Performance Analysis of a Charge Plasma Junctionless Nanotube Tunnel FET Including the Negative Capacitance Effect

2020 ◽  
Vol 49 (4) ◽  
pp. 2349-2357 ◽  
Author(s):  
Shruti Shreya ◽  
Naveen Kumar ◽  
Sunny Anand ◽  
Intekhab Amin
Keyword(s):  
Performance Analysis ◽  
Negative Capacitance ◽  
Charge Plasma ◽  
Tunnel Fet ◽  
Capacitance Effect ◽  
A Charge

Performance analysis of charge plasma based dual electrode tunnel FET

2016 ◽  
Vol 37 (5) ◽  
pp. 054003 ◽  
Author(s):  
Sunny Anand ◽  
S. Intekhab Amin ◽  
R. K. Sarin
Keyword(s):  
Performance Analysis ◽  
Charge Plasma ◽  
Tunnel Fet

scholarly journals Performance Analysis of Charge Plasma Induced Graded Channel Si Nanotube

2021 ◽  
Author(s):  
Ashima Ashima ◽  
◽  
Vaithiyanathan Dhandapani ◽  
Balwinder Raj ◽  
◽  
...  
Keyword(s):  
Performance Analysis ◽  
Ion Implantation ◽  
Film Thickness ◽  
Work Function ◽  
Silicon Film ◽  
Charge Plasma ◽  
The Core ◽  
Dc Characteristics ◽  
A Charge

This paper investigates a comparison based on DC and AC analysis of a charge plasma-based graded channel nanotube in two configurations. Nanotube structures offer enhanced gate ctontrol over other devices, they offer higher on-current than nanowires of equivalent silicon film thickness, making them a promising device, however, the core gate of nanotube results in higher gate leakages also. This paper draws a comparison of the two possible configurations of making a graded channel without ion implantation. The results show that a gate of higher work function in S-GC-NTFET is necessary to bring the same subthreshold characteristics as D-GC-NTFET. The D configuration shows slightly enhanced DC characteristics however, the RF analysis shows better results for S configuration.

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