Low Temperature Oxide and Nitride Film Depositions by Simultaneous Use of Ionized Cluster Beam Source and Microwave Ion Source

1987 ◽  
Vol 101 ◽  
Author(s):  
Toshinori Takagi ◽  
Gikan H. Takaoka ◽  
Junzo Ishikawa
Keyword(s):  
Substrate Temperature ◽  
Ion Source ◽  
Nitride Film ◽  
Silicon Substrates ◽  
Cluster Beam ◽  
Beam Source ◽  
Microwave Ion Source ◽  
Temperature Oxide ◽  
Simultaneous Use ◽  
Reactive Gas

ABSTRACTAluminum oxide (A12O3), nitride(A1N) and silicon nitride(SiN) films were prepared at a low substrate temperature of 100°C. Film resistivity was higher than 5x1013 Ω-cm and the breakdown voltage was greater than 3x10° V/cm. The films deposited on sapphire and silicon substrates were very flat, and were chemically and thermally stable. The A1-O, A1-N and Si-N bonds could be formed effectively by using both ionized clusters and reactive gas ions, and transparent and good quality films were obtained. Through these results, the simultaneous use of an ionized cluster beam (ICB) system and a microwave ion source was found to have a high potential for preparing oxide and nitride films at a low substrate temperature.

Silicon Oxide Film Formation by the Simultaneous use of a Microwave Ion Source and an Icb System

1989 ◽  
Vol 157 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Hiroshi Tsuji ◽  
Junzo Ishikawa
Keyword(s):  
Oxide Film ◽  
Substrate Temperature ◽  
Ionization Energy ◽  
Incident Energy ◽  
Silicon Oxide ◽  
Film Formation ◽  
Ion Source ◽  
Silicon Oxide Film ◽  
Microwave Ion Source ◽  
Simultaneous Use

ABSTRACTSiO2 films were prepared at a substrate temperature of 100°C by the simultaneous use of a microwave ion source and an ICB system. Transparent and good insulating SiO2 films could be obtained by using 02 gas ions, and they were thermally and chemically stable. Furthermore, both the ionization energy and the incident energy of the 02 gas ions were found to enhance the chemical reaction between SiO and 02 molecules, resulting in the Si02 film formation at a low substrate temperature.

Characteristics of Palladium Thin Films Deposited by the Ionized Cluster Beam Technique

1991 ◽  
Vol 239 ◽  
Author(s):  
Maria Huffman ◽  
T. S. Kalkur ◽  
L. Kammerdiner ◽  
R. Kwor ◽  
L. L. Levenson ◽  
...  
Keyword(s):  
Grain Size ◽  
Substrate Temperature ◽  
Substrate Surface ◽  
Silicon Substrates ◽  
Cluster Beam ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Neutral Mode ◽  
Almost All ◽  
Substrate Temperatures

ABSTRACTAn ionized cluster beam (ICB) source was used to deposit Pd onto oxidized silicon substrates. The ICB source was operated in both the neutral mode (no ionization and no acceleration) and in the ICB mode with ionization and acceleration voltages at 3 kV and 6 k.V. Also, substrate temperatures were varied between 100°C and 400°C. The Pd film thicknesses were generally between 1, 200Å and 1, 800Å, with one film thickness about 500Å. The films were examined by transmission electron microscopy (TEM), transmission electron diffraction (TED), and x-ray diffraction (XRD). Grain size measurements by TEM and XRD showed that ionization and acceleration of Pd resulted in a slight increase in grain size compared to films deposited without ionization or acceleration at any substrate temperature. However, the grain size increased significantly as the substrate temperature rose. XRD showed that all ICB deposited Pd films have significant (111) texturing as determined by comparison to XRD data for Pd powder. For Pd films deposited at 400°C, almost all grains were oriented with the (111) planes parallel to the substrate surface. The electrical conductivity of all Pd films was comparable to that of bulk Pd.

25. Cryopumped hydrogen cluster beam source

Vacuum ◽  
1978 ◽  
Vol 28 (10-11) ◽  
pp. 485 ◽  
Author(s):  
Wolfgang Obert
Keyword(s):  
Cluster Beam ◽  
Beam Source

Development of microwave ion source for industrial applications

2014 ◽  
Vol 85 (2) ◽  
pp. 02C306 ◽  
Author(s):  
N. Takahashi ◽  
H. Murata ◽  
H. Mitsubori ◽  
J. Sakuraba ◽  
T. Soga ◽  
...  
Keyword(s):  
Industrial Applications ◽  
Ion Source ◽  
Microwave Ion Source

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Sign in / Sign up

Export Citation Format

Share Document