Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications

1996 ◽  
Vol 164 (1-4) ◽  
pp. 362-370 ◽  
Author(s):  
R.A. Hamm ◽  
S. Chandrasekhar ◽  
L. Lunardi ◽  
M. Geva ◽  
R. Malik ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Carbon Doped ◽  
Device Applications

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

1990 ◽  
Vol 216 ◽  
Author(s):  
D.C. La Tulipe ◽  
D.J. Frank ◽  
H. Munekata
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Scanning Electron Micrographs ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Novel Device ◽  
Physical Sputtering ◽  
Chlorine Gas ◽  
Device Applications ◽  
Scanning Electron

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

scholarly journals Synthesis and Characteristics of Carbon Nanotube Using Plasma Arc Discharge

2018 ◽  
Vol 17 (3) ◽  
pp. 20-22
Author(s):  
Suhana Mohamed Sultan ◽  
Nurul Syazwani Azahurin ◽  
Azam Mohamad
Keyword(s):  
Carbon Nanoparticles ◽  
Arc Discharge ◽  
Low Cost ◽  
Average Diameter ◽  
Plasma Discharge ◽  
Arc Plasma ◽  
Electrical Characteristics ◽  
Sem Image ◽  
Plasma Arc Discharge ◽  
Device Applications

Carbon nanoparticles (CNP) were synthesized in arc plasma discharge using a simple, low-cost and toxic-free precursor gas. The structural and electrical characteristics were examined. The diameter and the height of the grown CNP was 28.5 μm and  316.7 μm , respectively. SEM image showed existence of a high density and uniform nanostructures within the cylindrical bulk CNP tube. The average diameter of the nanoparticles is 600 nm. The electrical characteristics revealed  low resistance with R = 7.23 mΩ with Cu electrodes.  In addition, the device exhibited a   high conductivity of 6.8 x 105 Scm-1. These results indicate the potential of CNP material for power device applications.

scholarly journals Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn2O3-xN/Cu Integration

Molecules ◽  
2019 ◽  
Vol 24 (21) ◽  
pp. 3882 ◽  
Author(s):  
Cheng ◽  
Lin ◽  
Lee ◽  
Chen ◽  
Fang
Keyword(s):  
Thermal Stress ◽  
Electric Field ◽  
Dielectric Breakdown ◽  
Electrical Characteristics ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Mn Oxide ◽  
Cu Film ◽  
Mis Capacitors ◽  
Low K

In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn2O3-xN film, additional annealing at 450 °C was implemented. In this study, the electrical characteristics and reliability of this integrated Cu/Mn2O3-xN/p-SiOCH(N)/Si structure were investigated. The proposed Cu/Mn2O3-xN/p-SiOCH(N)/Si capacitors exhibited poor dielectric breakdown characteristics in the as-fabricated stage, although, less degradation was found after thermal stress. Moreover, its time-dependence-dielectric-breakdown electric-field acceleration factor slightly increased after thermal stress, leading to a larger dielectric lifetime in a low electric-field as compared to other metal-insulator-silicon (MIS) capacitors. Furthermore, its Cu barrier ability under electrical or thermal stress was improved. As a consequence, the proposed Cu/Mn2O3-xN/p-SiCOH(N) scheme is promising integrity for back-end-of-line interconnects.

Electrical characteristics of carbon-doped GaAs

1993 ◽  
Vol 12 (16) ◽  
pp. 1251-1252 ◽  
Author(s):  
Seong-Il Kim ◽  
Moo-Sung Kim ◽  
Yong Kim ◽  
Kyung Sook Eom ◽  
Suk-Ki Min ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Carbon Doped

scholarly journals Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/ Mn2O3-xN/Cu Integration

2019 ◽  
Author(s):  
Yi-Lung Cheng ◽  
Yu-Lu Lin ◽  
Chih-Yen Lee ◽  
Giin-Shan Chen ◽  
Jau-Shiung Fang
Keyword(s):  
Thermal Stress ◽  
Electric Field ◽  
Dielectric Breakdown ◽  
Electrical Characteristics ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Mn Oxide ◽  
Cu Film ◽  
Mis Capacitors ◽  
Low K

In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn2O3-xN film, an additional annealing at 450°C was implemented. In this study, the electrical characteristics and reliability of this integrated Cu/Mn2O3-xN/p-SiOCH(N)/Si structure is investigated. The proposed Cu/Mn2O3-xN/p-SiOCH(N)/Si capacitors exhibited poor dielectric breakdown characteristics in the as-fabricted stage, although, less degradation was found after thermal stress. Moreover, its time-dependence-dielectric-breakdown electric-field acceleration factor slightly increased after thermal stress, leading to a larger dielectric lifetime in a low electric-field as compared to other MIS capacitors. Furthermore, its Cu barrier ability under electrical or thermal stress was improved. As a consequent, the proposed Cu/Mn2O3-xN/p-SiCOH(N) scheme is a promising integrity for back-end-of-line interconnects.

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