Deposition of Cu and Al nanosized films in a vacuum by a laser method

2013 ◽  
Vol 86 (5) ◽  
pp. 1020-1026
Author(s):  
V. K. Goncharov ◽  
G. A. Gusakov ◽  
M. V. Puzyrev
Keyword(s):  
2006 ◽  
Vol 326-328 ◽  
pp. 187-190
Author(s):  
Jong Sun Kim ◽  
Chul Jin Hwang ◽  
Kyung Hwan Yoon

Recently, injection molded plastic optical products are widely used in many fields, because injection molding process has advantages of low cost and high productivity. However, there remains residual birefringence and residual stresses originated from flow history and differential cooling. The present study focused on developing a technique to measure the birefringence in transparent injection-molded optical plastic parts using two methods as follows: (i) the two colored laser method, (ii) the R-G-B separation method of white light. The main idea of both methods came from the fact that more information can be obtained from the distribution of retardation caused by different wavelengths. The comparison between two methods is demonstrated for the same sample of which retardation is up to 850 nm.


2011 ◽  
Vol 479 ◽  
pp. 54-61 ◽  
Author(s):  
Fei Wang ◽  
Ya Ping Wang

Microstructure evolution of high energy milled Al-50wt%Si alloy during heat treatment at different temperature was studied. Scanning electron microscope (SEM) and X-ray diffraction (XRD) results show that the size of the alloy powders decreased with increasing milling time. The observable coarsening of Si particles was not seen below 730°C in the high energy milled alloy, whereas, for the alloy prepared by mixed Al and Si powders, the grain growth occurred at 660°C. The activation energy for the grain growth of Si particles in the high energy milled alloy was determined as about 244 kJ/mol by the differential scanning calorimetry (DSC) data analysis. The size of Si particles in the hot pressed Al-50wt%Si alloy prepared by high energy milled powders was 5-30 m at 700°C, which was significantly reduced compared to that of the original Si powders. Thermal diffusivity of the hot pressed Al-50wt%Si alloy was 55 mm2/s at room temperature which was obtained by laser method.


Author(s):  
Laurentiu Rusen ◽  
Valentina Dinca ◽  
Cosmin Mustaciosu ◽  
Madalina Icriverzi ◽  
Livia Elena Sima ◽  
...  

2010 ◽  
Vol 24 (03) ◽  
pp. 257-269 ◽  
Author(s):  
MENGYAN SHEN

Pulsed laser-assisted etching is a simple but effective method for fabricating small regular structures directly onto a surface. We have successfully fabricated submicro- or nano-meter sized spikes on a solid surface immersed in liquids with femtosecond laser pulse irradiations. This method is applicable to different metals such as stainless steel, copper, titanium, cobalt, as well as different semiconductors, such as Si and GaAs. The femtosecond laser method is much faster than other methods. We can control the experimental conditions to design and fabricate nanostructures in different materials and on the surfaces with different morphologies. Here, we discuss the nanostructures formation with femtosecond pulse laser irradiations, and introduce our results of the nanostructure for applications in sensing, biology and artificial photosynthesis. The femtosecond laser irradiation technique can efficiently integrate metal, semiconductor and polymer nanostructures in various small devices to leverage the expertise in other research fields and applications.


2021 ◽  
Vol 19 (3) ◽  
pp. 69-77
Author(s):  
A.J. Noori ◽  
R.A. Ahmed ◽  
I.M. Ibrahim

Vanadium oxide V2O5 thin films with variation doping ratios of Sm2O5 (2, 4, 6, and 8 % wt.) on corn glass and p- type silicon substrates were prepared by pulsed laser method. The X-ray diffraction peaks for V2O5 decreases with doping ratio of Sm2O3. FESEM images for V2O5 and doped thin films illustrates clusters with a homogeneous distribution in nano scale. The energy gap varied upon the increment of doping concentration, starting from 2.610 eV to 2.7 eV. Gas sensor measurement of pure and doped V2O5 demonstrated a sensitivity to NO2 gas, and the sensitivity expanded upon the increment of operation temperature. The greatest sensitivity was found to be about 99%, while best response time of 10s and recovery time of 18s were recorded using the 4% Sm2O3 sample at 50 °C.


2021 ◽  
Vol 5 (1) ◽  
pp. 47-56
Author(s):  
Adeyemi Owolabi ◽  
Ali Haruna ◽  
Felix Ekwuribe ◽  
Raphael Ushiekpan Ugbe ◽  
Alexander Bulus Bature ◽  
...  

The discovery of Graphene and its unique properties has attracted great interest. Unfortunately, the synthesis of graphene in large scale is challenging, for this reason the derivative of graphene such as graphene oxide (GO) and reduce graphene oxide (rGO) have become alternative sources. The reduction of graphene oxide is an alternative route to obtain graphene-like behavior. This study is aim at examining the similarities and difference between thermal reduction technique and pulse laser method of reduction of (GO). The method utilizes a pulse laser beam for reduction of GO layers on glass substrates and thermal reduction technique. Using the pulse laser method, conductivity of reduced GO was found to be 2.325E-2(1/ohm) which is six times higher than conductivity values reported for GO layers reduced by thermal means at 400oC which was 3.740E-3(1/ohm). A higher transmittance was observed for the pulse laser annealed which holds promising application in a lot technological research. The scanning electron microscope (SEM) result reveals the evenly distribution of the GO around the substrate. The non-thermal nature of the pulse laser method combined with its simplicity and scalability, makes it very attractive for the future manufacturing of large-volume graphene-based optoelectronics


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