Synthesis of Cu–Ti thin film multilayers on silicon substrates

2021 ◽  
Vol 44 (1) ◽  
Author(s):  
A Torrisi ◽  
P Horák ◽  
J Vacík ◽  
V Lavrentiev ◽  
A Cannavò ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Substrates

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

ИССЛЕДОВАНИЕ МАГНИТОРЕЗИСТИВНЫХ НАНОСТРУКТУР С МАГНИТОСТРИКЦИОННЫМ ЭФФЕКТОМ ДЛЯ УСТРОЙСТВ МАГНИТНОЙ СТРЕЙНТРОНИКИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 420-423
Author(s):  
Д.А. Жуков ◽  
В.В. Амеличев ◽  
Д.В. Костюк ◽  
А.И. Крикунов ◽  
Д.В. Васильев ◽  
...  
Keyword(s):  
Thin Film ◽  
Experimental Studies ◽  
Silicon Substrates ◽  
Multilayer Nanostructures ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

Представлены результаты экспериментальных исследований магнитострикционных и магниторезистивных свойств тонкопленочных многослойных наноструктур Ta/FeNiCo/CoFe/Ta и Ta/FeNiCo/CoFeВ/Ta на окисленных кремниевых подложках диаметром 100 мм. Экспериментально установлена зависимость величины анизотропного магниторезистивного эффекта от величины механических деформаций в экспериментальных образцах наноструктур. The paper presents the results of experimental studies of the magnetostriction and magnetoresistive properties of thin-film multilayer nanostructures Ta/FeNiCo/CoFe/Ta and Ta/FeNiCo/CoFeB/Ta on oxidized silicon substrates with a diameter of 100 mm. The dependence of the magnitude of the anisotropic magnetoresistive effect on the magnitude of mechanical strains in experimental samples of nanostructures has been experimentally established.

SrTiO3 Functional Ceramics Thin Film Prepared by Self-Assembled Monolayers with the Liquid Phase Deposition Method on Silicon Substrates

2010 ◽  
Vol 105-106 ◽  
pp. 270-273
Author(s):  
Hui Jun Ren ◽  
Guo Qiang Tan ◽  
Hong Yan Miao ◽  
Ya Yu Song ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Liquid Phase ◽  
Deposition Temperature ◽  
Precursor Solution ◽  
Self Assembled Monolayers ◽  
Silicon Substrates ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Surface Contact Angle

In this article, (NH4)2TiF6, SrNO3 and H3BO3 were used as raw materials to prepare the precursor solution with the ratio of AHFT/SN/BA=1:1:3. The thin films of SrTiO3 were fabricated on the functional silicon substrates (100) by self-assembled monolayers (SAMs) with the liquid phase deposition (LPD). This article also studied the effects of wet state and the deposition temperature of the precursor solution before and after the functionalization of silicon substrate on the thin film growth. The results indicated that after the immersion in OTS for 30min, the surface contact angle of the silicon substrate changed from 24.64° to 100.91°. The substrate appeared hydrophobic property and it was irradiated by UV light for 30min. Then the surface contact angle of the substrate decreased to 5.00°. The substrate appeared hydrophilicity. The concentration of the precursor solution was 0.025 mol/L, the deposition temperature was 40°C and the deposition time was 9h, which were all helpful to SrTiO3 crystallization. XRD and SEM were used to characterize the physical phase of thin film and surface morphology at 600 °C with annealing and heat retaining for 2h. The results indicated that the thin film prepared by the mono-crystal Si substrate was SrTiO3 thin film with better crystalline. On the crystal surfaces of (110), (100), (200) and (211), there appeared the obvious diffraction peaks. The SrTiO3 grains on the surface had the clear outline and were regular and long columnar crystals.

Investigation of Nanometric Thin-Film Bismuth Piezoresistors Deposited on Silicon Substrates

2012 ◽  
Vol 1477 ◽  
Author(s):  
Horacio V. Estrada
Keyword(s):  
Thin Film ◽  
Axial Strain ◽  
High Sensitivity ◽  
Metal Alloys ◽  
Silicon Substrates ◽  
Transverse Strain ◽  
Bending Stress ◽  
Pure Bending ◽  
Strain Fields ◽  
Strain Axis

