Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer

A backside-illuminated solar-blind UV detector based on an AlGaN p-i-n heterostructure has been successfully synthesized, fabricated and tested. The p-i-n photodiode structure consists of a 1.0 μm n-type Al0.64Ga0.36N:Si layer grown by MOVPE onto a low temperature AlN buffer layer on a polished sapphire substrate. On top of this base layer is a 0.2 μm undoped Al0.47Ga0.53N active layer and a 0.5 μm p-type Al0.47Ga0.53N:Mg top layer. Square mesas of area A = 4 × 10−4 cm2 were obtained by reactive ion etching using BCl3. The solar-blind photodiode exhibits a very narrow UV spectral responsivity band peaked at 273 nm with a FWHM = 21 nm. Maximum responsivity R = 0.051 A/W at 273 nm, corresponding to an internal quantum efficiency of 27%. R0A values up to 8 × 107Ω-cm2 were obtained, corresponding to D* = 3.5 × 1012 cm Hz1/2W−1 at 273 nm.

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Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer

MRS Proceedings ◽

10.1557/proc-831-e8.30 ◽

2004 ◽

Vol 831 ◽

Author(s):

Michinobu Tsuda ◽

Krishnan Balakrishnan ◽

Motoaki Iwaya ◽

Satoshi Kamiyama ◽

Hiroshi Amano ◽

...

Keyword(s):

Low Temperature ◽

Temperature Variation ◽

Buffer Layer ◽

Vapor Phase ◽

Sapphire Substrate ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Aln Buffer

ABSTRACTThe effect of H2-preannealing of sapphire substrate on low-temperature (LT- ) AlN buffer layer deposited by metalorganic vapor phase epitaxy is investigated. Crystallinity of LT-AlN drastically changes with preannealing temperature variation. It is found that H2-preannealing of sapphire substrate is a requisite to get a better quality LT-AlN and as a consequence it leads to growth of better quality GaN epi-layer on it.

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The influence of V/III ratio on GaN grown on patterned sapphire substrate with low temperature AlN buffer layer by hydride vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2018.07.014 ◽

2018 ◽

Vol 500 ◽

pp. 85-90 ◽

Cited By ~ 1

Author(s):

Nanliu Liu ◽

Qi Wang ◽

Xiaoping Zheng ◽

Shunfeng Li ◽

Yilmaz Dikme ◽

...

Keyword(s):

Low Temperature ◽

Buffer Layer ◽

Vapor Phase ◽

Sapphire Substrate ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy ◽

Patterned Sapphire Substrate ◽

Aln Buffer

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The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

Journal of Electronic Materials ◽

10.1007/s11664-015-4210-x ◽

2015 ◽

Vol 45 (2) ◽

pp. 859-866 ◽

Cited By ~ 3

Author(s):

Wei-Ching Huang ◽

Chung-Ming Chu ◽

Chi-Feng Hsieh ◽

Yuen-Yee Wong ◽

Kai-wei Chen ◽

...

Keyword(s):

Low Temperature ◽

Buffer Layer ◽

Material Properties ◽

Double Step ◽

Nucleation Layer ◽

Aln Buffer

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Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2012.08.117 ◽

2013 ◽

Vol 554 ◽

pp. 104-109 ◽

Cited By ~ 13

Author(s):

H. Xiong ◽

J.N. Dai ◽

Xiong Hui ◽

Y.Y. Fang ◽

W. Tian ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Buffer Layer ◽

Layer Thickness ◽

Sapphire Substrate ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Films ◽

Buffer Layer Thickness ◽

Aln Buffer

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Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

10.20944/preprints202107.0325.v1 ◽

2021 ◽

Author(s):

B. Riah ◽

Julien Camus ◽

Abdelhak Ayad ◽

Mohammad Rammal ◽

Raouia Zernadji ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Aluminum Nitride ◽

Magnetron Sputtering ◽

Epitaxial Growth ◽

Buffer Layer ◽

Molecular Beam ◽

Dc Magnetron Sputtering ◽

Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

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