Analysis of thickness-shear and thickness-twist modes of AT-cut quartz acoustic wave resonator and filter

Poly N-(2-cyanoethyl)pyrrole films have been synthesized by electrochemical polymerization and characterized by cyclic voltammetry, scanning electron microscopy, and X-ray photoelectron spectroscopy. Polymeric coatings prepared on the surface of a thickness-shear-mode acoustic wave sensor have been used to examine response selectivity to a number of gas-phase probe molecules. The responses of the poly N-(2-cyanoethyl)pyrrole based sensor are compared with the parent polypyrrole device and rationalized in terms of the molecular interactions between probes and polymer films. The polar cyano functionality enhances interactions with analytes such as acetonitrile. Keywords: gas sensor, thickness-shear-mode acoustic wave sensor, poly N-(2-cyanoethyl)pyrrole film, polypyrrole film, conducting polymer.

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The thin film bulk acoustic wave resonator based on single-crystalline 43○Y-cut lithium niobate thin films

AIP Advances ◽

10.1063/1.5143550 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075002

Author(s):

Xiaoyuan Bai ◽

Yao Shuai ◽

Lu Lv ◽

Ying Xing ◽

Jiaoling Zhao ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Lithium Niobate ◽

Acoustic Wave ◽

Bulk Acoustic Wave ◽

Single Crystalline ◽

Bulk Acoustic Wave Resonator ◽

Wave Resonator ◽

Film Bulk

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Simulation and fabrication of thin film bulk acoustic wave resonator

Journal of Semiconductors ◽

10.1088/1674-4926/37/7/074009 ◽

2016 ◽

Vol 37 (7) ◽

pp. 074009

Author(s):

Xixi Han ◽

Yi Ou ◽

Zhigang Li ◽

Wen Ou ◽

Dapeng Chen ◽

...

Keyword(s):

Thin Film ◽

Acoustic Wave ◽

Bulk Acoustic Wave ◽

Bulk Acoustic Wave Resonator ◽

Wave Resonator ◽

Film Bulk

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2-D modeling of laterally acoustically coupled thin film bulk acoustic wave resonator filters

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control ◽

10.1109/tuffc.2010.1720 ◽

2010 ◽

Vol 57 (11) ◽

pp. 2537-2549 ◽

Cited By ~ 8

Author(s):

Tuomas Pensala ◽

Johanna Meltaus ◽

Kimmo Kokkonen ◽

Markku Ylilammi

Keyword(s):

Thin Film ◽

Acoustic Wave ◽

Bulk Acoustic Wave ◽

Bulk Acoustic Wave Resonator ◽

Wave Resonator ◽

Film Bulk ◽

Resonator Filters

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Acoustic wave flow sensor using quartz thickness shear mode resonator

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control ◽

10.1109/tuffc.2009.1270 ◽

2009 ◽

Vol 56 (9) ◽

pp. 1945-1954 ◽

Cited By ~ 7

Author(s):

Lifeng Qin ◽

Zijing Zeng ◽

Hongbin Cheng ◽

Qing-ming Wang

Keyword(s):

Acoustic Wave ◽

Flow Sensor ◽

Wave Flow ◽

Shear Mode ◽

Thickness Shear Mode ◽

Thickness Shear ◽

Mode Resonator

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Surface acoustic wave resonator from thick MOVPE-grown layers of GaN(0001) on sapphire

MRS Proceedings ◽

10.1557/proc-743-l6.37 ◽

2002 ◽

Vol 743 ◽

Cited By ~ 4

Author(s):

Sverre V. Pettersen ◽

Thomas Tybell ◽

Arne Rønnekleiv ◽

Stig Rooth ◽

Veit Schwegler ◽

...

Keyword(s):

Acoustic Wave ◽

Surface Acoustic Wave ◽

Electromechanical Coupling ◽

Film Surface ◽

Center Frequency ◽

Electromechanical Coupling Coefficient ◽

Nitride Film ◽

Wave Resonator ◽

Lift Off ◽

Definition Of

ABSTRACTWe report on fabrication and measurement of a surface acoustic wave resonator prepared on ∼10m thick GaN(0001) films. The films were grown by metal-organic vapor phase epitaxy on a c-plane sapphire substrate. The surface morphology of the films were examined with scanning electron and atomic force microscopy. A metallic bilayer of Al/Ti was subsequently evaporated on the nitride film surface. Definition of the resonator interdigital transducers, designed for a wavelength of λ=7.76m, was accomplished with standard UV lithography and lift-off. S-parameter measurements showed a resonator center frequency f0=495MHz at room temperature, corresponding to a surface acoustic wave velocity of 3844m/s. The insertion loss at center frequency was measured at 8.2dB, and the loaded Q-factor was estimated at 2200. Finally, measurements of the resonator center frequency for temperatures in the range 25–155°C showed a temperature coefficient of -18ppm/°C. The intrinsic GaN SAW velocity and electromechanical coupling coefficient were estimated at νSAW=383 1m/s and K2=1.8±0.4·10−3.

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