Investigation of Nanometric Thin-Film Bismuth Piezoresistors Deposited on Silicon Substrates

2012 ◽  
Vol 1477 ◽  
Author(s):  
Horacio V. Estrada
Keyword(s):  
Thin Film ◽  
Axial Strain ◽  
High Sensitivity ◽  
Metal Alloys ◽  
Silicon Substrates ◽  
Transverse Strain ◽  
Bending Stress ◽  
Pure Bending ◽  
Strain Fields ◽  
Strain Axis

ABSTRACTThin film bismuth piezoresistors, defined on oxidized silicon wafers, are investigated as a function of their orientation for their eventual integration on micro-electro-mechanical (MEMS) microsensors. Bismuth’s piezoresistance (or elasto-resistance) is experimentally investigated to accurately determine its longitudinal and transverse strain sensitivities. Whisker-shaped resistive elements defined on different orientations (from 0o, the beam’s main strain axis, to 90o, perpendicular to that axis) undergo changes of resistance (ΔR), associated with the induced strains on silicon cantilevers beam’s surface when these are mechanically loaded under pure bending stress conditions. For Bi-resistors, the traditional gage factor concept, (ΔR/Ro)/εl, is found to be equal to +16 and +33, for elements oriented along 0 and 90o, respectively, considerably larger than those for metals or metal alloys. These high sensitivity values and the “unusual” positive, higher value for the 90o (perpendicular) resistors can be of considerable interest for microsensors applications. The results of this study enable us to precisely determine the bismuth’s longitudinal and transverse strain sensitivities that are calculated to be equal to +26 and +40.5 respectively. This experimental study is extended to explore the Bi-films’ response to bi-axial strain fields.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

ИССЛЕДОВАНИЕ МАГНИТОРЕЗИСТИВНЫХ НАНОСТРУКТУР С МАГНИТОСТРИКЦИОННЫМ ЭФФЕКТОМ ДЛЯ УСТРОЙСТВ МАГНИТНОЙ СТРЕЙНТРОНИКИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 420-423
Author(s):  
Д.А. Жуков ◽  
В.В. Амеличев ◽  
Д.В. Костюк ◽  
А.И. Крикунов ◽  
Д.В. Васильев ◽  
...  
Keyword(s):  
Thin Film ◽  
Experimental Studies ◽  
Silicon Substrates ◽  
Multilayer Nanostructures ◽  
Magnetoresistive Effect ◽  
Anisotropic Magnetoresistive Effect

Представлены результаты экспериментальных исследований магнитострикционных и магниторезистивных свойств тонкопленочных многослойных наноструктур Ta/FeNiCo/CoFe/Ta и Ta/FeNiCo/CoFeВ/Ta на окисленных кремниевых подложках диаметром 100 мм. Экспериментально установлена зависимость величины анизотропного магниторезистивного эффекта от величины механических деформаций в экспериментальных образцах наноструктур. The paper presents the results of experimental studies of the magnetostriction and magnetoresistive properties of thin-film multilayer nanostructures Ta/FeNiCo/CoFe/Ta and Ta/FeNiCo/CoFeB/Ta on oxidized silicon substrates with a diameter of 100 mm. The dependence of the magnitude of the anisotropic magnetoresistive effect on the magnitude of mechanical strains in experimental samples of nanostructures has been experimentally established.

scholarly journals Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4169
Author(s):  
Gennady Gorokh ◽  
Natalia Bogomazova ◽  
Abdelhafed Taleb ◽  
Valery Zhylinski ◽  
Timur Galkovsky ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Gas Sensing ◽  
Oxide Films ◽  
High Sensitivity ◽  
Anodic Alumina ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Layer By Layer ◽  
Gas Sensitivity ◽  
Nanoporous Anodic Alumina

The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption.

