Interfacial Reactions between Cu-Zr filler metal and alumina and kinetics of reaction layer growth

1998 ◽  
Vol 4 (2) ◽  
pp. 151-155 ◽  
Author(s):  
K. S. Bang ◽  
S. Liu
Keyword(s):  
Reaction Layer ◽  
Filler Metal ◽  
Layer Growth ◽  
Interfacial Reactions ◽  
Kinetics Of Reaction ◽  
Kinetics Of

Formation sequence of intermetallics and kinetics of reaction layer growth during solid state reaction between titanium and aluminum

Materialia ◽  
2020 ◽  
Vol 11 ◽  
pp. 100702
Author(s):  
Amlan Kar ◽  
Satish V. Kailas ◽  
Satyam Suwas
Keyword(s):  
Solid State ◽  
Reaction Layer ◽  
Solid State Reaction ◽  
Layer Growth ◽  
Kinetics Of Reaction ◽  
Kinetics Of

Influence of Content of Ni and Ag on Microstructure and Joint Strength of Lead-Free Solder Joint with Sn-Ag-Cu-Ni-Ge

2007 ◽  
Vol 353-358 ◽  
pp. 2033-2036 ◽  
Author(s):  
Ikuo Shohji ◽  
Satoshi Tsunoda ◽  
Hirohiko Watanabe ◽  
Tatsuhiko Asai
Keyword(s):  
Reaction Layer ◽  
Joint Strength ◽  
Heat Exposure ◽  
Layer Growth ◽  
Lead Free ◽  
Joint Interface ◽  
Lead Free Solder ◽  
Free Solder ◽  
Kinetics Of ◽  
Soldered Joint

An influence of content of Ni and Ag in a Sn-Ag-Cu-Ni-Ge lead-free solder has been investigated on microstructure and joint strength of the soldered joint under heat exposure conditions. The growth kinetics of the reaction layer formed at the joint interface has been investigated, and the apparent activation energy of the reaction layer growth has been also examined. Moreover, the soldered joints with Sn-Ag and Sn-Ag-Cu solders were prepared and were compared with the joints with the Sn-Ag-Cu-Ni-Ge solders.

Microstructural Development at Ti-Based Alloy/Coated SiC

1994 ◽  
Vol 343 ◽  
Author(s):  
M. Strangwood ◽  
C.B. Ponton ◽  
M.P. Delplancke ◽  
V. Vassileris ◽  
R. Winand
Keyword(s):  
Reaction Layer ◽  
Carbon Diffusion ◽  
Growth Conditions ◽  
Layer Growth ◽  
Microstructural Development ◽  
Composition And Structure ◽  
Kinetics Of Formation ◽  
Prolonged Heat ◽  
Kinetics Of ◽  
Rate Controlling Step

ABSTRACTThe kinetics of formation of reaction layers at the interface between a Ti-based alloy (β-21s) and graphite blocks coated first, by CVD techniques, with a 100 μm layer of SiC and then either TiC or C were determined. The rate controlling step for reaction at 900°C and 10 MPa for up to 6 hours was found to be carbon diffusion through the reaction layer. The behaviour was found to be consistent with that of composite systems for prolonged heat treatment and the same growth behaviour was exhibited by both systems. Incubation times of 0.42 and 0.9 hours were determined for reaction layer growth in the TiC- and C-coated systems respectively. The reaction layer/Ti-alloy bond strength was good but all couples failed readily, especially if any C layers remained. The growth conditions of TiC coatings by reactive magnetron sputtering were determined for two different types of gas mixtures: CH4/Ar and C2H2/Ar. The composition and structure of the films were extensively studied.

scholarly journals A Joining Process between Beryllium and Reduced-Activation Ferritic–Martensitic Steel by Plasma Sintering

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6348
Author(s):  
Jae-Hwan Kim ◽  
Taehyun Hwang ◽  
Masaru Nakamichi
Keyword(s):  
Intermetallic Compounds ◽  
Reaction Layer ◽  
Martensitic Steel ◽  
Layer Growth ◽  
Elemental Mapping ◽  
Parabolic Law ◽  
Plasma Sintering ◽  
Kinetics Of ◽  
Joining Process ◽  
Scanning Electron

To investigate the growth kinetics of the reaction layer and mechanical strength of joined materials, we joined beryllium and reduced-activation ferritic–martensitic steel (F82H) by plasma sintering under various conditions and characterized the joined region. Scanning electron microscopy revealed that the thickness of the reaction layer increased with an increase in the joining time and temperature. Line analyses and elemental mapping using an electron microprobe analyser showed that the reaction layer consists of Be–Fe intermetallic compounds, including Be12Fe, Be5Fe, and Be2Fe, with small amounts of chromium and tungsten. Owing to the time and temperature dependence of the reaction-layer thickness, the layer growth of Be–Fe intermetallic compounds obeys the parabolic law, and the activation energy for the reaction-layer growth was 116.2 kJ/mol. The bonding strengths of the joined materials varied inversely with the thickness of the reaction layer.

scholarly journals Study on Bonding of Aluminum Nitride to Metals(Report 2). Reaction Layer Growth in AlN to Molybdenum Joint Brazed using Ag-Cu-Ti Filler Metal.

1994 ◽  
Vol 12 (1) ◽  
pp. 122-125
Author(s):  
Yoshikuni Nakao ◽  
Kazutoshi Nishimoto ◽  
Kazuyoshi Saida ◽  
Kaoru Murabe ◽  
Yasuhiro Fukaya
Keyword(s):  
Aluminum Nitride ◽  
Reaction Layer ◽  
Filler Metal ◽  
Layer Growth

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Kinetics of reaction of 1-chloro-2,3-epoxypropane with low glycols

1972 ◽  
Vol 37 (5) ◽  
pp. 1698-1705 ◽  
Author(s):  
J. Novák
Keyword(s):  
Kinetics Of Reaction ◽  
Kinetics Of
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