Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps

2019 ◽  
Author(s):  
Nisha Chugh ◽  
Manoj Kumar ◽  
Monika Bhattacharya ◽  
R. S. Gupta
Keyword(s):  
Carrier Concentration ◽  
Double Heterostructure ◽  
Current Voltage

Temperature Variation Effects on Current-Voltage (i-v) Characteristics of n-GaN Schottky Diode

2006 ◽  
Vol 517 ◽  
pp. 141-146
Author(s):  
Tarriq Munir ◽  
Azlan Abdul Aziz ◽  
Mat Johar Abdullah ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Temperature Variation ◽  
Schottky Diode ◽  
Reverse Bias ◽  
Pt Electrode ◽  
Turn On ◽  
Bandgap Narrowing ◽  
Current Voltage ◽  
Higher Temperature

We focus in this paper the temperature variation effects on the current – voltage ( I-V) characteristics of n-GaN schottky diode. The diode was doped with carrier concentration 1*1013cm-3 and Pt electrode was used. The simulated current were obtained at temperatures from 50K to 500K and voltage up to 2Volt. We use the Srh (Schokley read hall), Cvt (Lombardi Model), Auger (Auger), Fermi (Fermi Dirac), Impact, Bgn (Bandgap Narrowing), Complete ioniz model to get the schottky rectifying current – voltage (I-V) characteristics.. We find that by increasing the temperature from 50K to 500K, the forward schottky rectifying current decreases from 2.7187 Amp to 0.383 Amp. while the forward turn – on voltage decreases. In reverse bias at low temperature the current is high and we increase the temperature the current decreases. The breakdown voltage decreases at higher temperature.

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

1997 ◽  
Vol 468 ◽  
Author(s):  
K. Yang ◽  
H. T. Shi ◽  
B. Shen ◽  
R. Zhang ◽  
Z. Z. Chen ◽  
...  
Keyword(s):  
Blue Light ◽  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Optical Emission ◽  
Emission Peak ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Current Voltage ◽  
Carrier Tunneling

ABSTRACTIn this paper, we studied the electrical and optical characteristics of Nichia double heterostructure blue light-emitting diodes, with In0.06Ga0.94N:Zn, Si active layer, at 77 and 300 K. Measurement of the forward bias current-voltage behavior of the device demonstrates a departure from the Shockley model of p-n diodes, and it is observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunneling. Electroluminescence experiments of the devices were performed. We obtained an emission peak located at 2.80 eV, and a relatively weaker short-wavelength peak of 3.2 eV. A significant blue shifts of the optical emission peak which is consistent with the tunneling character of electrical characteristics was observed. Furthermore, we studied the properties of electroluminescence under various pulsed currents, and a degradation in I-V characteristics and a low resistance ohmic short were observed.

THE STUDY ON THE ELECTRIC FIELD EFFECT IN THE La0.8Ca0.2MnO3/PbZr0.2Ti0.8O3/Si HETEROSTRUCTURE

2007 ◽  
Vol 14 (04) ◽  
pp. 617-621
Author(s):  
ZHANG WEI WEI ◽  
WANG LI FENG ◽  
ZHOU YU QING ◽  
ZHU MING
Keyword(s):  
Electric Field ◽  
Carrier Concentration ◽  
Gate Voltage ◽  
Field Effect ◽  
Electric Field Effect ◽  
Current Voltage ◽  
Wide Range ◽  
Effective Mobility ◽  
Effect Theory ◽  
Different Temperatures

A detailed quantitative investigation of the current–voltage (I–V) relationship under the low and the high electric field in the La 0.8 Ca 0.2 MnO 3/ PbZr 0.2 Ti 0.8 O 3/ Si heterostructure over a wide range of temperature was performed. The effective mobility and carrier concentration were then calculated through the electric field effect theory. The differential mobility can be modulated and enhanced significantly by the gate voltage in the vicinity of the metal–insulator-transition temperature. The carrier concentration is proportional to the applied gate voltage. At the room temperature the carrier concentration is found to be 2.5 × 10-9 under 10 V bias and remains almost unchanged at different temperatures.

Current–voltage relations for the dual channel double heterostructure optoelectronic switch

2003 ◽  
Vol 94 (3) ◽  
pp. 1709-1720 ◽  
Author(s):  
H. Opper ◽  
G. W. Taylor
Keyword(s):  
Double Heterostructure ◽  
Dual Channel ◽  
Current Voltage ◽  
Optoelectronic Switch
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