Direct Plan View FIB Liftout for Near-Surface Defect Analysis in TEM

2013 ◽  
Author(s):  
Max L. Lifson ◽  
Carla M. Chapman ◽  
D. Philip Pokrinchak ◽  
Phyllis J. Campbell ◽  
Greg S. Chrisman ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Germanium ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Misfit Dislocations ◽  
Tem Analysis ◽  
Plan View ◽  
Near Surface ◽  
Straightforward Method

Abstract Plan view TEM imaging is a powerful technique for failure analysis and semiconductor process characterization. Sample preparation for near-surface defects requires additional care, as the surface of the sample needs to be protected to avoid unintentionally induced damage. This paper demonstrates a straightforward method to create plan view samples in a dual beam focused ion beam (FIB) for TEM studies of near-surface defects, such as misfit dislocations in heteroepitaxial growths. Results show that misfit dislocations are easily imaged in bright-field TEM and STEM for silicon-germanium epitaxial growth. Since FIB tools are ubiquitous in semiconductor failure analysis labs today, the plan view method presented provides a quick to implement, fast, consistent, and straightforward method of generating samples for TEM analysis. While this technique has been optimized for near-surface defects, it can be used with any application requiring plan view TEM analysis.

Comparison of Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis

1997 ◽  
Vol 3 (S2) ◽  
pp. 357-358
Author(s):  
C. Amy Hunt
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mechanical Polishing ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Tem Analysis ◽  
The Past ◽  
Preparation Techniques

The demand for TEM analysis in semiconductor failure analysis is rising sharply due to the shrinking size of devices. A well-prepared sample is a necessity for getting meaningful results. In the past decades, a significant amount of effort has been invested in improving sample preparation techniques for TEM specimens, especially precision cross-sectioning techniques. The most common methods of preparation are mechanical dimpling & ion milling, focused ion beam milling (FIBXTEM), and wedge mechanical polishing. Each precision XTEM technique has important advantages and limitations that must be considered for each sample.The concept for both dimpling & ion milling and wedge specimen preparation techniques is similar. Both techniques utilize mechanical polishing to remove the majority of the unwanted material, followed by ion milling to assist in final polishing or cleaning. Dimpling & ion milling produces the highest quality samples and is a relatively easy technique to master.

TEM FIB Lift-Out of Mount Saint Helens Volcanic Ash

1999 ◽  
Vol 5 (S2) ◽  
pp. 908-909
Author(s):  
J.L. Drown-MacDonald ◽  
B.I. Prenitzer ◽  
T.L. Shofner ◽  
L.A. Giannuzzi
Keyword(s):  
Cross Sections ◽  
Volcanic Ash ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron ◽  
Silver Paint

Focused Ion Beam (FIB) specimen preparation for both scanning and transmission electron microscopy (SEM and TEM respectively) has seen an increase in usage over the past few years. The advantage to the FIB is that site specific cross sections (or plan view sections) may be fabricated quickly and reproducibly from numerous types of materials using a finely focused beam of Ga+ ions [1,2]. It was demonstrated by Prenitzer et al. that TEM specimens may be acquired from individual Zn powder particles by employing the FIB LO specimen preparation technique [3]. In this paper, we use the FIB LO technique to prepare TEM specimens from Mount Saint Helens volcanic ash.Volcanic ash from Mount Saint Helens was obtained at the Microscopy and Microanalysis 1998 meeting in Atlanta. TEM analysis of the ash was performed using the FIB lift out technique [1]. Ash powders were dusted onto an SEM sample stud that had been coated with silver paint.

