scholarly journals Anisotropy of spin-resonance position in p-type InSb inversion layer

1990 ◽  
Vol 76 (6) ◽  
pp. 839-842 ◽  
Author(s):  
Yang-Fang Chen
Keyword(s):  
Inversion Layer ◽  
Resonance Position ◽  
Spin Resonance ◽  
P Type

Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

2010 ◽  
Vol 25 (5) ◽  
pp. 055009 ◽  
Author(s):  
F E Rougieux ◽  
D Macdonald ◽  
K R McIntosh ◽  
A Cuevas
Keyword(s):  
Crystalline Silicon ◽  
Inversion Layer ◽  
P Type

scholarly journals Mn charge states in GaMnN as a function of Mn concentration and co-doping

2007 ◽  
Vol 1040 ◽  
Author(s):  
Enno Malguth ◽  
Axel Hoffmann ◽  
Wolfgang Gehlhoff ◽  
Matthew H. Kane ◽  
Ian T. Ferguson
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Magnetic Semiconductor ◽  
Electron Spin Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Mg Doping ◽  
Co Doping ◽  
Spin Resonance ◽  
P Type ◽  
Mn Concentration

AbstractIn the context of the pursuit of a dilute magnetic semiconductor for spintronic applications, a set of GaMnN samples with varying Mn concentration and Si or Mg co-doping was investigated by optical and electron spin resonance spectroscopy. The results clearly demonstrate how the charge state of Mn is changed between 2+, 3+ and 4+ by Mg and Si co-doping. For p-type GaMnN we show that the introduction of the Mn3+/4+ donor can be compensated by Mg co-doping lowering the Fermi energy below the Mn3+/4+ level. While our results are in agreement with the hypothesis that the infrared photoluminescence appearing in GaMnN upon Mg doping originates from Mn4+, an unambiguous proof is still to be presented. Under this assumption, our measurements show that the Mn4+ center must be excited via an extra-center process at 2.54 eV.

Spin resonance of electrons on donors in p-type silicon

1960 ◽  
Vol 17 (1-2) ◽  
pp. 173-175 ◽  
Author(s):  
G. Bemski ◽  
B. Szymanski
Keyword(s):  
Type Silicon ◽  
Spin Resonance ◽  
P Type

scholarly journals Модель термополевой нестабильности p-МОП-транзисторов при отрицательном смещении затвора

2020 ◽  
Vol 54 (2) ◽  
pp. 181
Author(s):  
О.В. Александров
Keyword(s):  
Silicon Substrate ◽  
Gate Dielectric ◽  
Inversion Layer ◽  
Surface States ◽  
Quantitative Model ◽  
Oxide Semiconductor ◽  
Mos Transistors ◽  
Ion Diffusion ◽  
Bias Temperature Instability ◽  
P Type

Abstract A new quantitative model of the negative-bias temperature instability (NBTI) of p -MOS (metal-oxide-semiconductor) transistors is developed. The model is based on the reaction of the depassivation of surface states at the Si–SiO_2 interphase boundary (IPB) and hydrogen-containing hole traps near the Si–SiO_2 IPB by positively charged hydrogen ions H^+, accumulated in the p ^+-type inversion layer of the silicon substrate. The dependences of the surface and space charges in p -MOS transistors on the NBTI time are controlled by the kinetics of H^+-ion diffusion and drift from the silicon substrate to the Si–SiO_2 IPB. The effect of the gate voltage on the NBTI is explained by the effect of the electric-field strength on the H^+ ion segregation coefficient at the Si–SiO_2 IPB. The relaxation of positive space charge introduced into the gate dielectric during NBTI is described by the tunnel discharge of oxide traps by silicon-substrate electrons.

Surface charge transfer doping induced inversion layer for high-performance graphene/silicon heterojunction solar cells

2017 ◽  
Vol 5 (1) ◽  
pp. 285-291 ◽  
Author(s):  
Ke Ding ◽  
Xiujuan Zhang ◽  
Feifei Xia ◽  
Rongbin Wang ◽  
Yawei Kuang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
Surface Charge ◽  
High Performance ◽  
Inversion Layer ◽  
Heterojunction Solar Cells ◽  
Device Efficiency ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

Surface charge transfer doping (SCTD) induced p-type inversion layer was implemented in the graphene/silicon heterojunction solar cells, leading to significant improvement of device efficiency.

Spin Resonance Investigations of GaN and AlGaN

1996 ◽  
Vol 449 ◽  
Author(s):  
N. M. Reinacher ◽  
H. Angerer ◽  
O. Ambacher ◽  
M. S. Brandt ◽  
M. Stutzmann
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ternary Alloys ◽  
Direct Measure ◽  
Temperature Dependent ◽  
Excitation Energies ◽  
Resonance Position ◽  
Grown Layer ◽  
Spin Resonance ◽  
Energetic Level

ABSTRACTElectron Spin Resonance (ESR) and related methods have been used to study defects in GaN and in AlxGa1-xN ternary alloys. In particular, Light-induced ESR of a thick MOCVD grown layer of GaN shows that the ESR signature of the deep defect appears for excitation energies > 2.6 eV and saturates above 2.7 eV. This information provides a direct measure of the energetic level position of the diamagnetic to paramagnetic transition of this center. Furthermore, standard ESR investigations of MBE-grown layers of AlxGa1-xN alloys were performed with emphasis on the effective-mass donor resonance. Composition and temperature-dependent measurements of the resonance position are presented.

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