Effects of preferred orientation on the piezoelectric properties of Pt/Pb(Zr0.3Ti0.7)O3/Pt thin films grown by sol–gel process

We fabricated the crystallized InGaZnO thin films by sol-gel process and high-temperature annealing at 900°C. Prior to the deposition of the InGaZnO, ZnO buffer layers were also coated by sol-gel process, which was followed by thermal annealing. After the synthesis and annealing of the InGaZnO, the InGaZnO thin film on the ZnO buffer layer with preferred orientation showed periodic diffraction patterns in the X-ray diffraction, resulting in a superlattice structure. This film consisted of nanosized grains with two phases of InGaO3(ZnO)1and InGaO3(ZnO)2in InGaZnO polycrystal. On the other hand, the use of no ZnO buffer layer and randomly oriented ZnO buffer induced the absence of the InGaZnO crystal related patterns. This indicated that the ZnO buffer with highc-axis preferred orientation reduced the critical temperature for the crystallization of the layered InGaZnO. The InGaZnO thin films formed with nanosized grains of two-phase InGaO3(ZnO)msuperlattice showed considerably low thermal conductivity (1.14 Wm−1 K−1at 325 K) due to the phonon scattering from grain boundaries as well as interfaces in the superlattice grain.

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The crystallization of thin-film ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100122095 ◽

1992 ◽

Vol 50 (1) ◽

pp. 338-339

Author(s):

J.M. Schwartz ◽

L.F. Francis ◽

L.D. Schmidt ◽

P.S. Schabes-Retchkiman

Keyword(s):

Thin Films ◽

Grain Size ◽

Sol Gel ◽

Processing Route ◽

Small Areas ◽

Ceramic Thin Films ◽

Complex Shapes ◽

Sol Gel Process ◽

Ceramic Precursors ◽

Crystalline Ceramic

Ceramic thin films and coatings are of interest for electrical, optical, magnetic and thermal barrier applications. Critical for improved properties in thin films is the development of specific microstructures during processing. To this end, the sol-gel method is advantageous as a versatile processing route. The sol-gel process involves depositing a solution containing metalorganic or colloidal ceramic precursors onto a substrate and heating the deposited layer to form a crystalline or non-crystalline ceramic coating. This route has several advantages, including the ability to create tailored microstructures and properties, to coat large or small areas, simple or complex shapes, and to more easily prepare multicomponent ceramics. Sol-gel derived coatings are amorphous in the as-deposited state and develop their crystalline structure and microstructure during heat-treatment. We are particularly interested in studying the amorphous to crystalline transformation, because many key features of the microstructure such as grain size and grain size distribution may be linked to this transformation.

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Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

MRS Proceedings ◽

10.1557/proc-606-181 ◽

1999 ◽

Vol 606 ◽

Cited By ~ 2

Author(s):

Keishi Nishio ◽

Jirawat Thongrueng ◽

Yuichi Watanabe ◽

Toshio Tsuchiya

Keyword(s):

Thin Film ◽

Thin Films ◽

Epitaxial Growth ◽

Raw Materials ◽

Substrate Surface ◽

Sol Gel ◽

Tungsten Bronze ◽

Monomethyl Ether ◽

Tetragonal Tungsten Bronze ◽

Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

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Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.501.236 ◽

2012 ◽

Vol 501 ◽

pp. 236-241 ◽

Cited By ~ 1

Author(s):

Ftema W. Aldbea ◽

Noor Bahyah Ibrahim ◽

Mustafa Hj. Abdullah ◽

Ramadan E. Shaiboub

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Room Temperature ◽

Annealing Temperature ◽

Sol Gel ◽

Vibrating Sample Magnetometer ◽

X Ray ◽

Garnet Phase ◽

Sol Gel Process ◽

Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

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