted for both horizontal and vertical reactors, and was found to be most pronounced for intermediate wafer temperature and intermediate reactor pressure.

Properties Of Inp Simultaneously Doped With Zinc And Sulfur Grown By Mocvd

1996 ◽  
Vol 442 ◽  
Author(s):  
C. M. Alavanja ◽  
C. J. Pinzone ◽  
S. K. Sputz ◽  
M. Geva
Keyword(s):  
Energy Levels ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Group V ◽  
Zn Diffusion ◽  
Group Iii ◽  
Donor Acceptor ◽  
And Performance ◽  
P Type ◽  
Secondary Ion

AbstractAs the p-type dopant most often used in metalorganic chemical vapor deposition (MOCVD) of Group III - Group V compound semiconductors, Zn presents problems in device design and performance because of its high diffusivity in these materials. While Zn diffusion into n-type layers such as InP:S has been observed frequently, there is little known as to the electronic and optical properties of the resultant material. We have grown InP samples by MOCVD which are doped with both Zn and S to levels as high as 3×1018 cm−3. These samples were analyzed by electrochemical C-V profiling, van der Pauw-Hall analysis, secondary ion mass spectroscopy (SIMS), and low temperature (10K) photoluminescence spectroscopy (PL). We have determined that good hole mobility is maintained in InP:Zn samples that are simultaneously doped with S up to a level of 4×1017 cm−3. PL analysis of co-doped samples shows peaks between 0.91 and 0.92 μm which are indicative of donor-acceptor transitions, and broad peaks with energy levels of approximately 1.0 μm which may be indicative of ZnS complexes or precipitates. SIMS analysis of Zn diffusion into Fe doped substrates shows that Zn diffusion is reduced in the presence of S in the lattice.

Organometallic Chemical Vapor Deposition of Gaas Using Novel Organometallic Precursors

1988 ◽  
Vol 131 ◽  
Author(s):  
R. A. Jones ◽  
A. H. Cowley ◽  
B. L. Benac ◽  
K. B. Kidd ◽  
J. G. Ekerdt ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Total System ◽  
Alkyl Aryl ◽  
Group V ◽  
Group Iii ◽  
Design And Synthesis ◽  
System Pressure ◽  
Organometallic Precursors

ABSTRACTThe goals of the research are the design and synthesis of a new class of precursor compounds for III/V compound semiconductor materials, growth of films with these precursors and developoment of an understanding of the relationships between precursor structure, film growth reactions and film properties. Conventional OMCVD of III/V compound materials has a number of inherent safety and processing problems associated with the group III alkyl and group V hydride sources. Our approach to these problems is the synthesis of a single precursor with a fixed III:V stoichiometry and a direct two center, two electron sigma III V bond., These, compounds have the general formula,[R2M(R 2 E)] 2 and R2M(R 2 E) 2M R2 (MM = Al, Ga, In; E=P, As; R, R = alkyl, aryl). The III V bond in these compounds is stronger than the other bonds and the minium deposition temperature can be controlled by employing subsituents that undergo facile hydrocarbon elimination.A typical example is the use of [Me 2Ga(µ t Bu 2 As)] 2 as the single source for GaAs films. The organometallic precursor is a solid crystalline powder which is maintained at 130°C to generate enough vapor for OMCVD. Typical film growth conditions involve the use of H2 or He as the carrier gas, substrate temperatures of 500 to 700°C, and a total system pressure of 0.0002 Torr. GaAs(100), Si(100) (As doped 30 off toward (011) and quartz have been used as substrates. Film composition has been established with XPS. The Ga 3d, As 3d, and C ls signals at 18.8, 40.9, and 284.6 eV, respectively, reveal the films to be 1:1 Ga:As and void of carbon. The carbon levels are less than 1000 ppm. X ray diffraction and SEM results suggest polycrystalline GaAs on quartz and epitaxial GaAs on GaAs(100) and Si(100). (2 K) photoluminescence measurements on GaAs, grown on semi insulating GaAs(100) and Si doped GaAs(0 100) at 570 C. produce PL signals indicating that crystalline domains are present, the measurements indicate degeneratively n doped material and show that good Ga:As ratios and low levels (ca. 1 ppm) of impurities are present. Growth rates:∼ 1.0 mm/hour.

