Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

SI Contacts Formed from Spun-on Metallo-Organic Solutions

1983 ◽  
Vol 25 ◽  
Author(s):  
C. S. Pai ◽  
B. Zhang ◽  
D. M. Scott ◽  
S. S. Lau ◽  
M. Bartur ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Annealing Temperature ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Linear Region ◽  
X Ray ◽  
Si Substrates ◽  
Organic Solutions ◽  
Pt Films

ABSTRACTThe use of spun-on liquids to form ohmic and Schottky barrier contacts on Si has been investigated. Two commercially available metallo-organic solutions containing Au or Pt were applied to Si substrates by spinning techniques. The Au or Pt contacts were then formed by annealing at 250°C or 450°C respectively. The metallurgical interactions between the spun-on Au or Pt layers and the Si substrate were investigated by MeV backscattering spectrometry and X-ray diffraction as a function of the annealing temperature. The resulting electrical characteristics were investigated with four point probe, I-V and C-V techniques. It was found that the spun-on Au or Pt films react with Si substrates at much higher temperatures than those deposited by vacuum evaporation. The diode characteristics of the spun-on Au films are comparable to those of evaporated Au films ( φB ∼0.85V, n ∼1.08), whereas diode characteristics of spunon Pt films show no linear region on the ln I-V curve. The application of spun-on Au also improves the bondability of Si chips on Mo headers.

The Microstructure and Electrical Property of Porous Cu Film on Soft PVDF Substrate

2012 ◽  
Vol 472-475 ◽  
pp. 1451-1454
Author(s):  
Xue Hui Wang ◽  
Wu Tang ◽  
Ji Jun Yang
Keyword(s):  
Electrical Properties ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Cu Films ◽  
Cu Film ◽  
Diffraction Peaks ◽  
Sputtering Pressure ◽  
Effect Method

The porous Cu film was deposited on soft PVDF substrate by magnetron sputtering at different sputtering pressure. The microstructure and electrical properties of Cu films were investigated as a function of sputtering pressure by X-ray diffraction XRD and Hall effect method. The results show that the surface morphology of Cu film is porous, and the XRD revealed that there are Cu diffraction peaks with highly textured having a Cu-(220) or a mixture of Cu-(111) and Cu-(220) at sputtering pressure 0.5 Pa. The electrical properties are also severely influenced by sputtering pressure, the resistivity of the porous Cu film is much larger than that fabricated on Si substrate. Furthermore, the resistivity increases simultaneously with the increasing of Cu film surface aperture, but the resistivity of Cu film still decreases with the increasing grain size. It can be concluded that the crystal structure is still the most important factor for the porous Cu film resistivity.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Mo/Cr Metallization for Silicon Device Interconnection

1986 ◽  
Vol 71 ◽  
Author(s):  
M. J. Kim ◽  
R. A. Saia
Keyword(s):  
Annealing Temperature ◽  
Vlsi Circuits ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Thermal Reliability ◽  
X Ray ◽  
Layer Contact ◽  
Silicon Device ◽  
Dry Etch

AbstractA molybdenum and chromium double layer contact has been developed for the first level metallization of VLSI circuits. An 800Å layer of chromium deposited under a thick molybdenum conductor provides good ohmic contact to p+ and n+ silicon and also promotes metal adhesion to the substrate. The molybdenum has good step coverage and acceptable current carrying capacity when its thickness exceeds 5000Å. Both metals are sequentially sputtered in one pumpdown and patterned with a single RIE step using CCI4 + O2. One pm diameter contacts and 1.5µm wide lines are formed in VLSI geometries using all dry etch processes. Electrical characteristics and thermal reliability were evaluated as a function of annealing temperature. Contact resistance and shallow device junctions are stable up to 500°C for p+/n diodes and up to 450°C for n+/p diodes. The sheet resistance of the film in contact with silicon rapidly increases at 525°C as silicon outdiffuses to form (Mox Crr−x)Si2 The mechanism and cause of the high temperature degradation was studied by mean of SIMS, x-ray diffraction analysis, SEM and electrical measurements.

Metallurgical and Electrical Characteristics of MoAlx Schottky Contacts to n-GaAs

1992 ◽  
Vol 260 ◽  
Author(s):  
T. S. Huang ◽  
J. G. Peng ◽  
C. C. Lin
Keyword(s):  
Thermal Processing ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Interfacial Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Current Voltage

ABSTRACTThe interfacial stability, surface morphology and electrical characteristics of MoAlx contacts to n-GaAs have been investigated by using x-ray diffraction, scanning electron microscopy, sheet resistance and current-voltage measurements. The compositions of rf-cosputtered MoAlx films were x = 0.35, 2.7, and 7.0, respectively. The contacts were annealed by rapid thermal processing in the temperature range 500–1000 °C for 20 s. The interfaces of MoAl0.35/GaAs and MoAl2,7/GaAs were stable up to 900 °C, while the interfaces of MoAl7.0/GaAs were less stable and reactions occurred above 800 °C. The variations of sheet resistances and the barrier heights of the Schottky diodes as a function of annealing temperatures can be well correlated to the interfacial stability. The MoAl2.7/n-GaAs diodes exhibited the best stability and were characterized by the highest barrier height (0.98 V) and nearly unit ideality factor (1.11) after annealing at 900 °C. For all thermally stable MoAlx/n-GaAs Schottky diodes, the barrier heights increased with annealing temperature.