Magnetic Head Shorting Failure Analysis

2017 ◽  
Author(s):  
Liang Hong ◽  
Jia Li ◽  
Haifeng Wang
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Resistance Change ◽  
Root Cause ◽  
Transmission Electron ◽  
Root Cause Failure Analysis ◽  
Metal Layers

Abstract This paper provides an innovative root cause failure analysis method that combines multiple failure analysis (FA) techniques to narrow down and expose the shorting location and allow the material analysis of the shorting defect. It begins with a basic electrical testing to narrow down shorting metal layers, then utilizing mechanical lapping to expose over coat layers. This is followed by optical beam induced resistance change imaging to further narrow down the shorting location. Scanning electron microscopy and optical imaging are used together with focused ion beam milling to slice and view through the potential shorting area until the shorting defect is exposed. Finally, transmission electron microscopy (TEM) sample is prepared, and TEM analysis is carried out to pin point the root cause of the shorting. This method has been demonstrated successfully on Western Digital inter-metal layers shorting FA.

Characterization of Si, SiGe and SOI Structures Using Photoluminescence

1999 ◽  
Vol 588 ◽  
Author(s):  
V. Higgs
Keyword(s):  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Surface Region ◽  
Misfit Dislocations ◽  
Near Surface ◽  
Pl Mapping ◽  
Excitation Laser ◽  
Pl Intensity ◽  
P Type

AbstractA new Photoluminescence (PL) method has been developed to detect defects in the near surface region of Si wafers and Si-on-insulator (SOI) structures. Wafer maps (up to 300 min diameter) can be readily acquired and areas of interest can be scanned at high resolution (≈1 μm). The excitation laser beam is modulated to confine the photogenerated carriers; defects are observed due to the localised reduction of the carrier lifetime. Si p-type (10 Ohm.cm) wafers were intentionally contaminated with various levels of Ni and Fe (1×109−5×1010 atoms/cm2) and annealed. The PL intensity was observed to decrease due to the metal related non-radiative defects. Whereas in contrast, for Cu, (1×109−5×1010 atoms/cm2) the PL intensity actually increased initially and reached a maximum value at 5×109 atoms/cm2. It is suggested that during contamination the Cu related defects have complexed with existing defects (that have stronger recombination properties) and increased the PL. Further Cu contamination (1×1010−5×1010 atoms/cm2) produced a reduction in the PL intensity. PL mapping of strained SiGe epilayers showed that misfit dislocations can be detected and PL can be used to evaluate material quality.PL maps of SOI bonded wafers revealed that the non-bonded areas, voids or gas bubbles could be detected. This was confirmed using defect etching and polishing, voids as small as ≈30 μm in diameter could be detected. SOI wafers fabricated using the separation by implanted oxygen (SIMOX) technique were also analysed, variations in the recombination properties of the layer could be observed. Further inspection using transmission electron microscopy (TEM) revealed that the defects were non-uniformities of the buried oxide covering several microns and containing tetrahedral stacking faults. Focused ion beam (FIB) milling and secondary ion mass spectrometry (SIMS) showed that these defects were at the Si/SiO2 interface and were chemically different to the surrounding area.

scholarly journals Die Backside FIB Preparation for Identification and Characterization of Metal Voids

1999 ◽  
Author(s):  
Ann N. Campbell ◽  
William F. Filter ◽  
Nicholas Antoniou
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Cross Sections ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Milling Process ◽  
Plan View ◽  
Metal Interconnects

Abstract Both the increased complexity of integrated circuits, resulting in six or more levels of integration, and the increasing use of flip-chip packaging have driven the development of integrated circuit (IC) failure analysis tools that can be applied to the backside of the chip. Among these new approaches are focused ion beam (FIB) tools and processes for performing chip edits/repairs from the die backside. This paper describes the use of backside FIB for a failure analysis application rather than for chip repair. Specifically, we used FIB technology to prepare an IC for inspection of voided metal interconnects (“lines”) and vias. Conventional FIB milling was combined with a superenhanced gas assisted milling process that uses XeF2 for rapid removal of large volumes of bulk silicon. This combined approach allowed removal of the TiW underlayer from a large number of M1 lines simultaneously, enabling rapid localization and plan view imaging of voids in lines and vias with backscattered electron (BSE) imaging in a scanning electron microscope (SEM). Sequential cross sections of individual voided vias enabled us to develop a 3D reconstruction of these voids. This information clarified how the voids were formed, helping us identify the IC process steps that needed to be changed.