Chemical Beam Epitaxy of III-V Semiconductor Heterostructures

1987 ◽  
Vol 102 ◽  
Author(s):  
W. T. Tsang
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Beam Epitaxy ◽  
Group V ◽  
Group Iii ◽  
Group Iv Semiconductors ◽  
Gas Source Mbe

ABSTRACTThis paper reviews briefly some of the recent progress in chemical beam epitaxy (CBE) for the preparation of GaInAs(P)/InP and GaAs/AlGaAs quantum wells, superlattices, and heterostructure devices. Chemical beam epitaxy can be viewed as a chemical vapor deposition process but with the pressure inside the growth chamber sufficient, ow (< 10-4 torr) so that the transport of the gaseous reactants becomes molecular beam instead of via viscous flow. This not only eliminates the complicated gas phase reactions and the stagnant boundary layer above the substrate through which the reactants have to diffuse, but also allows for quick transitions of material compositions and dopings as those achievable by molecular beam epitaxy (MBE). For the growth of HI-V semiconductors, the group Inl elements are derived by the pyrolysis of organometallics (or inorganometallics such as dopant gases) on the heated substrate surface, while the group V elements are derived by the thermal decomposition of hydrides using a high temperature cracker. For the growth of group IV semiconductors, beams of inorganometallic compounds are used. Thus, both organometallic and inorganometallic compounds can be used as starting sources. There are two other alternatives: the gas source MBE (GSMBE), which uses group III elements evaporated from solid sources as in MBE and thermally decomposed hydrides, and the metalorganic MBE (MOMBE), which uses metalorganics as group III sources and group V elements evaporated from solid sources as in MBE. These other processes will not be reviewed here. Introd

MOCVD of Group III Chalcogenide Compound Semiconductors

1993 ◽  
Vol 335 ◽  
Author(s):  
Andrew R. Barron
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
Cubic Phase ◽  
Molecular Control ◽  
Group Iii ◽  
Mocvd Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Chalcogenide Compound ◽  
Pressure Phase

AbstractA review is presented of recent advances in the metal-organic chemical vapor deposition (MOCVD) of thin films of group III-chalcogenides. The deposition of thermodynamic phases of composition ME and M2E3 (M = Ga, In; E = S, Se. Te) will be presented. Also included is a discussion of the development of molecular control over the structure of deposited films and the atmospheric pressure MOCVD growth of the high pressure phase of InS and a meta-stable cubic phase of GaS.

scholarly journals Ab initio study for molecular-scale adsorption, decomposition and desorption on AlN surfaces during MOCVD growth

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jiadai An ◽  
Xianying Dai ◽  
Runqiu Guo ◽  
Lansheng Feng ◽  
Tianlong Zhao
Keyword(s):  
Ab Initio ◽  
Density Functional ◽  
Surface Growth ◽  
Group V ◽  
Group Iii ◽  
Mocvd Growth ◽  
Rich Condition ◽  
Molecular Scale ◽  
Aln Buffer ◽  
Luminescence Detectors

