Improvement of the crystallinity of a GaAs epitaxial film grown on a Si substrate using a Si/SiGe/Ge buffer layer

1996 ◽  
Vol 279 (1-2) ◽  
pp. 166-168 ◽  
Author(s):  
Y.D. Woo ◽  
T.W. Kang ◽  
T.W. Kim
Keyword(s):  
Buffer Layer ◽  
Epitaxial Film ◽  
Si Substrate

Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate

2014 ◽  
Vol 35 (6) ◽  
pp. 727-731
Author(s):  
陈翔 CHEN Xiang ◽  
邢艳辉 XING Yan-hui ◽  
韩军 HAN Jun ◽  
霍文娟 HUO Wen-juan ◽  
钟林健 ZHONG Lin-jian ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Epitaxial Film ◽  
Si Substrate ◽  
Aln Buffer

Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate

2003 ◽  
Vol 240 (2) ◽  
pp. 429-432 ◽  
Author(s):  
T. Yamaguchi ◽  
Y. Saito ◽  
C. Morioka ◽  
K. Yorozu ◽  
T. Araki ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Epitaxial Film ◽  
Si Substrate ◽  
Aln Buffer

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

2005 ◽  
Vol 20 (3) ◽  
pp. 726-733 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Hyoun-Ee Kim
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Nickel Nitrate ◽  
Si Substrate ◽  
Pzt Thin Film ◽  
Pzt Films ◽  
Lanthanum Nickel ◽  
Ferroelectric And Piezoelectric Properties

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness

2014 ◽  
Vol 104 (24) ◽  
pp. 241605 ◽  
Author(s):  
Po-Hung Wu ◽  
Ying-Sheng Huang ◽  
Hung-Pin Hsu ◽  
Cheng Li ◽  
Shi-Hao Huang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Si Substrate ◽  
Temperature Dependent ◽  
Dependent Strain ◽  
Different Thickness

Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer

2011 ◽  
Vol 9 (3-4) ◽  
pp. 550-553 ◽  
Author(s):  
H. Fang ◽  
Y. Takaya ◽  
S. Ohuchi ◽  
H. Miyake ◽  
K. Hiramatsu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Si Substrate ◽  
Strain Control ◽  
Algan Buffer

Microstructure and Electrical Properties of R.F. Magnetron Sputtering Derived PZT Thin Films Deposited on PbO Buffer Layer

2005 ◽  
Vol 486-487 ◽  
pp. 626-629 ◽  
Author(s):  
Chul Ho Park ◽  
Young Gook Son
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Memory Window ◽  
Processing Temperature ◽  
Si Substrate ◽  
Pzt Thin Films ◽  
Maximum Value ◽  
Pzt Thin Film ◽  
Mfis Structure

The MFS and MFIS structures were prepared on the Si and PbO/Si substrate by the r.f. magnetron sputtering method. When the PbO buffer layer was inserted between the PZT thin film and Si substrate, the crystallization of the PZT thin films was considerably improved, and the processing temperature was lowered. Compared with the MFS structure, memory window values of the MFIS structure with the buffer layer were considerably improved. In particular, in the MFIS structure, the maximum value of the memory window is 2.0 V under the applied voltage of 9V for Pt/PZT (200 nm, 400ı)/PbO (80 nm)/Si structures with the PbO buffer layer deposited at the substrate temperature of 300ı.

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