Analysis of the influence of disk and wafer rotation speed on the SiO2 thin-film characteristics in a space-divided PE-ALD system

2021 ◽  
Author(s):  
Baek-Ju Lee ◽  
Dong-Won Seo ◽  
Jae-Wook Choi
Keyword(s):  
Thin Film ◽  
Rotation Speed ◽  
Sio2 Thin Film ◽  
Film Characteristics

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

Thin Film Characteristics and FET Performances of β-Octyl-substituted Long Oligothiophenes

2006 ◽  
Vol 35 (8) ◽  
pp. 942-943 ◽  
Author(s):  
Kazuo Takimiya ◽  
Katsuhiro Sakamoto ◽  
Tetsuo Otsubo ◽  
Yoshihito Kunugi
Keyword(s):  
Thin Film ◽  
Film Characteristics

Thin film characteristics of fluorine-substituted monolayers prepared by chemical adsorption from solution

1993 ◽  
Vol 230 (2) ◽  
pp. 209-216 ◽  
Author(s):  
Norihisa Mino ◽  
Kazufumi Ogawa ◽  
Takatoshi Minoda ◽  
Masahiro Takatsuka ◽  
Seimei Sha ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Adsorption ◽  
Adsorption From Solution ◽  
Film Characteristics

Optical Properties of Zn and Cu Co-doped TiO2 ∶SiO2 Thin Film Materials

2017 ◽  
Vol 38 (1) ◽  
pp. 27-31 ◽  
Author(s):  
伞靖 SAN Jing ◽  
魏长平 WEI Chang-ping ◽  
孙双 SUN Shuang ◽  
何瑞英 HE Rui-ying ◽  
彭春佳 PENG Chun-jia
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Doped Tio2 ◽  
Sio2 Thin Film ◽  
Co Doped

Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices

2006 ◽  
Vol 50 (6) ◽  
pp. 1097-1104 ◽  
Author(s):  
Darrell Niemann ◽  
Norman Gunther ◽  
Charles Kwong ◽  
Mark Barycza ◽  
Mahmud Rahman
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Sio2 Thin Film ◽  
Capacitance Voltage ◽  
Organic Semiconductor Devices ◽  
Voltage Hysteresis
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