Competing Kinetic and Thermodynamic Processes in the Growth and Ordering of Ga0.5In0.5P

1993 ◽  
Vol 312 ◽  
Author(s):  
Sarah R. Kurtz ◽  
J. M. Olson ◽  
D. J. Arent ◽  
A. E. Kibbler ◽  
K. A. Bertness
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Band Gap ◽  
Growth Temperature ◽  
Growth Parameter ◽  
High Growth ◽  
High Growth Rate ◽  
Temperature Growth ◽  
Rate Region ◽  
Thermodynamic Processes

AbstractThe band gap of Ga0.5In0.5P is studied as a function of growth temperature, growth rate, and substrate misorientation. As each of these parameters is independently varied the band gap first decreases, then increases, resulting in “U” shaped curves. Each “U” shaped curve shifts if any other growth parameter is varied. The data presented here can be divided into two regions of parameter space. In the low temperature, low substrate misorientation, high growth rate region, the band gap is shown to decrease with increasing growth temperature, decreasing growth rate, and increasing substrate misorientation. In the high temperature, high substrate misorientation, low growth rate region, the opposite trends are observed. The implications of these data on the ordering mechanism are discussed.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 354
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

μc-Si:H n-type doped layers resistant against HWCVD i-layers deposited at high temperature and high growth rate

2006 ◽  
Vol 501 (1-2) ◽  
pp. 338-340 ◽  
Author(s):  
Aad Gordijn ◽  
Jeroen Francke ◽  
Jatindra K. Rath ◽  
Ruud E.I. Schropp
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
High Growth ◽  
High Growth Rate

Epitaxial Growth of 4H-SiС Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method

2012 ◽  
Vol 717-720 ◽  
pp. 97-100
Author(s):  
Hyun Seung Lee ◽  
Min Jae Kim ◽  
Min Hee Kim ◽  
Sang Il Lee ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Growth Temperature ◽  
Atmospheric Pressure ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Cvd Method

The chlorinated precursor is recently focused for high growth rate and high quality epitaxial layer. In the previous studies, the addition of chlorinated species from Si2Cl6 in the gas phase eliminated simultaneous Si nucleation which interferes with epitaxy. In this work, the characterization of epitaxial layers grown with chlorinated species is focused. High growth rate of 30 μm/h was achieved by using Si2(CH3)6 and Si2Cl6 as chlorinated precursors. We concluded that high growth rate was achieved by using HMDS and HCDS as the precursor of SiC at growth temperature of 1600 °C.

Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method

2020 ◽  
Vol 13 (9) ◽  
pp. 095502
Author(s):  
Norihiro Hoshino ◽  
Isaho Kamata ◽  
Takahiro Kanda ◽  
Yuichiro Tokuda ◽  
Hironari Kuno ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
High Growth ◽  
High Growth Rate ◽  
Bulk Crystal ◽  
Source Method ◽  
Gas Source ◽  
Dislocation Densities ◽  
High Temperature Gas

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method

2014 ◽  
Vol 778-780 ◽  
pp. 59-62 ◽  
Author(s):  
Isaho Kamata ◽  
Norihiro Hoshino ◽  
Yuichiro Tokuda ◽  
Emi Makino ◽  
Jun Kojima ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
High Temperature ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Source Method ◽  
Gas Source ◽  
Fast Growth Rate ◽  
High Temperature Gas

This paper reports on evidence of high-quality and very fast 4H-SiC crystal growth achieved using a high-temperature gas source method. The formation of threading screw dislocations (TSDs) during crystal growth was examined by comparing synchrotron X-ray topography images taken for a seed and grown crystals, while the generation of a high density of new TSDs is observed under improper growth condition. High-quality crystal growth retaining the TSD density of the seed crystal was accomplished under an improved condition, even for a very high growth rate of 2.1 mm/h.

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

2013 ◽  
Vol 740-742 ◽  
pp. 23-26 ◽  
Author(s):  
Naoyoshi Komatsu ◽  
Takeshi Mitani ◽  
Tetsuo Takahashi ◽  
Masayuki Okamura ◽  
Tomohisa Kato ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Single Crystal ◽  
Growth Temperature ◽  
Crystallization Front ◽  
Stable Solution ◽  
High Growth ◽  
High Growth Rate ◽  
Solute Element ◽  
Adequate Condition

We have investigated growth rate and surface morphology of 4H-SiC single crystal grown from Si-C solution with various supersaturation levels at growth temperature in the range from 1840 to 2140 °C. The growth rate depends linearly on the amount of supersaturated carbon, irrespective of the growth temperature. This indicates that the growth is limited by the transfer of solute element onto the crystallization front. The adequate condition for stable solution growth are discussed with respect to high growth rate and surface morphology.

scholarly journals Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing

2008 ◽  
Vol 105 (46) ◽  
pp. 17620-17625 ◽  
Author(s):  
Yu-fei Meng ◽  
Chih-shiue Yan ◽  
Joseph Lai ◽  
Szczesny Krasnicki ◽  
Haiyun Shu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
High Temperature ◽  
Single Crystal ◽  
Defect Structure ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
Nitrogen Vacancy ◽  
Single Crystal Diamond

Single crystal diamond produced by chemical vapor deposition (CVD) at very high growth rates (up to 150 μm/h) has been successfully annealed without graphitization at temperatures up to 2200 °C and pressures <300 torr. Crystals were annealed in a hydrogen environment by using microwave plasma techniques for periods of time ranging from a fraction of minute to a few hours. This low-pressure/high-temperature (LPHT) annealing enhances the optical properties of this high-growth rate CVD single crystal diamond. Significant decreases are observed in UV, visible, and infrared absorption and photoluminescence spectra. The decrease in optical absorption after the LPHT annealing arises from the changes in defect structure associated with hydrogen incorporation during CVD growth. There is a decrease in sharp line spectral features indicating a reduction in nitrogen-vacancy-hydrogen (NVH−) defects. These measurements indicate an increase in relative concentration of nitrogen-vacancy (NV) centers in nitrogen-containing LPHT-annealed diamond as compared with as-grown CVD material. The large overall changes in optical properties and the specific types of alterations in defect structure induced by this facile LPHT processing of high-growth rate single-crystal CVD diamond will be useful in the creation of diamond for a variety of scientific and technological applications.

Growth of high-quality AlN at high growth rate by high-temperature MOVPE

2006 ◽  
Vol 3 (6) ◽  
pp. 1617-1619 ◽  
Author(s):  
N. Fujimoto ◽  
T. Kitano ◽  
G. Narita ◽  
N. Okada ◽  
K. Balakrishnan ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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