ABSTRACTThin film bismuth piezoresistors, defined on oxidized silicon wafers, are investigated as a function of their orientation for their eventual integration on micro-electro-mechanical (MEMS) microsensors. Bismuth’s piezoresistance (or elasto-resistance) is experimentally investigated to accurately determine its longitudinal and transverse strain sensitivities. Whisker-shaped resistive elements defined on different orientations (from 0o, the beam’s main strain axis, to 90o, perpendicular to that axis) undergo changes of resistance (ΔR), associated with the induced strains on silicon cantilevers beam’s surface when these are mechanically loaded under pure bending stress conditions. For Bi-resistors, the traditional gage factor concept, (ΔR/Ro)/εl, is found to be equal to +16 and +33, for elements oriented along 0 and 90o, respectively, considerably larger than those for metals or metal alloys. These high sensitivity values and the “unusual” positive, higher value for the 90o (perpendicular) resistors can be of considerable interest for microsensors applications. The results of this study enable us to precisely determine the bismuth’s longitudinal and transverse strain sensitivities that are calculated to be equal to +26 and +40.5 respectively. This experimental study is extended to explore the Bi-films’ response to bi-axial strain fields.

Micro-capacitor with vertically grown silver nanowires and bismuth ferric oxide composite structures on silicon substrates

2016 ◽  
Vol 51 (7) ◽  
pp. 965-969 ◽  
Author(s):  
Daniel Choi ◽  
Boo Hyun An ◽  
Mariam Mansouri ◽  
Dima Ali ◽  
Malathe Khalil ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxide Film ◽  
Aluminum Oxide ◽  
Ferric Oxide ◽  
Silver Nanowires ◽  
Silicon Substrates ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Oxide Composite ◽  
Aluminum Oxide Film

We have designed and demonstrated a complementary metal-oxide-semiconductor compatible process for fabricating high capacitance micro-capacitors based on vertically grown silver nanowires on silicon substrates. Array of silver nanowires with high-aspect ratio were electrochemically grown in the pores of anodized aluminum oxide film, which was pre-formed through anodization of aluminum thin film deposited on titanium/silicon oxide/silicon substrates. High dielectric bismuth ferric oxide layer was electrodeposited to fill the gap between silver nanowires after anodized aluminum oxide film was removed. It was found that the micro-capacitor based on the silver nanowires/bismuth ferric oxide composite film possessed higher capacitance by approximately one order of magnitude from the COMSOL simulation results from the flat Ag thin-film capacitor and the silver nanowire capacitor.

Development of a piezoelectric lead titanate thin film process on silicon substrates by high rate gas flow sputtering

2007 ◽  
Vol 133 (1) ◽  
pp. 250-258 ◽  
Author(s):  
H. Jacobsen ◽  
Th. Jung ◽  
K. Ortner ◽  
K.I. Schiffmann ◽  
H.-J. Quenzer ◽  
...  
Keyword(s):  
Thin Film ◽  
Lead Titanate ◽  
Gas Flow ◽  
High Rate ◽  
Silicon Substrates ◽  
Titanate Thin Film

Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

2013 ◽  
Vol 378 ◽  
pp. 25-28 ◽  
Author(s):  
T. Nguyen Thanh ◽  
C. Robert ◽  
E. Giudicelli ◽  
A. Létoublon ◽  
C. Cornet ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Wells ◽  
Quantitative Study ◽  
Silicon Substrates ◽  
Si Thin Film

Synthesis of ZnO Nanowires by Hydrothermal Technique for Integration Into Chalcopyrite Thin Films

2012 ◽  
Vol 1406 ◽  
Author(s):  
H. Karaagac ◽  
M. Parlak ◽  
M. Saif Islam
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Seed Layer ◽  
Growth Parameters ◽  
Vertical Direction ◽  
Zno Nanowires ◽  
Growth Time ◽  
Silicon Substrates ◽  
Transmission Measurement ◽  
Hydrothermal Technique

ABSTRACTVertically oriented, highly dense ZnO nanowires (NWs) array was successfully grown on both glass and silicon substrates using hydrothermal technique. A systematic study was carried out to investigate the effects of growth parameters including growth time and thickness of ZnO seed layer on the quality of ZnO NWs in terms of their homogeneity and orientation in the vertical direction. The diameter as well as the length of grown ZnO NWs was found to be closely dependent on the thickness of the pre-coated ZnO seed layer. The structures of ZnO NWs and electron-beam evaporated AgGa0.5In0.5Se2 (AGIS) thin film have been characterized by X-ray diffraction measurements and optical properties were measured by transmission measurement. The optic band gap of AGIS thin film was found to be almost optimum (1.56 eV) to match the abundant part of solar cell spectrum. AGIS thin film was deposited on the synthesized ZnO NWs to form p-n heterojunction based inorganic solar cell, which exhibited photovoltaic behavior with a power conversion efficiency of 0.37 % under A.M (1.5) illumination.

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