Abstract Since AlGaN offers new opportunities for the development of the solid state ultraviolet (UV) luminescence, detectors and high-power electronic devices, the growth of AlN buffer substrate is concerned. However, the growth of AlN buffer substrate during MOCVD is regulated by an intricate interplay of gas-phase and surface reactions that are beyond the resolution of experimental techniques, especially the surface growth process. We used density-functional ab initio calculations to analyze the adsorption, decomposition and desorption of group-III and group-V sources on AlN surfaces during MOCVD growth in molecular-scale. For AlCH3 molecule the group-III source, the results indicate that AlCH3 is more easily adsorbed on AlN (0001) than (000$$\overline{1}$$ 1 ¯ ) surface on the top site. For the group-V source decomposition we found that NH2 molecule is the most favorable adsorption source and adsorbed on the top site. We investigated the adsorption of group-III source on the reconstructed AlN (0001) surface which demonstrates that NH2-rich condition has a repulsion effect to it. Furthermore, the desorption path of group-III and group-V radicals has been proposed. Our study explained the molecular-scale surface reaction mechanism of AlN during MOCVD and established the surface growth model on AlN (0001) surface.

The Nature of Point Defects and their Influence on Diffusion Processes in Silicon at High Temperatures

1982 ◽  
Vol 14 ◽  
Author(s):  
U. GÖsele ◽  
T.Y. Tan
Keyword(s):  
Diffusion Processes ◽  
Surface Oxidation ◽  
Group V ◽  
Group Iii ◽  
Self Diffusion ◽  
Slowing Down ◽  
Silicon Crystals ◽  
Order Of Magnitude ◽  
Theoretical Results

ABSTRACTThe paper highlights recent progress in understanding the role of vacancies and self-interstitials in self- and impurity diffusion in silicon above about 700°C. How surface oxidation of silicon leads to a perturbation of the pointdefect population is described. An analysis of the resulting oxidationenhanced or -retarded diffusion of group III and group V dopants shows that under thermal equilibrium as well as under oxidation conditions both vacancies and self-interstitials are present. For sufficiently long times vacancies and self-interstitials attain dynamical equilibrium which involves their recombination and spontaneous thermal creation in the bulk of silicon crystals. The existence and the nature of a recombination barrier slowing down the recombination process are discussed in this context. Recent experimental and theoretical results on the diffusion of gold in silicon enable us to determine the selfinterstitial component of silicon self-diffusion and to obtain an estimate of the respective vacancy contribution. The two components turn out to be of the same order of magnitude from 700°C up to the melting point.

scholarly journals Optoelectronic and Birefringence Properties of Weakly Mg Doped ZnO Thin lms Prepared By Spray Pyrolysis.

2021 ◽  
Author(s):  
Yassine Bouachibaa ◽  
ABDELOUADOUD MAMMERI ◽  
Abderrahmane Bouabellou ◽  
Rabia Oualid ◽  
Saber Saidi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Chemical Vapor ◽  
Ultra Violet ◽  
Dip Coating ◽  
Group V ◽  
Group Iii ◽  
Type Semiconductor ◽  
Direct Band ◽  
P Type

Abstract Zinc Oxide (ZnO) is is a multipurpose semiconductor with many uses such as ultra-capacitor electrode [1], spintronic devices [2], multigas sensing [3–6], piezoelectric devices [7], ultra-violet LEDs [8], detectors [9] as well as waveguides [10–12]. In its thin film form, ZnO has a large adaptation to several deposition methods such as chemical vapor deposition [13], pulsed laser deposition [14], spray pyrolysis [15], dip-coating [16] and electrochemical deposition [17]. ZnO has very interesting characteristics for application in electronics and optoelectronics devices, especially its exciton binding energy of 60 meV at 300K, a wide direct band gap of 3.37 eV [18]. In addition to an ordinary and extraordinary refractive indexes of ne = 2.006 and no = 1.990 respectively [19]. To modify its electrical properties, ZnO was doped with Group III elements such as Al, Ga and In which acted as donor dopants to reinforce its n-type electrical nature and group V elements such as N, P, As and Sb which acted as acceptor dopants which changed ZnO to be a p-type semiconductor [20]. Controlling the refractive index of ZnO thin films was achieved by several ways including thermal annealing [21] and doping with In [22], Te, N [23] and Mg [24]. However, the e↵ect of dopants on the optical and electrical properties of ZnO is still not well understood.

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