Laser Recrystallization of InP Films on Oxidized Si Substrate

1985 ◽  
Vol 53 ◽  
Author(s):  
Li Xiqiang ◽  
Zhu Weiwen ◽  
Lin Chenglu ◽  
Wang Weiyuan ◽  
Tsou Shihchang
Keyword(s):  
Grain Size ◽  
Laser Power ◽  
Beam Diameter ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Laser Recrystallization ◽  
Before And After

ABSTRACTThe InP films with thickness of 1-2 µm and resistivity of 10-10−3Ω-cm were sputtered on oxidized Si substrates heated at about 300°C to form as InP SOI. Using X-ray diffraction, ED, TEM, Hall and RBS, we have investigated the grain size, compositions, thermal stability and electrical characteristics of InP SOI before and after CW Ar+ laser recrystallization. The sputtered InP SOI films appear as polycrystalline and its grain size increases with increasing of irradiated laser power from 5.8 to 7.0 W at a beam diameter of 70 µm. After irradiation at 7 W the single crystal ED patterns are obtained, the mobility and carrier concentrations amount to 103cm2/Vs and 1017cm−3, respectively, and the compositions are stoichiometric.

STRUCTURE AND MAGNETIC PROPERTIES IN Mn-DOPED Si

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3469-3472 ◽  
Author(s):  
Z. Y. ZHAI ◽  
X. S. WU ◽  
W. ZHANG ◽  
B. QIAN ◽  
Y. M. ZHANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Magnetic Circular Dichroism ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Post Annealing ◽  
Two Phases ◽  
Mn Doped ◽  
Post Annealing Temperature

The composition of Mn 0.05 Si 0.95 polycrystalline films on (001) Si substrate are prepared by vacuum deposition and post-crystallization processes. X-ray diffraction studies indicate that there are two phases coexist in the film: tetragonal, Mn 4 Si 7 and diamond-like Si (Mn) . The content of Si(Mn) phase increases with increasing the post-annealing temperature. Temperature dependence of the magnetization shows that there are two ferromagnetic phases with Curie temperature of around 50 K and near room temperature, which is confirmed by x-ray magnetic circular dichroism (XMCD).

Microstructural and Electrical Properties of ZnO Ceramics with ZnO-Na2O-P2O5 Glass Oxide Additions

2014 ◽  
Vol 912-914 ◽  
pp. 231-234
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Chang Yi Peng ◽  
Ming Lang Hung ◽  
Ching Fang Tseng ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Electronic Device ◽  
Oxide Ceramics ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
Suitable Candidate ◽  
X Ray ◽  
Device Applications ◽  
Zno Ceramics

The compositions, electrical properties and microstructures of zinc oxide ceramics with various 46.6ZnO-20Na2O-33.4P2O5glass oxide additions prepared by solid-state method have been investigated. The structure of the materials is studied using X-Ray diffraction, and the microstructure is analyzed using scanning electron microscopy. The results indicated that the electrical properties were associated with the amount of 46.6ZnO-20Na2O-33.4P2O5glass oxide additions and the sintering temperatures. The correlation between the microstructures, oxide additions and the sintering temperature was also discussed. From the results of electrical properties measurements, zinc oxide ceramics with various 46.6ZnO-20Na2O-33.4P2O5glass oxide additions exhibits a good electrical behavior, which can be a suitable candidate material for electronic device applications.

Electrical Characteristics of BaxSr1-xTiO3(BST) Capacitors Implemented with Ti-Al Electrodes

2006 ◽  
Vol 928 ◽  
Author(s):  
Thottam S Kalkur ◽  
Jeff Whitescarver ◽  
Nick Cramer
Keyword(s):  
Dielectric Constant ◽  
Substrate Temperature ◽  
Diffraction Analysis ◽  
Annealing Temperature ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Decoupling Capacitor ◽  
Electrical Characterizations ◽  
Deposited Film

AbstractTi-Al was used as the electrode for RF magnetron sputtered BST film at a substrate temperature of 450°C for decoupling capacitor applications. X-ray diffraction analysis shows that the deposited film BST film is amorphous. Electrical characterizations of the devices performed by capacitance versus voltage measurements show a dielectric constant of about 55. With increase in annealing temperature above 450°C, the capacitance was found to decrease significantly.

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode

2008 ◽  
Vol 600-603 ◽  
pp. 643-646 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Takashi Nishi ◽  
Takasumi Ohyanagi ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Voltage Drop ◽  
Schottky Contact ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Forward Voltage Drop

The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated. The Schottky barrier height (fb) and the crystal structure of the samples annealed at the different temperature were measured by the forward current-voltage (IV) characteristics and the x-ray diffraction (XRD), respectively. XRD measurements were performed in the w-2q scan and the pole figure measurement for Ti (101) diffraction peak. The fb was changed as a function of temperature. It was concluded that the fb variation and non-uniformity of the samples annealed at 400oC, 500oC, 600 oC and 700oC was caused by changing the condition at the interface between SiC substrate and Ti. We fabricated the 600V Ti/SiC silicidation SBD annealed at 500oC for 5min. As a result, a low forward voltage drop, low reverse leakage current and stability at high temperature (200 oC) for the Ti/SiC silicidation SBD were shown.

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