Simulation of thermophysical processes occurring in transition of the surface metal layer of a moving strong-current gas discharge electrode to an amorphous state

1996 ◽  
Vol 68 (5) ◽  
pp. 678-682
Author(s):  
�. I. Vitkin ◽  
A. I. Zolotovskii ◽  
I. P. Smyaglikov ◽  
V. D. Shimanovich
Keyword(s):  
Metal Layer ◽  
Amorphous State ◽  
Gas Discharge ◽  
Discharge Electrode ◽  
Strong Current ◽  
Surface Metal

Effect analysis of surface metal layer on step height standard

2021 ◽  
pp. 2140006
Author(s):  
Xiaodong Zhang ◽  
Suoyin Li ◽  
Zhiguo Han ◽  
Lin Zhao ◽  
Yanan Feng ◽  
...  
Keyword(s):  
White Light ◽  
Metal Layer ◽  
Step Height ◽  
Measuring Instrument ◽  
Effect Analysis ◽  
Measurement Capability ◽  
White Light Interferometer ◽  
Surface Metal ◽  
Measuring Machine ◽  
Measurement Deviation

In order to improve the measurement accuracy of the step height measuring instrument, a semiconductor process was used to prepare the step height standard for calibrating the instrument. Aiming at the problem of deviation in the white light interferometer measuring step height standard, the cause of the measurement deviation was theoretically analyzed, combining the optical theory and the principle of instrument. In addition, referring to the semiconductor sputtering process, a method of sputtering metal layer on the surface of the step structure was proposed, and a set of universal step height standards with a nominal value of [Formula: see text] nm were developed for the step height measuring instrument. Finally, the step height standards with the sputtered metal layer were compared and measured, using the white light interferometer and nanometer measuring machine (NMM). The measurement error of the white light interferometer can be effectively controlled within 1%, which is beneficial to verify the measurement capability of the step height measuring instrument.

scholarly journals CAE Modeling of Hot Stamping Tool Wear

2021 ◽  
Vol 346 ◽  
pp. 01041
Author(s):  
A. Chernov ◽  
Yu. Korobov ◽  
E. Raskatov
Keyword(s):  
Metal Layer ◽  
Hot Stamping ◽  
Hot Forging ◽  
The Finite Element Method ◽  
Hot Plastic Deformation ◽  
Contact Loads ◽  
Surface Metal ◽  
Railway Wheels ◽  
Maximum Contact ◽  
Punch Wear

To assess the wear of the hot stamping tool, a model of punch deformation under the influence of thermal and mechanical loads was developed. The shape and relative position of the punch and die were designed to localize maximum contact loads at a predetermined location. It was assumed that the punch wear is caused by a removal of the surface metal layer, due to decreasing its mechanical strength during hot plastic deformation. Simulation was performed by the finite element method in the Deform software package. A temperature field and wear pattern in the contact zone were calculated. With respect to the loads typical for hot forging railway wheels, the comparison showed that the wear in a numerical experiment is of the same level as the actual value of wear.

Effects of surface metal layer on the thermal contact resistance of carbon nanotube arrays

2005 ◽  
Vol 87 (21) ◽  
pp. 213108 ◽  
Author(s):  
Y. Wu ◽  
C. H. Liu ◽  
H. Huang ◽  
S. S. Fan
Keyword(s):  
Carbon Nanotube ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Metal Layer ◽  
Thermal Contact ◽  
Nanotube Arrays ◽  
Carbon Nanotube Arrays ◽  
Surface Metal

Influence of Vacancies and Pores that Appear during Irradiation in the Surface Metal Layer on Field Emission Current

2019 ◽  
Vol 11 (3) ◽  
pp. 03015-1-03015-5
Author(s):  
I. I. Musiienko ◽  
◽  
R. I. Kholodov ◽  
Keyword(s):  
Field Emission ◽  
Metal Layer ◽  
Emission Current ◽  
Field Emission Current ◽  
Surface Metal

Strong current gas discharge pulsed source of charged particle fluxes

2020 ◽  
Author(s):  
G. A. Pozdnyakov
Keyword(s):  
Charged Particle ◽  
Gas Discharge ◽  
Strong Current ◽  
Particle Fluxes

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

Structures and crystallization of vacuum-deposited amorphous Se and Sb films

1990 ◽  
Vol 48 (4) ◽  
pp. 140-141
Author(s):  
Makoto Shiojiri ◽  
Toshiyuki Isshiki ◽  
Tetsuya Fudaba ◽  
Yoshihiro Hirota
Keyword(s):  
Monte Carlo ◽  
Electron Microscope ◽  
Monte Carlo Method ◽  
Computer Program ◽  
Radial Distribution ◽  
Film Formation ◽  
Amorphous State ◽  
Two Dimensional ◽  
Amorphous Films ◽  
Binding Condition

In hexagonal Se crystal each atom is covalently bound to two others to form an endless spiral chain, and in Sb crystal each atom to three others to form an extended puckered sheet. Such chains and sheets may be regarded as one- and two- dimensional molecules, respectively. In this paper we investigate the structures in amorphous state of these elements and the crystallization.HRTEM and ED images of vacuum-deposited amorphous Se and Sb films were taken with a JEM-200CX electron microscope (Cs=1.2 mm). The structure models of amorphous films were constructed on a computer by Monte Carlo method. Generated atoms were subsequently deposited on a space of 2 nm×2 nm as they fulfiled the binding condition, to form a film 5 nm thick (Fig. 1a-1c). An improvement on a previous computer program has been made as to realize the actual film formation. Radial distribution fuction (RDF) curves, ED intensities and HRTEM images for the constructed structure models were calculated, and compared with the observed ones.

Microstructure of YBa2Cu3O7-x thin films deposited by dc sputtering

1989 ◽  
Vol 47 ◽  
pp. 172-173
Author(s):  
O. Eibl ◽  
G. Gieres ◽  
H. Behner
Keyword(s):  
Thin Films ◽  
Cross Sections ◽  
Intermediate Layer ◽  
Amorphous State ◽  
Critical Currents ◽  
Dc Sputtering ◽  
State Process ◽  
Diffraction Patterns ◽  
Film Substrate ◽  
Substrate Temperatures

The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voids was approximately 100 nm. Between the SrTiO3 substrate and the YBa2Cu3Ox film a densly grown crystalline intermediate layer approximately 150 nm thick covered the SrTiO3 substrate. EDX microanalyses showed that the layer consisted of Sr, Ba and Ti, however, did not contain Y and Cu. Crystallites of the layer were carefully tilted in the microscope and diffraction patterns were obtained in five different poles for every crystallite. These patterns were consistent with the phase (Ba1-XSrx)2TiO4. The intermediate layer was most likely formed during the annealing at 900°C. Its formation can be understood as a diffusion of Ba from the amorphously deposited film into the substrate and diffusion of Sr from the substrate into the film. Between the intermediate layer and the surface of the film the film consisted of YBa2Cu3O7-x grains. Films prepared in process 1 had Tc(R=0) close to 90 K, however, critical currents were as low as jc = 104A/cm2 at 77 K.

Photoelectrical Properties of Semiconductor in Contact with Gas Discharge Plasma

1997 ◽  
Vol 7 (5) ◽  
pp. 1039-1044
Author(s):  
N. N. Lebedeva ◽  
V. I. Orbukh ◽  
B. G. Salamov ◽  
M. Özer ◽  
K. Çolakoǧlu ◽  
...  
Keyword(s):  
Discharge Plasma ◽  
Gas Discharge ◽  
Gas Discharge Plasma ◽  
Photoelectrical Properties
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