scholarly journals Performance Analysis of Charge Plasma Induced Graded Channel Si Nanotube

2021 ◽  
Author(s):  
Ashima Ashima ◽  
◽  
Vaithiyanathan Dhandapani ◽  
Balwinder Raj ◽  
◽  
...  
Keyword(s):  
Performance Analysis ◽  
Ion Implantation ◽  
Film Thickness ◽  
Work Function ◽  
Silicon Film ◽  
Charge Plasma ◽  
The Core ◽  
Dc Characteristics ◽  
A Charge

This paper investigates a comparison based on DC and AC analysis of a charge plasma-based graded channel nanotube in two configurations. Nanotube structures offer enhanced gate ctontrol over other devices, they offer higher on-current than nanowires of equivalent silicon film thickness, making them a promising device, however, the core gate of nanotube results in higher gate leakages also. This paper draws a comparison of the two possible configurations of making a graded channel without ion implantation. The results show that a gate of higher work function in S-GC-NTFET is necessary to bring the same subthreshold characteristics as D-GC-NTFET. The D configuration shows slightly enhanced DC characteristics however, the RF analysis shows better results for S configuration.

Performance Analysis of Gate-Stack Dual-Material DG MOSFET Using Work-Function Modulation Technique for Lower Technology Nodes

Silicon ◽  
2021 ◽  
Author(s):  
Satish K. Das ◽  
Umakanta Nanda ◽  
Sudhansu M. Biswal ◽  
Chandan Kumar Pandey ◽  
Lalat Indu Giri
Keyword(s):  
Performance Analysis ◽  
Work Function ◽  
Gate Stack ◽  
Modulation Technique ◽  
Dg Mosfet ◽  
Technology Nodes ◽  
Dual Material

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$

2007 ◽  
Vol 28 (12) ◽  
pp. 1089-1091 ◽  
Author(s):  
R. Singanamalla ◽  
H. Y. Yu ◽  
B. Van Daele ◽  
S. Kubicek ◽  
K. De Meyer
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Aluminum Ion

Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control

2002 ◽  
Vol 716 ◽  
Author(s):  
Takaaki Amada ◽  
Nobuhide Maeda ◽  
Kentaro Shibahara
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Nitrogen Concentration ◽  
Implantation Dose ◽  
Control Technique ◽  
High Dose ◽  
Implantation Energy ◽  
20 Nm ◽  
Large Work ◽  
Gate Work Function

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

Performance Analysis of a Nonrecessed Hybrid Conical Journal Bearing Compensated With Capillary Restrictors

2015 ◽  
Vol 138 (1) ◽  
Author(s):  
Prashant G. Khakse ◽  
Vikas M. Phalle ◽  
S. S. Mantha
Keyword(s):  
Performance Analysis ◽  
Film Thickness ◽  
Journal Bearing ◽  
Fluid Film ◽  
Load Parameter ◽  
Radial Load ◽  
Wide Range ◽  
Bearing Stiffness ◽  
Fluid Film Thickness ◽  
Film Stiffness

The present paper deals with the performance analysis of a nonrecessed hole-entry hydrostatic/hybrid conical journal bearing with capillary restrictors. Finite element method has been used for solving the modified Reynolds equation governing the flow of lubricant in the clearance space of journal and bearing. The hole-entry hybrid conical journal bearing performance characteristics have been depicted for a wide range of radial load parameter (W¯r  = 0.25–1.5) with uniform distribution of holes at an angle of 30 deg in the circumferential direction. The numerically simulated results have been presented in terms of maximum fluid film pressure, minimum fluid film thickness, lubricant flow rate, direct fluid film stiffness coefficients, direct fluid film damping coefficients, and stability threshold speed. However, the proposed investigation of nonrecess hole-entry hybrid conical journal bearing shows important performance for bearing stiffness and minimum fluid film thickness at variable radial load and at given operating speed.

A charge-plasma-based dual-metal-gate recessed-source/drain dopingless junctionless transistor with enhanced analog and RF performance

2020 ◽  
Vol 19 (3) ◽  
pp. 1085-1099
Author(s):  
Prateek Kishor Verma ◽  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Santosh Kumar Gupta
Keyword(s):  
Metal Gate ◽  
Charge Plasma ◽  
Junctionless Transistor ◽  
Dual Metal ◽  
Rf Performance ◽  
A Charge

Pulsed Laser-Induced Amorphization of Silicon Films

1991 ◽  
Vol 235 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Silicon Film ◽  
Pulsed Laser ◽  
Temperature Sensing ◽  
Silicon Films ◽  
Molten Silicon ◽  
Quartz Substrates ◽  
Xecl Excimer Laser

ABSTRACTAmorphization of silicon films occurred through homogeneous solidification of molten silicon layers on quartz substrates induced by irradiation with a 30ns-XeCl excimer laser. The crystalline nucleation rate was obtained to be 8×1030m−3s−1. Silicon films were completely amorphized for films thinner than 18nm. Complete amorphizatoin is brought about by reduced grain size and reduced recalescence as the film thickness decreases. Recalescence was observed in situusing transient thermometry with a platinum-temperature-sensing layer when a 15nm-thick silicon film was amorphized.

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