Lubricating effect of graphene during ultra-precision mechanical polishing by atomic scale simulation

2021 ◽  
pp. 095440542110564
Author(s):  
Houfu Dai ◽  
Weilong Wu ◽  
Yang Hu
Keyword(s):  
Friction Coefficient ◽  
Potential Energy ◽  
Single Crystal ◽  
Solid Lubricant ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Energy Stress ◽  
Three Body ◽  
Diamond Abrasive

As a new two-dimensional material with unique friction and wear properties, graphene often serves as a solid lubricant. In order to better understand the lubrication effect of graphene in the process of three-body polishing of single crystal silicon with diamond abrasive, a molecular dynamics model of this process was established in this study. Further, the changes of coordination number, friction coefficient, temperature, potential energy, stress, and surface/subsurface damage in the process of three-body polishing were analyzed in detail. The results showed that graphene lubrication could enhance the heat dissipation and reduce the number of defect atoms, friction coefficient, potential energy, stress, and chips. Therefore, less subsurface damage and material resistance were observed in the workpiece with graphene lubrication during machining. In general, graphene can be used as a high-quality solid lubricant in the three-body polishing of single crystal silicon using diamond abrasive because of its excellent lubricating effect.

Mechanism of crack evolution in nano-indentation of single crystal silicon by atomistic simulations and theoretical analysis

2021 ◽  
pp. 095440622110064
Author(s):  
Yuqi Zhou ◽  
Houfu Dai ◽  
Ping Li
Keyword(s):  
Potential Energy ◽  
Single Crystal ◽  
Coordination Number ◽  
Single Crystal Silicon ◽  
Indentation Load ◽  
Crack Evolution ◽  
Crystal Silicon ◽  
Nano Indentation ◽  
Indentation Process ◽  
Calculated Stress

The molecular dynamics (MD) model of nano-indentation process was established to study the crack evolution in single crystal during nano-indentation. Two workpieces with different cracks and one workpiece with no crack were selected for indentation simulation in this study. The parameters of atom displacement, coordination number (CN), temperature, potential energy and loading force in the indentation process are analyzed in detail. Cracks were found to close during nano-indentation. Two modes of crack closure are observed: cooperative displacement and indentation failure. The existence of cracks will affect the size of transformation zone and the coordination number of atoms after indentation. Besides, the existence of cracks will reduce the increase of temperature and potential energy, and the closing mode of cracks is found to affect the value of indentation load. In addition, the change of stress with indentation depth at crack tip is calculated by theoretical model. The calculated stress curves reveal the evolution trend of cracks during indentation. These results provide guidance for the production of silicon wafer with higher surface quality.

A Study of Subsurface Damage Generation by Single Scratches of Silicon

1988 ◽  
Vol 140 ◽  
Author(s):  
J.H. Ahn ◽  
S. Danyluk
Keyword(s):  
Electrical Resistivity ◽  
Steady State ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Electrical Contacts ◽  
Crystal Silicon ◽  
Printed Circuit

AbstractThis paper describes the use of electrical resistivity to quantify the damage produced asa result of the scratching of single crystal silicon.The change in resistivity was measured as a function of time as a scratching diamond passed between four electrical contacts of a specially designed printed circuit and while thesilicon was heated to temperatures up to 300ºC. The data shows that the resistivity increases during scratching and reaches a steady state value if the silicon temperatureis below 200ºC. The conductivity recovers when the silicon temperature is 200ºC.

scholarly journals Subsurface damage and phase transformation in laser-assisted nanometric cutting of single crystal silicon

2020 ◽  
Vol 190 ◽  
pp. 108524 ◽  
Author(s):  
Xiao Chen ◽  
Changlin Liu ◽  
Jinyang Ke ◽  
Jianguo Zhang ◽  
Xuewen Shu ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Nanometric Cutting

Effect of Ice Counterparts on the Friction Behavior of Single Crystal Silicon Wafer

2008 ◽  
Vol 53-54 ◽  
pp. 167-172 ◽  
Author(s):  
Yu Li Sun ◽  
Dun Wen Zuo ◽  
Yong Wei Zhu ◽  
Ming Wang ◽  
H.Y. Wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Friction Coefficient ◽  
Single Crystal ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Alkaline Condition ◽  
Friction Behavior ◽  
Crystal Silicon ◽  
Single Crystal Silicon Wafer ◽  
Α Al2o3

The friction behavior of single silicon wafer sliding against different ice counterparts (α-Al2O3, CeO2 and SiO2) at 10±0.5 °C within a velocity of 60 rpm~300 rpm were studied using a home-made friction and wear testing machine. The morphologies and surfaces roughness of the worn silicon wafers were observed and examined on a non-contact surface topography instrument (ADE). It was found that the friction coefficient of the single silicon wafer decreased with the increase of sliding velocity. Single crystal silicon wafer coupled with α-Al2O3 ice counterpart recorded the highest friction coefficient and the biggest surface roughness, while it had the lowest friction coefficient and the smallest surface roughness as with CeO2 ice counterpart. One reason was that a series of tribochemical reactions occurred at the local contact point between the ice counterpart and the silicon wafer during sliding. Under alkaline condition, there would be a soft corrosion layer formed on the surface of the silicon wafer. Another reason was that the hardness of the abrasive particles was different and this caused different cutting depth of them.

Research on Nano-Cutting Processes Based on Parallel Molecular Dynamics

2006 ◽  
Vol 532-533 ◽  
pp. 357-360
Author(s):  
Ying Chun Liang ◽  
De Gang Li ◽  
Qing Shun Bai ◽  
Yu Lan Tang
Keyword(s):  
Molecular Dynamics ◽  
Potential Energy ◽  
Single Crystal ◽  
Cutting Forces ◽  
Single Crystal Silicon ◽  
Rake Angle ◽  
Tool Geometry ◽  
Crystal Silicon ◽  
Parallel Molecular Dynamics ◽  
Cutting Processes

To investigate the effect of tool geometry on single-crystal silicon nano-cutting, parallel molecular dynamics (MD) simulations are carried out with different tool rake angles. In this study, a parallel arithmetic based on mechanism of spatial decomposition together with MD is applied to simulate nano-cutting processes of single-crystal silicon (100) plane by using a single-crystal diamond tool. The simulation results show that tool rake angle has great effects on cutting forces and subsurface stress, and the effect of tool rake angle variation on work-piece potential energy is not evident while cutting single-crystal Silicon (100) plane. Moreover, the analysis of cutting forces and potential energy show that there is not evident dislocation in the nano-cutting.

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