Voltage compensation using sequence component detection technique under sag, swell, and distorted conditions of grid voltages

2021 ◽  
Author(s):  
Saad F. Al-Gahtani
Keyword(s):  
Detection Technique ◽  
Voltage Compensation

Application of Improved Voltage Compensation in the SEM to Imaging of Organic Materials

1973 ◽  
Vol 31 ◽  
pp. 444-445
Author(s):  
P.J. Killingworth ◽  
M. Warren
Keyword(s):  
Electron Beam ◽  
Organic Materials ◽  
Operating Parameters ◽  
Low Density ◽  
Beam Diameter ◽  
Incident Electron Beam ◽  
Specimen Material ◽  
Voltage Compensation ◽  
Selection Of ◽  
Scanning Electron

Ultimate resolution in the scanning electron microscope is determined not only by the diameter of the incident electron beam, but by interaction of that beam with the specimen material. Generally, while minimum beam diameter diminishes with increasing voltage, due to the reduced effect of aberration component and magnetic interference, the excited volume within the sample increases with electron energy. Thus, for any given material and imaging signal, there is an optimum volt age to achieve best resolution.In the case of organic materials, which are in general of low density and electric ally non-conducting; and may in addition be susceptible to radiation and heat damage, the selection of correct operating parameters is extremely critical and is achiev ed by interative adjustment.

Clinical Application and Results of the Assessment of Coronary Blood Flow by the Regional Precordial Xenon Residue Detection Technique

1978 ◽  
Vol 17 (04) ◽  
pp. 161-171
Author(s):  
H.-J. Engel ◽  
H. Hundeshagen ◽  
P. R. Lichtlen
Keyword(s):  
Wall Motion ◽  
High Flow ◽  
Detection Technique ◽  
Fatty Tissue ◽  
Technical Aspects ◽  
Residue Detection ◽  
High Affinity ◽  
Artery Disease ◽  
The Right ◽  
Drug Interventions

Methodological and technical aspects as well as application and results of the precordial Xenon-residue-detection technique are critically reviewed. The results concern mainly normal flow in various regions of the heart esp. in the free wall of the right and left ventricle, poststenotic flow in patients with coronary artery disease in relation to the degree of proximal nar-rowings as well as wall motion of the corresponding LV segment, bypassgraft flow and flow after drug interventions esp. nitrates, betablockers, the calcium-antagonist Nifedipine and the coronary dilator Dipyridamole. In spite of its serious limitations (high affinity of Xenon for fatty tissue, geometrical problems in the assessment of flow and its relation to anatomy, gas exchange in situations of high flow etc.), the technique is found to be a usefull investigatory tool. Due to its technical display and the related high costs routine application is, however, prohibitive.

Template Detection Technique From Assorted Web Pages

2012 ◽  
Vol 2 (9) ◽  
pp. 148-150 ◽  
Author(s):  
Marriboyina Rajendra ◽  
◽  
S. Suresh Babu
Keyword(s):  
Detection Technique ◽  
Web Pages

A Primary Signal Detection Technique using Sub-band Pulses of a Multi-band Pulse

2013 ◽  
Vol 133 (6) ◽  
pp. 1145-1152
Author(s):  
Kohei Ohno ◽  
Makoto Itami ◽  
Tetsushi Ikegami
Keyword(s):  
Signal Detection ◽  
Detection Technique ◽  
Primary Signal ◽  
Multi Band

Application of KOH Electrochemical Etch and Passive Voltage Contrast Techniques for Deep Sub-Micron CMOS Leaky Gate Detection

2000 ◽  
Author(s):  
Fred Y. Chang ◽  
Victer Chan
Keyword(s):  
Case Studies ◽  
Detection Technique ◽  
Cobalt Silicide ◽  
Process Technology ◽  
Process Flow ◽  
Voltage Contrast ◽  
Emission Detection ◽  
Wet Etch ◽  
Direct Confirmation

Abstract This paper describes a novel de-process flow by combining cobalt silicide / nitride wet etch with KOH electrochemical wet etch (ECW) to identify leaky gate in silicided deep sub-micron process technology. Traditionally, leaky gate identification requires direct confirmation by gate level electrical or emission detection technique. Ohtani [1] used KOH electrochemical etch application to identify nonsilicided leaky gate capacitor in DRAM without using the above confirmation. The result of the case study demonstrates the expanded application of ECW etch to both silicided 0.18um logic and SRAM devices. Voltage contrast at metal 1 to assist leaky gate localization is also proposed. By combining both techniques, the possibility for isolating gate related defects are greatly enhanced. Case studies also show the advantages of the proposed technique over conventional poly level voltage contrast in leaky gate identification especially with devices that use local interconnect and nitride liner process.

Sign in / Sign up

Export Citation Format

Share Document