Isolation of silicon film grown on porous silicon layer

1983 ◽  
Vol 12 (6) ◽  
pp. 973-982 ◽  
Author(s):  
Hiroshi Takai ◽  
Tadatsugu Itoh
Keyword(s):  
Porous Silicon ◽  
Silicon Film ◽  
Silicon Layer ◽  
Porous Silicon Layer

Polycrystalline Silicon Grown on Porous Silicon-on-Insulator Substrates

1996 ◽  
Vol 452 ◽  
Author(s):  
Klaus Y.J. Hsu ◽  
C. H. Lee ◽  
C. C. Yeh
Keyword(s):  
Porous Silicon ◽  
Low Temperature ◽  
Silicon Film ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon On Insulator ◽  
Cross Sectional ◽  
Diffraction Patterns ◽  
Si Films ◽  
Soi Substrates

AbstractInexpensive full-wafer SOI substrates are appealing for various applications such as ULSI. As an attempt to achieve this goal, low-temperature deposition of silicon on novel porous Si-on-insulator (PSOI) substrates was performed in this work. The bottom insulator was obtained by anodically oxidizing a pre-formed porous silicon film in HCl solution. The thickness, uniformity and quality of the resulted bottom oxide layer as well as the residual porous silicon layer above were well-controlled. Low-temperature PECVD growth of silicon on the PSOI wafer was conducted by using the residual porous silicon as the seed. Cross-sectional TEM pictures and electron diffraction patterns showed that poly-Si films were formed on PSOI substrates under the conditions of 98% hydrogen dilution ratio, 20 Watts RF power, and 300°C substrate temperature. Further thermal annealing at 1050°C for 30 minutes significantly enhanced the crystallinity of the deposited films. Combined with the excellent insulation ability of the bottom oxide, the technique is suitable for future inexpensive full-wafer SOI fabrication.

Effect of the Porous Silicon Layer Structure on Gas Adsorption

2020 ◽  
Vol 12 (4) ◽  
pp. 04020-1-04020-5
Author(s):  
A. P. Oksanich ◽  
◽  
S. E. Pritchin ◽  
M. A. Mashchenko ◽  
A. Yu. Bobryshev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Adsorption ◽  
Layer Structure ◽  
Silicon Layer ◽  
Porous Silicon Layer

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures

2020 ◽  
Vol 508 ◽  
pp. 145267
Author(s):  
P.V. Seredin ◽  
H. Leiste ◽  
A.S. Lenshin ◽  
A.M. Mizerov
Keyword(s):  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer

Sensing mechanism analysis on one-dimensional photonic crystal with air slot-porous silicon-air slot F–P cavity

2019 ◽  
Vol 33 (13) ◽  
pp. 1950159 ◽  
Author(s):  
Ying Chen ◽  
Xinbei Gao ◽  
Pei Luo ◽  
Yangmei Xu ◽  
Jinggang Cao ◽  
...  
Keyword(s):  
Refractive Index ◽  
Photonic Crystal ◽  
Porous Silicon ◽  
Structural Parameters ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Resonant Peak ◽  
Mechanism Analysis ◽  
Q Value ◽  
Quality Factor Q

Based on the evanescent wave resonance, a photonic crystal sensing structure with air slot-porous silicon-air slot Fabry–Perot cavity (F–P cavity) is proposed. Taking the F–P cavity as the sensing unit, when the gas to be detected is filled into the sensing unit, the refractive index of the air slot will be changed and the refractive index of the porous silicon layer will also be varied, both of which will shift the resonant peak and greatly increase the sensitivity of the sensor. By adjusting the structural parameters, the quality factor (Q value) can be optimized. A model for the relationship between the resonant wavelength and the refractive index of the detected organic gas was established, and the refractive index sensing performance was analyzed. The results show that the Q value of the structure can attain to 12312.2 and the sensitivity is about 8661.708 nm/RIU, which can provide effective theoretical reference and technical guidance for organic gas detection with low concentration.

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