TCAD simulation study on reliability issue of heterojunction heterodielectric FinFET: Effect of interface trap charge, BOX height and temperature

4H-Silicon Carbide VDMOSFET is simulated using the Sentaurus TCAD package of Synopsys. The simulator is calibrated against measured data for a wide range of bias conditions and temperature. Material parameters of 4H-SiC are taken from literature and used in the available silicon models of the simulator. The empirical parameters are adjusted to get a good fit between the simulated curves and measured data. The simulation incorporates the bias and temperature dependence of important physical mechanisms like interface trap density, coulombic interface trap scattering, surface roughness scattering and velocity saturation.

Download Full-text

2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs

10.1109/sispad54002.2021.9592570 ◽

2021 ◽

Author(s):

Takeshi Suwa

Keyword(s):

Simulation Study ◽

Current Filament ◽

Tcad Simulation

Download Full-text

Impact of Interface Trap Charge on Analog/RF parameters of Novel Heterogeneous Gate Dielectric Tri-Metal Gate FinFET

2021 International Conference on Communication, Control and Information Sciences (ICCISc) ◽

10.1109/iccisc52257.2021.9484911 ◽

2021 ◽

Author(s):

Somya Saraswat ◽

Dharmendra Singh Yadav

Keyword(s):

Gate Dielectric ◽

Interface Trap ◽

Metal Gate ◽

Trap Charge

Download Full-text

A TCAD Simulation Study of Three-Independent-Gate Field-Effect Transistors at the 10-nm Node

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3089671 ◽

2021 ◽

pp. 1-7

Author(s):

Patsy Cadareanu ◽

Pierre-Emmanuel Gaillardon

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Tcad Simulation ◽

Independent Gate

Download Full-text

Oxide-trap charge-pumping for radiation reliability issue in MOS devices

2009 4th International Conference on Design & Technology of Integrated Systems in Nanoscal Era ◽

10.1109/dtis.2009.4938073 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi ◽

Arezki Mokrani

Keyword(s):

Trap Charge ◽

Charge Pumping ◽

Mos Devices ◽

Oxide Trap ◽

Reliability Issue

Download Full-text

A TCAD simulation study of impact of strain engineering on nanoscale strained Si NMOSFETs with a silicon–carbon alloy stressor

Thin Solid Films ◽

10.1016/j.tsf.2009.09.078 ◽

2009 ◽

Vol 518 (5) ◽

pp. 1595-1598 ◽

Cited By ~ 2

Author(s):

Shu-Tong Chang ◽

Wei-Ching Wang ◽

Chang-Chun Lee ◽

Jacky Huang

Keyword(s):

Simulation Study ◽

Strain Engineering ◽

Strained Si ◽

Silicon Carbon ◽

Tcad Simulation

Download Full-text

Interface Trap Charge Effects of Monolithic 3D Junctionless Field-Effect Transistors (JLFET) Inverter

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19388 ◽

2021 ◽

Vol 21 (8) ◽

pp. 4252-4257

Author(s):

Tae Jun Ahn ◽

Yun Seop Yu

Keyword(s):

Computer Aided Design ◽

Field Effect Transistors ◽

Three Dimensional ◽

Interface Trap ◽

Charge Effects ◽

Trap Charge ◽

Interlayer Dielectric ◽

Threshold Voltages ◽

Propagation Delays ◽

Aided Design

We investigated the effect of the interface trap charge in a monolithic three-dimensional inverter structure composing of JLFETs (M3DINV-JLFET), using the interface trap charge distribution extracted in the previous study. The effect of interface trap charge was compared with a conventional M3DINV composing of MOSFETs (M3DINV-MOSFETs) by technology computer-aided design simulation. When the interface trap charges in both M3DINV-JLFET and M3DINV-MOSFET are added, the threshold voltages, on-current levels, and subthreshold swings of both JLFETs and MOSFETs increase, decrease, and increase, respectively, and switching voltages and propagation delays of M3DINV are shifted and increased, respectively. However, since JLFET and MOSFET have different current paths of bulk and interface in channel, respectively, MOSFET is more affected by the interface trap, and M3DINV-JLFET has almost less effect of interface trap at different thickness of interlayer dielectric, compared to M3DINV-MOSFET.

Download Full-text