Study of metal-semiconductor interface states using deep level transient spectroscopy

1987 ◽  
Vol 44 (3) ◽  
pp. 273-277 ◽  
Author(s):  
H. Zhang ◽  
Y. Aoyagi ◽  
S. Iwai ◽  
S. Namba
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface States ◽  
Semiconductor Interface ◽  
Transient Spectroscopy

A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

2010 ◽  
Vol 96 (10) ◽  
pp. 103507 ◽  
Author(s):  
Chun Gong ◽  
Eddy Simoen ◽  
Niels Posthuma ◽  
Emmanuel Van Kerschaver ◽  
Jef Poortmans ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Deep Level Transient Spectroscopy ◽  
Surface Passivation ◽  
Deep Level ◽  
Interface States ◽  
Spectroscopy Study ◽  
Transient Spectroscopy ◽  
Silicon Interface

A Deep-Level Transient Spectroscopy Comparison of the SiO2/Si and Al2O3/Si Interface States

2019 ◽  
Vol 41 (4) ◽  
pp. 37-44 ◽  
Author(s):  
Eddy Simoen ◽  
Aude Rothschild ◽  
Bart Vermang ◽  
Jef Poortmans ◽  
Robert Mertens
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface States ◽  
Transient Spectroscopy

Deep-Level Transient Spectroscopy of Interface States in ZnO/PrCoOx/ZnO Thin-Film Junctions

1992 ◽  
Vol 31 (Part 2, No. 10A) ◽  
pp. L1429-L1431 ◽  
Author(s):  
Yoshihiko Yano ◽  
Yukihiko Shirakawa ◽  
Hisao Morooka
Keyword(s):  
Thin Film ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface States ◽  
Zno Thin Film ◽  
Transient Spectroscopy

Evaluation of Interface States in ZnO Varistors by Spectral Analysis of Deep Level Transient Spectroscopy

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 899-900 ◽  
Author(s):  
Yasuhiro Ohbuchi ◽  
Junya Yoshino ◽  
Yoichi Okamoto ◽  
Jun Morimoto
Keyword(s):  
Spectral Analysis ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface States ◽  
Zno Varistors ◽  
Transient Spectroscopy

Interface states in ZnO varistor with Mn, Co, and Cu impurities

1994 ◽  
Vol 9 (1) ◽  
pp. 112-118 ◽  
Author(s):  
Yoshihiko Yano ◽  
Yoshizo Takai ◽  
Hisao Morooka
Keyword(s):  
Transition Metals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface States ◽  
Model Systems ◽  
Excess Oxygen ◽  
Molecular Orbital Calculations ◽  
Transition Metal Doping ◽  
Zno Varistor ◽  
Transient Spectroscopy

The interface states in ZnO with impurities of transition-metals, Mn, Co, and Cu, were investigated by the DLTS (deep-level transient spectroscopy) measurements in ZnO/PrCoOx/ZnO junctions as model systems of ZnO ceramic varistors and by the SCF-Xα-SW molecular orbital calculations using simplified cluster models. The DLTS signals, correlated to the doping of Mn and Co, are obtained with ZnO/PrCox/ZnO junctions. The signals correspond to the interface states due to the transition-metal doping. Xα calculations indicate that the interface states attributed to the doping of transition-metals, Mn, Co, and Cu, in ZnO are created between the valence band and the conduction band, which consist of transition-metals 3d character. The impurities of transition-metals affect interface states as well as the adsorbed excess oxygen.

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