Facile assembly of single α-MoO3 microbelt/β-Ni(OH)2 heterojunction ultraviolet–visible detector with fast switching characteristics

2020 ◽  
Vol 10 (6) ◽  
pp. 1771-1777
Author(s):  
Naisen Yu ◽  
Haiou Li ◽  
Yunfeng Wu
Keyword(s):  
Fast Switching ◽  
Switching Characteristics

scholarly journals Modeling and Experimental Investigation of Electromagnetic Interference (EMI) for SiC-Based Motor Drive

Energies ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 5173
Author(s):  
Yingzhe Wu ◽  
Shan Yin ◽  
Hui Li ◽  
Minghai Dong
Keyword(s):  
Electromagnetic Interference ◽  
Semiconductor Device ◽  
Frequency Domain Analysis ◽  
Motor Drives ◽  
Motor Drive ◽  
Switching Frequency ◽  
Switching Speed ◽  
Fast Switching ◽  
Source Voltage ◽  
Switching Characteristics

The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency, power density, and reliability. However, the fast switching transient and serious switching ringing of the SiC MOSFET can cause unwanted high-frequency (HF) electromagnetic interference (EMI), which may significantly reduce the reliability of the motor drive in many aspects. In order to comprehensively reveal the mechanism of the EMI previously used in motor drives using SiC MOSFET, this paper plans to analyze the influences of both HF impedance of the motor and switching characteristics of the SiC MOSFET. A simulation model for motor drives has been proposed, which contains the HF circuit model of the motor as well as a semi-behavioral analytical model of the SiC MOSFET. Since the model shows a good agreement with the experimentally measured results on spectra of drain-source voltage of the SiC MOSFET (vds), phase to ground voltage of the motor (vphase), CM voltage (vcm), phase current of the motor (idm), and CM current (icm), it can be adopted to quantitatively investigate the influence of the motor impedance on EMI through frequency-domain analysis. Additionally, the impacts of switching characteristics of SiC MOSFET on EMI are also well studied according to relative experiment results in terms of switching speed, switching frequency, and switching ringing. Based on the analysis above, the relationship between motor impedance, switching characteristics of the SiC MOSFET, and HF EMI can be figured out, which is able to provide much helpful assistance for application of the motor drive.

Fast switching characteristics in vertical organic field effect transistors

2013 ◽  
Vol 103 (7) ◽  
pp. 073502 ◽  
Author(s):  
Michael Greenman ◽  
Ariel J. Ben-Sasson ◽  
Zhihua Chen ◽  
Antonio Facchetti ◽  
Nir Tessler
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Fast Switching ◽  
Switching Characteristics

Implementation of a High Voltage Pulse Modulator with Low Voltage Ripple and Fast Switching Characteristics

2012 ◽  
Vol 9 (1) ◽  
pp. 466-471
Author(s):  
Hung-Liang Cheng ◽  
Chien-Hsuan Chang ◽  
Chun-An Cheng ◽  
Chin-Wen Chuang
Keyword(s):  
High Voltage ◽  
Voltage Pulse ◽  
Low Voltage ◽  
High Voltage Pulse ◽  
Fast Switching ◽  
Voltage Ripple ◽  
Pulse Modulator ◽  
Switching Characteristics

Fast switching characteristics of a microlens array using the electroclinic effect of SmA^* liquid crystals

2009 ◽  
Vol 48 (19) ◽  
pp. 3737 ◽  
Author(s):  
Yong-Min Lee ◽  
Jin Seog Gwag ◽  
Yoonseuk Choi ◽  
Kwang-Ho Lee ◽  
Chang-Jae Yu ◽  
...  
Keyword(s):  
Liquid Crystals ◽  
Microlens Array ◽  
Fast Switching ◽  
Switching Characteristics

PWM Power Supply Using SiC RESURF JFETs with High Speed Switching

2013 ◽  
Vol 740-742 ◽  
pp. 1056-1059
Author(s):  
Satoshi Hatsukawa ◽  
Takashi Tsuno ◽  
Kazuhiro Fujikawa ◽  
Nobuo Shiga ◽  
Tuya Wuren ◽  
...  
Keyword(s):  
Pulse Width ◽  
High Speed ◽  
Pulse Width Modulation ◽  
Sine Wave ◽  
Pulse Width Modulated ◽  
Fast Switching ◽  
Input Waveform ◽  
Switching Characteristics ◽  
High Speed Switching ◽  
Reduced Surface

400V/2.5A 4H-SiC JFETs, having a reduced surface field (RESURF) structure have been fabricated. Measurements on the on-resistance, blocking, and switching characteristics were carried out. It was confirmed that the JFET has fast switching characteristics. A demonstration of a Pulse Width Modulation (PWM) decoder using JFETs was carried out. The input waveform, which is pulse width modulated 20.5MHz at 4.1MHz sine wave, as able to be decoded at 4.1MHz sine wave.

Fast switching characteristics of magnetic persistent current switch for SMES

1995 ◽  
Vol 5 (2) ◽  
pp. 282-285 ◽  
Author(s):  
N. Sadakata ◽  
K. Uchiyama ◽  
K. Goto ◽  
T. Saito ◽  
O. Kohno ◽  
...  
Keyword(s):  
Persistent Current ◽  
Current Switch ◽  
Fast Switching ◽  
Switching Characteristics
Sign in / Sign up

Export Citation Format

Share Document