Effect of hydrogenated silicon film microstructure on the surface states of n-type silicon nanowires and solar cells

2021 ◽  
Author(s):  
Ping Yang ◽  
Xiangbo Zeng
Keyword(s):  
Solar Cells ◽  
Silicon Nanowires ◽  
Silicon Film ◽  
Surface States ◽  
Hydrogenated Silicon ◽  
Type Silicon ◽  
Film Microstructure

Resistivity and surface states density of n- and p-type silicon nanowires

2008 ◽  
Vol 26 (3) ◽  
pp. 945 ◽  
Author(s):  
F. Vaurette ◽  
J. P. Nys ◽  
D. Deresmes ◽  
B. Grandidier ◽  
D. Stiévenard
Keyword(s):  
Silicon Nanowires ◽  
Surface States ◽  
Type Silicon ◽  
P Type

The influence of surface states on open-circuit voltage for Cr, p-type silicon MIS solar cells

1977 ◽  
Author(s):  
W.A. Anderson ◽  
J.K. Kim ◽  
A.E. Delahoy ◽  
C. Cartier
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Surface States ◽  
Open Circuit ◽  
Type Silicon ◽  
P Type

Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modeling

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-181-Pr8-188 ◽  
Author(s):  
A. Dollet ◽  
B. Caussat ◽  
J. P. Couderc
Keyword(s):  
Numerical Modeling ◽  
Silicon Film ◽  
Operating Conditions ◽  
Film Microstructure

Kinetics of Light-Induced Effects in Mixed-Phase Hydrogenated Silicon Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Guozhen Yuea ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Equivalent Circuit Model ◽  
Open Circuit ◽  
Mixed Phase ◽  
Silicon Solar Cells ◽  
Initial Increase ◽  
Soaking Time ◽  
Hydrogenated Silicon ◽  
Kinetics Of

AbstractWe have observed a significant light-induced increase in the open-circuit voltage (Voc) of mixed-phase hydrogenated silicon solar cells. In this study, we investigate the kinetics of the light-induced effects. The results show that the cells with different initial Voc have different kinetic behavior. For the cells with a low initial Voc (less than 0.8 V), the increase in Voc is slow and does not saturate for light-soaking time of up to 16 hours. For the cells with medium initial Voc (0.8 ∼ 0.95 V), the Voc increases rapidly and then saturates. Cells with high initial Voc (0.95 ∼ 0.98 V) show an initial increase in Voc, followed bya Voc decrease. All light-soaked cells exhibit a degradation in fill factor. The temperature dependence of the kinetics shows that light soaking at high temperatures causes Voc increase to saturate faster than at low temperatures. The observed results can be explained by our recently proposed two-diode equivalent-circuit model for mixed-phase solar cells.

P‐Type Silicon Solar Cells with Passivating Rear Contact Formed by LPCVD p + Polysilicon and Screen Printed Ag Metallization

2019 ◽  
Vol 13 (7) ◽  
pp. 1900064 ◽  
Author(s):  
Sebastian Mack ◽  
Martijn Lenes ◽  
Jan‐Marc Luchies ◽  
Andreas Wolf
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Type Silicon ◽  
P Type ◽  
Screen Printed

Solution Processed Organic/Silicon Nanowires Hybrid Heterojunction Solar Cells Using Organosilane Incorporated Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) as Hole Transport Layers

ACS Nano ◽  
2021 ◽  
Vol 15 (4) ◽  
pp. 6296-6304
Author(s):  
Rongzong Shen ◽  
Zongheng Sun ◽  
Yanbin Shi ◽  
Yurong Zhou ◽  
Wanwu Guo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nanowires ◽  
Hole Transport ◽  
Solution Processed ◽  
Heterojunction Solar Cells ◽  
Organic Silicon ◽  
Hole Transport Layers

scholarly journals High efficiency dye-sensitized solar cells with VOC–JSC trade off eradication by interfacial engineering of the photoanode|electrolyte interface

RSC Advances ◽  
2019 ◽  
Vol 9 (69) ◽  
pp. 40292-40300
Author(s):  
Anantharaj Gopalraman ◽  
Subbian Karuppuchamy ◽  
Saranyan Vijayaraghavan
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
High Efficiency ◽  
Dye Sensitized Solar Cells ◽  
Surface States ◽  
Trade Off ◽  
Interfacial Engineering ◽  
Dye Sensitized ◽  
Electrolyte Interface ◽  
Sensitized Solar Cells

VOC–JSC trade off is eliminated. Newly created surface states by OA in TiO2 facilitated the charge transfer kinetics.

Amorphous hydrogenated silicon-nitride films for applications in solar cells

Vacuum ◽  
2008 ◽  
Vol 82 (10) ◽  
pp. 942-946 ◽  
Author(s):  
B. Swatowska ◽  
T. Stapinski
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Hydrogenated Silicon ◽  
Silicon Nitride Films ◽  
Amorphous Hydrogenated Silicon

INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (27) ◽  
pp. 1739-1747 ◽  
Author(s):  
QINGSONG LEI ◽  
ZHIMENG WU ◽  
XINHUA GENG ◽  
YING ZHAO ◽  
JIANPING XI
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transition Region ◽  
Chemical Vapor ◽  
Transition Process ◽  
Very High Frequency ◽  
Working Pressure ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Narrow Region

Hydrogenated silicon thin films (Si:H) have been deposited by using very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD). The structural, electrical and optical properties of the films were characterized. The transition process and the effect of pressure were studied. Results suggest that a narrow region, in which the transition from microcrystalline to amorphous growth takes place, exists in the regime of silane concentration (SC). This region is influenced by the working pressure (P). At lower pressure, the transition region is shifted to higher SC. Microcrystalline silicon (μ c-Si:H ) thin films deposited near transition region was applied as i-layer to the p-i-n solar cells. An efficiency of about 5.30% was obtained.

scholarly journals Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter

2011 ◽  
Vol 8 ◽  
pp. 487-492 ◽  
Author(s):  
F. Book ◽  
T. Wiedenmann ◽  
G. Schubert ◽  
H. Plagwitz ◽  
G. Hahn
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Front Surface ◽  
Silicon Solar Cells ◽  
Large Area ◽  
Type Silicon
Sign in / Sign up

Export Citation Format

Share Document