Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method

2014 ◽  
Vol 557 ◽  
pp. 288-291 ◽  
Author(s):  
Dong Wang ◽  
Yuta Nagatomi ◽  
Shuta Kojima ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Low Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface States ◽  
Spectroscopy Method ◽  
Gate Stacks ◽  
Transient Spectroscopy

A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

2010 ◽  
Vol 96 (10) ◽  
pp. 103507 ◽  
Author(s):  
Chun Gong ◽  
Eddy Simoen ◽  
Niels Posthuma ◽  
Emmanuel Van Kerschaver ◽  
Jef Poortmans ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Deep Level Transient Spectroscopy ◽  
Surface Passivation ◽  
Deep Level ◽  
Interface States ◽  
Spectroscopy Study ◽  
Transient Spectroscopy ◽  
Silicon Interface

A Deep-Level Transient Spectroscopy Comparison of the SiO2/Si and Al2O3/Si Interface States

2019 ◽  
Vol 41 (4) ◽  
pp. 37-44 ◽  
Author(s):  
Eddy Simoen ◽  
Aude Rothschild ◽  
Bart Vermang ◽  
Jef Poortmans ◽  
Robert Mertens
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface States ◽  
Transient Spectroscopy

Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers

2017 ◽  
Vol 897 ◽  
pp. 238-241 ◽  
Author(s):  
Louise Lilja ◽  
Ildiko Farkas ◽  
Ian Booker ◽  
Jawad ul Hassan ◽  
Erik Janzén ◽  
...  
Keyword(s):  
Low Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Doping Level ◽  
Carrier Lifetime ◽  
Deep Level ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Drastic Decrease ◽  
Transient Spectroscopy ◽  
Low Temperature Photoluminescence

In this study we have grown thick 4H-SiC epitaxial layers with different n-type doping levels in the range 1E15 cm-3 to mid 1E18 cm-3, in order to investigate the influence on carrier lifetime. The epilayers were grown with identical growth conditions except the doping level on comparable substrates, in order to minimize the influence of other parameters than the n-type doping level. We have found a drastic decrease in carrier lifetime with increasing n-type doping level. Epilayers were further characterized with low temperature photoluminescence and deep level transient spectroscopy.

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