A Charge Plasma-Based Monolayer Transition Metal Dichalcogenide Tunnel FET

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Brajesh Kumar Kaushik
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Vol 3 (1) ◽  
pp. 272-278
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Aline dos S. Almeida ◽  
Rodrigo M. Gerosa ◽  
Dario A. Bahamon ◽  
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The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.


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