Synthesis of Cu–Ti thin film multilayers on silicon substrates

2021 ◽  
Vol 44 (1) ◽  
Author(s):  
A Torrisi ◽  
P Horák ◽  
J Vacík ◽  
V Lavrentiev ◽  
A Cannavò ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Substrates

SrTiO3 Functional Ceramics Thin Film Prepared by Self-Assembled Monolayers with the Liquid Phase Deposition Method on Silicon Substrates

2010 ◽  
Vol 105-106 ◽  
pp. 270-273
Author(s):  
Hui Jun Ren ◽  
Guo Qiang Tan ◽  
Hong Yan Miao ◽  
Ya Yu Song ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Liquid Phase ◽  
Deposition Temperature ◽  
Precursor Solution ◽  
Self Assembled Monolayers ◽  
Silicon Substrates ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Surface Contact Angle

In this article, (NH4)2TiF6, SrNO3 and H3BO3 were used as raw materials to prepare the precursor solution with the ratio of AHFT/SN/BA=1:1:3. The thin films of SrTiO3 were fabricated on the functional silicon substrates (100) by self-assembled monolayers (SAMs) with the liquid phase deposition (LPD). This article also studied the effects of wet state and the deposition temperature of the precursor solution before and after the functionalization of silicon substrate on the thin film growth. The results indicated that after the immersion in OTS for 30min, the surface contact angle of the silicon substrate changed from 24.64° to 100.91°. The substrate appeared hydrophobic property and it was irradiated by UV light for 30min. Then the surface contact angle of the substrate decreased to 5.00°. The substrate appeared hydrophilicity. The concentration of the precursor solution was 0.025 mol/L, the deposition temperature was 40°C and the deposition time was 9h, which were all helpful to SrTiO3 crystallization. XRD and SEM were used to characterize the physical phase of thin film and surface morphology at 600 °C with annealing and heat retaining for 2h. The results indicated that the thin film prepared by the mono-crystal Si substrate was SrTiO3 thin film with better crystalline. On the crystal surfaces of (110), (100), (200) and (211), there appeared the obvious diffraction peaks. The SrTiO3 grains on the surface had the clear outline and were regular and long columnar crystals.

Fabrication and characteristics of the high-sensitivity humidity sensor of anodic aluminum oxide based on silicon substrates

2018 ◽  
Vol 32 (16) ◽  
pp. 1850199 ◽  
Author(s):  
Degao Lan ◽  
Xiaofeng Zhao ◽  
Fei Wang ◽  
Chunpeng Ai ◽  
Dianzhong Wen ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Silicon Substrate ◽  
Anodic Aluminum Oxide ◽  
Nonlinear Response ◽  
Humidity Sensor ◽  
High Sensitivity ◽  
Silicon Substrates ◽  
High Porosity ◽  
Interdigitated Electrodes ◽  
Anodic Aluminum

The humidity sensor based on silicon substrate is presented in this paper, which consists of anodic aluminum oxide (AAO) film and interdigitated electrodes. By using electro-chemical oxidizing technique, AAO film with high porosity is fabricated on the silicon substrate. Under optimal oxidization condition, pore diameter of 37–79 nm and depth about [Formula: see text]m is achieved. Interdigitated electrodes are fabricated on the top of AAO film by vacuum evaporation deposition method. The results show that the sensor has different nonlinear response in whole range of relative humidity (RH). Moreover, it has almost linear relationship between the capacitance and RH at high RH from 75% to 95%. The highest sensitivity is obtained 613 pF/%RH at 1 kHz, which is much higher than other frequencies.

B- and P-Doped Si0.8Ge0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor

2006 ◽  
Vol 320 ◽  
pp. 99-102 ◽  
Author(s):  
Kazuki Tajima ◽  
Woosuck Shin ◽  
Maiko Nishibori ◽  
Norimitsu Murayama ◽  
Toshio Itoh ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Oxidation ◽  
Exothermic Reaction ◽  
High Sensitivity ◽  
Hydrogen Sensor ◽  
Thermoelectric Effect ◽  
Boron Doped ◽  
Reliable Monitoring ◽  
Ppm Level ◽  
Pt Catalyzed

Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.

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