A kinetic decomposition process for air-gap interconnects and induced deformation instability of a low-k dielectric cap layer

2014 ◽  
Vol 28 (1) ◽  
pp. 255-261 ◽  
Author(s):  
Suk-Kyu Ryu ◽  
Jay Im ◽  
Paul S. Ho ◽  
Rui Huang
Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1274
Author(s):  
Ryu ◽  
Cho ◽  
Han

Air-gap (AG) technology on back-end-of-line (BEOL) provides a means to improve performance without area or power degradation. However, the “blind” use of AG based on traditional design methodologies does not provide sufficient performance gain. We developed an AG-aware design methodology to maximize performance gain with minimum cost. The experimental results of the proposed methodology, which was tested using a 10 nm Advanced RISC Machine (ARM) Cortex-A9 quad-core central processing unit (CPU), indicated a performance gain of 6.1–8.4% compared with traditional AG design. The performance gain achieved represents about half of the 10–15% performance improvement under the same power by a process node shrink. A Si process of consecutive double AG layers was developed by overcoming various process challenges, such as AG depth control, Cu/ultra-low-k damage, the hermetic AG liner, and step-height control above the AG. Furthermore, the capacitance was reduced by 17.0%, which satisfied the target goal in the simulation stage for the assumed structure. The optimized integration process was validated according to the function yield of the CPU, which was comparable to that of a non-AG process. The time-dependent dielectric breakdown and electromigration lifetime of the AG wire satisfied the 10-year criteria, and the assembly yield was verified.


2003 ◽  
Vol 82 (9) ◽  
pp. 1380-1382 ◽  
Author(s):  
F. Iacopi ◽  
S. H. Brongersma ◽  
K. Maex

2002 ◽  
Vol 732 ◽  
Author(s):  
Masahiro Ota ◽  
Manabu Tsujimura ◽  
Hiroaki Inoue ◽  
Hirokazu Ezawa ◽  
Masahiro Miyata

AbstractDevelopment of semiconductors has proceeded according to broad frameworks such as the International Technology Roadmap for Semiconductors (ITRS). A key development in semiconductor technology involves the adoption of several new materials, such as Cu, low-k and high-k materials, and noble metals in capacitors, transistors, and/or interconnects. These developments will likely lead to wider application of the planarization process to new processes and new materials, and call for even stricter planarization performance requirements. One example involves planarizing Ag interconnects with an optimal cap layer configuration for reducing RC delays. The Cu interconnect process is currently used to reduce wire resistivity. One material that has been proposed as a successor to Cu is Ag. Many low-k materials have been developed with the goal of reducing dielectric constant (k). However, damascene design and matters such as cap layer configuration are also important considerations in reducing the effective dielectric constant (k eff). Our report herein begins by proposing Ni-B deposited by electroless plating as a candidate cap material, due to the following characteristics: (1) it offers good selectivity for Ag interconnects; (2) it provides good barrier effects through thermal processes; and (3) it provides good controllability of deposition rates. Next, we report that Ag damascene with Ni-B cap layer can be realized through electroplating and polishing of Ag interconnects. Although Ag polishing technologies are currently not fully developed, we suggest that they may nevertheless be successfully applied to polish Ag.


Sign in / Sign up

Export Citation Format

Share Document