Structural, optical and photoluminescence properties of hybrid metal–organic halide perovskite thin films prepared by a single step solution method

2018 ◽  
Vol 29 (18) ◽  
pp. 15404-15410 ◽  
Author(s):  
Isaac Montes-Valenzuela ◽  
Francisco Pérez-Sánchez ◽  
Arturo Morales-Acevedo
2018 ◽  
Vol 192 ◽  
pp. 01031
Author(s):  
Satoru Seto ◽  
Rintaro Shimizu ◽  
Makoto Tokuda

We report on metal-organic halide perovskite CH3NH3PbI3 films converted from PbI2 precursors for planar heterojunction perovskite solar cells. PbI2 films as a precursor were deposited by hot-wall method and conventional vacuum evaporation. The conversion to perovskite phase from the PbI2 films were performed by annealing in methyl ammonium iodine (MAI) vapour at 120-150 °C. We confirmed that no residual PbI2 phase can be detected in the converted perovskite films by x-ray diffraction measurements. The surface morphology of the perovskite films was measured by AFM. Roughness Ra of the films is 17.8 nm, which is comparable value to the reported ones. Using the converted perovskite films we fabricated tentative perovskite solar cells with a device architecture of ITO/PEDOT:PSS/Perovskite/C60/Ag. The power conversion efficiencies of the fabricated solar cells from a conventional evaporation and the hot-wall method exhibited 2.22 and 2.33%, respectively.


Nanoscale ◽  
2014 ◽  
Vol 6 (16) ◽  
pp. 9640-9645 ◽  
Author(s):  
Yanyan Chen ◽  
Shenjie Li ◽  
Lijian Huang ◽  
Daocheng Pan

Luminescent Cu-doped ZnxCd1−xS quantum dot thin films have been directly fabricated via a facile solution method in open air.


2019 ◽  
Vol 31 (17) ◽  
pp. 6824-6832 ◽  
Author(s):  
Harshita Bhatia ◽  
Julian A. Steele ◽  
Cristina Martin ◽  
Masoumeh Keshavarz ◽  
Guillermo Solis-Fernandez ◽  
...  

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21824-21833 ◽  
Author(s):  
Jyoti V. Patil ◽  
Sawanta S. Mali ◽  
Chang Kook Hong

Controlling the grain size of the organic–inorganic perovskite thin films using thiourea additives now crossing 2 μm size with >20% power conversion efficiency.


1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).


Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1552 ◽  
Author(s):  
Weber ◽  
Graniel ◽  
Balme ◽  
Miele ◽  
Bechelany

Improving the selectivity of gas sensors is crucial for their further development. One effective route to enhance this key property of sensors is the use of selective nanomembrane materials. This work aims to present how metal-organic frameworks (MOFs) and thin films prepared by atomic layer deposition (ALD) can be applied as nanomembranes to separate different gases, and hence improve the selectivity of gas sensing devices. First, the fundamentals of the mechanisms and configuration of gas sensors will be given. A selected list of studies will then be presented to illustrate how MOFs and ALD materials can be implemented as nanomembranes and how they can be implemented to improve the operational performance of gas sensing devices. This review comprehensively shows the benefits of these novel selective nanomaterials and opens prospects for the sensing community.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chokkakula L. P. Pavithra ◽  
Reddy Kunda Siri Kiran Janardhana ◽  
Kolan Madhav Reddy ◽  
Chandrasekhar Murapaka ◽  
Joydip Joardar ◽  
...  

AbstractDiscovery of advanced soft-magnetic high entropy alloy (HEA) thin films are highly pursued to obtain unidentified functional materials. The figure of merit in current nanocrystalline HEA thin films relies in integration of a simple single-step electrochemical approach with a complex HEA system containing multiple elements with dissimilar crystal structures and large variation of melting points. A new family of Cobalt–Copper–Iron–Nickel–Zinc (Co–Cu–Fe–Ni–Zn) HEA thin films are prepared through pulse electrodeposition in aqueous medium, hosts nanocrystalline features in the range of ~ 5–20 nm having FCC and BCC dual phases. The fabricated Co–Cu–Fe–Ni–Zn HEA thin films exhibited high saturation magnetization value of ~ 82 emu/g, relatively low coercivity value of 19.5 Oe and remanent magnetization of 1.17%. Irrespective of the alloying of diamagnetic Zn and Cu with ferromagnetic Fe, Co, Ni elements, the HEA thin film has resulted in relatively high saturation magnetization which can provide useful insights for its potential unexplored applications.


Sign in / Sign up

Export Citation Format

Share Document