scholarly journals Automated Cell Layer Counting and Marking at Target Layer of 3D NAND TEM Samples by Focused Ion Beam

2021 ◽  
Author(s):  
Jisu Ryu ◽  
Seojin Kim ◽  
Christopher H. Kang ◽  
Jaeheum Baek
Keyword(s):  
Sample Preparation ◽  
Target Cell ◽  
Flash Memory ◽  
Focused Ion Beam ◽  
Cell Layer ◽  
Ion Beam ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Tem Analysis ◽  
Plan View

Abstract The plan-view TEM analysis has been used for 3D NAND flash memory to analyze metrology and chemical of channel holes. Focused Ion Beam (FIB) is one of the most powerful techniques for precise location sampling in nanometer-scale for Transmission Electron Microscope (TEM) sample preparation. As semiconductor technology improves continuously, 3D NAND is requiring higher stacks to increasing the capacity of storage. In general, an operator counts the cell layer manually to reach the desire layer on TEM sample before thinning. It is not easy way to make TEM samples at the exact desired layer. To make it easier, automatic cell layer counting workflow is introduced in this paper. This progress is carried out until the desired target cell is reached. Furthermore, marking is performed on the target cell layer. This automation recipe is able to offer simple process to count the desired cell layer without manual action and make TEM sample preparation easily.

A Tutorial of the Fib Lift-Out Technique for TEM Specimen Preparation

1999 ◽  
Vol 5 (S2) ◽  
pp. 516-517
Author(s):  
Lucille A. Giannuzzi
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Subsequent Development ◽  
Bulk Sample ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Plan View ◽  
Area Of Interest ◽  
Wide Range

The focused ion beam (FIB) instrument has been developed and exploited by the microelectronics arena for specimen preparation for both scanning and transmission electron microscopy (TEM). The inception [1] and subsequent development [2] of the FIB TEM lift-out (LO) technique has enabled electron transparent membranes of generally uniform thickness to be produced for TEM analysis. The primary advantage of the FIB technique is that site specific cross sections (or plan view sections [3]) may be fabricated quickly and reproducibly. The FIB LO technique has been used extensively in our laboratory for a wide range of materials [4] and biological applications [5] which are summarized in figure 1.The FIB LO method consists of milling a series of trenches around an area of interest. Then the bulk sample is tilted up to ∼60 degrees to allow the beam to impinge on the lower portion of the specimen surface so that cuts can be made along the bottom edge and the lower 2/3 of the distance up one side of the specimen.

Revisiting the FIB TEM Lift-Out Specimen Preparation Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 508-509
Author(s):  
L. A. Giannuzzi ◽  
F. A. Stevie
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Subsequent Development ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Tem Analysis ◽  
Plan View ◽  
Geological Materials ◽  
Transmission Electron ◽  
Primary Advantage

In recent years, the focused ion beam (FIB) instrument has developed into a mainstay tool for the production of specimens for both scanning and transmission electron microscopy ((S)TEM). The inception and subsequent development of the FIB TEM lift-out (LO) technique has enabled electron transparent membranes of generally uniform thickness to be produced for TEM analysis. In general, the primary advantage of the FIB is that site specific sections may be fabricated quickly (e.g., < 1 hour) and reproducibly. Specifically, the FIB LO technique has been used extensively in our laboratories to produce on the order of a thousand Si-based specimens per year and hundreds of other specimens per year that have included metals, ceramics, composites, biological materials, geological materials, polymers, particles, and fibers, prepared in cross-section, plan view, and from fracture surfaces.

A High Resolution TEM Specimen Thinning System

1991 ◽  
Vol 254 ◽  
Author(s):  
R. Clampitt ◽  
G. G. Ross ◽  
M. Phelan ◽  
S. A. Davies
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Spatial Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Commercial System ◽  
High Resolution Tem

AbstractImprovements in specimen preparation for TEM analysis are being constantly sought, particularly in the study of microelectronics' materials and in failure analysis of devices. We describe here a compact commercial system capable of thinning (milling) selected regions of a specimen by means of a scanned focused ion beam of sub-micron spatial resolution.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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