Impacts of Emitter Layer Thickness on the Cutoff Frequency of GeSn/Ge Heterojunction Phototransistors

Author(s):  
Harshvardhan Kumar ◽  
Rikmantra Basu
Geophysics ◽  
2003 ◽  
Vol 68 (6) ◽  
pp. 1922-1933 ◽  
Author(s):  
Steven A. Arcone ◽  
Paige R. Peapples ◽  
Lanbo Liu

Field observations are tested against modal propagation theory to find the practical limitations upon derivation of layer permittivities and signal attenuation rates from a radar moveout profile over two‐layer ground. A 65‐MHz GPR pulse was transmitted into a 30‐60‐cm‐thick surface waveguide of wet, organic silty to gravelly soil overlying a drier refracting layer of sand and gravel. Reflection profiles, trench stratigraphy, resistivity measurements, and sediment analysis were used to quantify the propagation medium and possible attenuation mechanisms. Highly dispersive modal propagation occurred within the waveguide through 35 m of observation. The fastest phase velocity occurred at the waveguide cutoff frequency of 30 MHz, which was well received by 100‐MHz antennas. This speed provides the refractive index of the lower layer, so the near‐cutoff frequencies must match a lower layer refraction. A slower, lower frequency phase of the dispersed pulse occurred at about 60–70 MHz, with an average attenuation rate of about 0.4 dB/m. Similar events appear to have reflected back and forth along the waveguide. Modal theory for the average layer thickness shows all primary events to be different aspects of a TE1 mode, predicts the correct 30–70‐MHz phase speeds and low‐frequency cutoff phenomenon, but also predicts that the 60–70‐MHz group speed should be slightly lower than observed. An Airy phase was apparently out of the bandwidth. Two‐dimensional finite‐difference time‐domain modeling qualitatively simulates the main field results. After accounting for an inverse dependency of amplitude on the square of the range, the high resistivity of the surface layer accounts for the 0.4‐dB/m attenuation rate for the 60–70‐MHz phase of the pulse. However, erratic amplitudes, interface roughness, and the reflected packets indicate scattering. We conclude that permittivities can be well estimated from dispersive moveout profiles given an average surface layer thickness, and the wide bandwidth of GPR antennas allows the full dispersion to be seen. Attenuation rates appear to be derivable from the higher frequency part of our dispersive event, for which attenuation might be least affected by the waveguide dispersion.


2019 ◽  
Vol 36 (7) ◽  
pp. E1 ◽  
Author(s):  
Yuki Kawachiya ◽  
Shunsuke Murai ◽  
Motoharu Saito ◽  
Koji Fujita ◽  
Katsuhisa Tanaka

2004 ◽  
Vol 14 (03) ◽  
pp. 890-896 ◽  
Author(s):  
SANKHA S. MUKHERJEE ◽  
SYED S. ISLAM

Two-dimensional simulations have been carried out using the Atlas® device simulator to investigate the effects of the buffer layer thickness and doping concentration on the electrical characteristics of the SiC MESFET. The variations of transconductance, output resistance, gate-source capacitance, gate-drain capacitance and (cutoff frequency) f T with respect to the change in buffer layer thickness and doping concentration have been investigated. It is observed that the performances of MESFET can be improved by reducing the leakage of channel carrier into the substrate at high drain bias, which is achieved by increasing buffer layer doping density and/or increasing buffer layer thickness. For a SiC MESFET with buffer layer thickness of 0.3μm and gate length of 1μm, drain current increases from 0.1A/ μm to above 0.45A/ μm as the buffer layer doping density is decreased from 1.9 × 1017 cm -3 to 1 × 1016 cm -3. The simulations were carried out at a gate-source voltage of –1V and a drain-source voltage of 15V. Under similar conditions, the output resistance decreases from 1.2 × 106 Ω/μ m to 1.2 × 106 Ω/μ m , and the transconductance decreases from 5.9mS/ μm to 5.3mS/ μm, and f T decreases from 11GHz to 8GHz.


Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.


Author(s):  
H. Kung ◽  
A.J. Griffin ◽  
Y.C. Lu ◽  
K.E. Sickafus ◽  
T.E. Mitchell ◽  
...  

Materials with compositionally modulated structures have gained much attention recently due to potential improvement in electrical, magnetic and mechanical properties. Specifically, Cu-Nb laminate systems have been extensively studied mainly due to the combination of high strength, and superior thermal and electrical conductivity that can be obtained and optimized for the different applications. The effect of layer thickness on the hardness, residual stress and electrical resistivity has been investigated. In general, increases in hardness and electrical resistivity have been observed with decreasing layer thickness. In addition, reduction in structural scale has caused the formation of a metastable structure which exhibits uniquely different properties. In this study, we report the formation of b.c.c. Cu in highly textured Cu/Nb nanolayers. A series of Cu/Nb nanolayered films, with alternating Cu and Nb layers, were prepared by dc magnetron sputtering onto Si {100} wafers. The nominal total thickness of each layered film was 1 μm. The layer thickness was varied between 1 nm and 500 nm with the volume fraction of the two phases kept constant at 50%. The deposition rates and film densities were determined through a combination of profilometry and ion beam analysis techniques. Cross-sectional transmission electron microscopy (XTEM) was used to examine the structure, phase and grain size distribution of the as-sputtered films. A JEOL 3000F high resolution TEM was used to characterize the microstructure.


Author(s):  
Masahiro Ito ◽  
Yuitch Iwagaki ◽  
Hiroshi Murakami ◽  
Kenji Nemoto ◽  
Masato Yamamoto ◽  
...  

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