Abstract A new quantitative model of the negative-bias temperature instability (NBTI) of p -MOS (metal-oxide-semiconductor) transistors is developed. The model is based on the reaction of the depassivation of surface states at the Si–SiO_2 interphase boundary (IPB) and hydrogen-containing hole traps near the Si–SiO_2 IPB by positively charged hydrogen ions H^+, accumulated in the p ^+-type inversion layer of the silicon substrate. The dependences of the surface and space charges in p -MOS transistors on the NBTI time are controlled by the kinetics of H^+-ion diffusion and drift from the silicon substrate to the Si–SiO_2 IPB. The effect of the gate voltage on the NBTI is explained by the effect of the electric-field strength on the H^+ ion segregation coefficient at the Si–SiO_2 IPB. The relaxation of positive space charge introduced into the gate dielectric during NBTI is described by the tunnel discharge of oxide traps by silicon-substrate electrons.
Surface charge transfer doping (SCTD) induced p-type inversion layer was implemented in the graphene/silicon heterojunction solar cells, leading to significant improvement of device efficiency.
ABSTRACTIn-situ UV-visible ellipsometry and Kelvin probe measurements were performed to study the growth of boron-doped microcrystalline silicon (μc-Si:H) thin films and the band profiling at the p- (μc-Si:H)/i-(a-Si:H) interface. The in-situ UV-visible spectroscopic ellipsometry measurements, combined with dark conductivity measurements, performed at different stages of the growth show that p-type μc-Si:H formation can be achieved for a film thickness below 10 nm. These analyses also reveal that both the optical absorption, and the dark conductivity do not change significantly for a crystalline volume fraction above 50%. Moreover, the contact potential as measured by in- situ Kelvin probe shows a saturation just after the percolation threshold. These results indicate that highly crystallized doped layers are not necessary in device applications. From the Kelvin probe measurements, the potential profile through the p-(μc-Si:H)/ i-(a-Si:H) interface was measured. The microcrystalline silicon p-layers were successfully incorporated in single junction solar cells.
ABSTRACTIn this paper, we investigate the effective inversion layer mobility of lateral 4H-SiC MOSFETs. Initially, lateral n-channel MOSFETs were fabricated to determine the effect of p-type epi-regrowth on a highly doped p-well surface. The negative effects of the high p-well doping are still seen with 1500 Å p-type regrowth, while growing 0.5 um or more appears to be sufficient to grow out of the damaged area. A second experiment was performed to examine the effects of doping during epitaxial regrowth versus using ion implantation after regrowth. Comparable mobilities and threshold voltages were observed for equivalent epitaxial and implanted doping concentrations.
Anisotropy of spin-resonance position in p-type InSb inversion layer